Patent Assignment
Reel/Frame 024202/0494
SECURITY AGREEMENT
Recorded: 2010-04-08
Received: 2010-04-08
Pages: 14
Assignor
AXCELIS TECHNOLOGIES, INC.
Executed: 2010-03-12
Assignee
SILICON VALLEY BANK
3003 TASMAN DRIVE, SANTA CLARA, CA, 95054, UNITED STATES
Covered Applications
(62)
METHOD FOR IMPROVING IMPLANT UNIFORMITY DURING PHOTORESIST OUTGASSING
App. No. 12/717,536
→
THERMAL ISOLATION ASSEMBLIES FOR WAFER TRANSPORT APPARATUS AND METHODS OF USE THEREOF
App. No. 12/694,597
→
SULFONAMIDE DERIVATIVES
App. No. 12/685,913
→
Substantially Non-Oxidizing Plasma Treatment Devices and Processes
App. No. 12/631,117
→
TUNING HARDWARE FOR PLASMA ASHING APPARATUS AND METHODS OF USE THEREOF
App. No. 12/621,136
→
METHOD AND APPARATUS FOR CLEANING RESIDUE FROM AN ION SOURCE COMPONENT
App. No. 12/616,662
→
METHOD AND SYSTEM FOR INCREASING BEAM CURRENT ABOVE A MAXIMUM ENERGY FOR A CHARGE STATE
App. No. 12/609,912
→
METHOD OF DOPING SEMICONDUCTORS
App. No. 12/511,737
→
Use of Beam Scanning to Improve Uniformity and Productivity of a 2D Mechanical Scan Implantation System
App. No. 61/222,671
→
SYSTEM AND METHOD FOR EVALUATING VEHICLE PURCHASE LOYALTY
App. No. 61/222,017
→
LOW-INERTIA MULTI-AXIS MULTI-DIRECTIONAL MECHANICALLY SCANNED ION IMPLANTATION SYSTEM
App. No. 12/487,229
→
SYSTEM AND METHOD FOR ION IMPLANTATION WITH IMPROVED PRODUCTIVITY AND UNIFORMITY
App. No. 61/185,109
→
POST-DECEL MAGNETIC ENERGY FILTER FOR ION IMPLANTATION SYSTEMS
App. No. 12/477,631
→
CONTROL OF PARTICLES ON SEMICONDUCTOR WAFERS WHEN IMPLANTING BORON HYDRIDES
App. No. 12/474,786
→
SYSTEM AND METHOD OF PERFORMING UNIFORM DOSE IMPLANTATION UNDER ADVERSE CONDITIONS
App. No. 12/431,081
→
ION SOURCE WITH ADJUSTABLE APERTURE
App. No. 12/423,066
→
NON-CONDENSING THERMOS CHUCK
App. No. 12/358,788
→
ION BEAM ANGLE CALIBRATION AND EMITTANCE MEASUREMENT SYSTEM FOR RIBBON BEAMS
App. No. 12/357,688
→
ENHANCED LOW ENERGY ION BEAM TRANSPORT IN ION IMPLANTATION
App. No. 12/357,973
→
ELECTROSTATIC CHUCK SHIELDING MECHANISM
App. No. 12/340,936
→
ION IMPLANTATION WITH DIMINISHED SCANNING FIELD EFFECTS
App. No. 12/338,644
→
DE-CLAMPING WAFERS FROM AN ELECTROSTATIC CHUCK
App. No. 12/331,619
→
ELECTROSTATIC CHUCK WITH COMPLIANT COAT
App. No. 12/331,813
→
FRONT END OF LINE PLASMA MEDIATED ASHING PROCESSES AND APPARATUS
App. No. 12/275,394
→
WAFER GROUNDING METHOD FOR ELECTROSTATIC CLAMPS
App. No. 12/262,399
→
ELECTROSTATIC CHUCK GROUND PUNCH
App. No. 12/262,990
→
HYBRID SCANNING FOR ION IMPLANTATION
App. No. 12/245,866
→
EXTRACTION ELECTRODE MANIPULATOR
App. No. 12/238,265
→
ADJUSTABLE DEFLECTION OPTICS FOR ION IMPLANTATION
App. No. 12/212,507
→
SYSTEM AND METHOD OF BEAM ENERGY IDENTIFICATION FOR SINGLE WAFER ION IMPLANTATION
App. No. 12/190,736
→
DOUBLE PLASMA ION SOURCE
App. No. 12/183,961
→
ELEVATED TEMPERATURE RF ION SOURCE
App. No. 12/183,787
→
HYBRID ION SOURCE/MULTIMODE ION SOURCE
App. No. 12/184,082
→
WORKPIECE GRIPPING INTEGRITY SENSOR
App. No. 12/178,014
→
METHOD AND APPARATUS FOR MEASUREMENT OF BEAM ANGLE IN ION IMPLANTATION
App. No. 12/176,748
→
SYSTEM AND METHOD FOR REDUCING PARTICLES AND CONTAMINATION BY MATCHING BEAM COMPLEMENTARY APERTURE SHAPES TO BEAM SHAPES
App. No. 12/146,122
→
LOW-INERTIA MULTI-AXIS MULTI-DIRECTIONAL MECHANICALLY SCANNED ION IMPLANTATION SYSTEM
App. No. 61/075,614
→
SYSTEM AND METHOD OF CONTROLLING BROAD BEAM UNIFORMITY
App. No. 12/145,713
→
POST-DECEL MAGNETIC ENERGY FILTER FOR ION IMPLANTATION SYSTEMS
App. No. 61/075,657
→
METHODS FOR IMPLANTING B22HX AND ITS IONIZED LOWER MASS BYPRODUCTS
App. No. 12/142,081
→
CONTROL OF PARTICLES ON SEMICONDUCTOR WAFERS WHEN IMPLANTING BORON HYDRIDES
App. No. 61/057,485
→
SYSTEM AND METHOD OF PERFORMING UNIFORM DOSE IMPLANTATION UNDER ADVERSE CONDITIONS
App. No. 61/049,717
→
GAS BEARING ELECTROSTATIC CHUCK
App. No. 12/113,091
→
LOW CONTAMINATION, LOW ENERGY BEAMLINE ARCHITECTURE FOR HIGH CURRENT ION IMPLANTATION
App. No. 12/108,890
→
ION SOURCE WITH ADJUSTABLE APERTURE
App. No. 61/047,528
→
EXTRACTION ELECTRODE SYSTEM FOR HIGH CURRENT ION IMPLANTER
App. No. 12/050,594
→
PLASMA MEDIATED ASHING PROCESSES THAT INCLUDE A PASSIVATION STEP BEFORE AND/OR DURING PLASMA PROCESSING
App. No. 61/033,969
→
DOUBLE PLASMA ION SOURCE
App. No. 60/981,576
→
WORKPIECE GRIPPING INTEGRITY SENSOR
App. No. 60/954,949
→
ELEVATED TEMPERATURE RF ION SOURCE
App. No. 60/952,895
→
HYBRID ION SOURCE/MULTIMODE ION SOURCE
App. No. 60/952,916
→
PLASMA ASHING PROCESS
App. No. 90/007,367
→
METHOD FOR FABRICATING A JOHNSEN-RAHBEK ELECTROSTATIC WAFER CLAMP
App. No. 10/880,895
→
WAFER TRANSPORT APPARATUS
App. No. 10/663,519
→
METHOD AND SYSTEM FOR ION BEAM CONTAINMENT IN AN ION BEAM GUIDE
App. No. 10/444,413
→
APPARATUS FOR INCREASED WORKPIECE THROUGHPUT
App. No. 10/167,937
→
WAFER PEDESTAL TILT MECHANISM
App. No. 10/023,516
→
WAFER PEDESTAL TILT MECHANISM AND COOLING SYSTEM
App. No. 10/054,325
→
SYSTEM AND METHOD FOR RAPIDLY CONTROLLING THE OUTPUT OF AN ION SOURCE FOR ION IMPLANTATION
App. No. 10/032,664
→
CHARGE MEASURING DEVICE WITH WIDE DYNAMIC RANGE
App. No. 09/975,685
→
APPARATUS FOR MAGNETICALLY SCANNING AND/OR SWITCHING A CHARGED-PARTICLE BEAM
App. No. 09/949,072
→
ION IMPLANTATION UNIFORMITY CORRECTION USING BEAM CURRENT CONTROL
App. No. 09/887,808
→