Tuning hardware for plasma ashing apparatus and methods of use thereof
A continuously variable microwave circuit capable of being tuned to operate under a plurality of distinct operating conditions, comprising: a waveguide comprising an adjustable tuning element having a core configured to protrude into the waveguide; an actuator in operative communication with the adjustable tuning element, wherein the actuator is operable to selectively vary a length of the core that is protruding into the waveguide so as to minimize reflected microwave power in the plasma asher; and a controller in operative communication with the actuator, wherein the controller is configured to selectively activate the actuator upon a change in the plurality of operating conditions.
1. A variable microwave circuit capable of being tuned to operate under a plurality of operating conditions in a plasma ashing apparatus, comprising:
a waveguide comprising an adjustable tuning element having a core configured to protrude into the waveguide,
wherein the adjustable tuning element comprises a plurality of bearings arranged between the core and the waveguide, and wherein a portion of the core external to the waveguide is grounded, via electrical contact with the plurality of bearings such that microwave leakage between the waveguide and the core is grounded;
an actuator to selectively vary a length of the core of the adjustable tuning element that is protruding into the waveguide; and
a controller configured to selectively adjust the actuator upon a change in the plurality of operating conditions in the plasma ashing apparatus.
2. The microwave circuit of claim 1 , wherein the actuator is pneumatic or electrical.
3. The microwave circuit of claim 1 , wherein the plurality of operating conditions comprises discrete gas compositions, different gas pressures, different microwave power inputs, or a combination comprising at least one of the foregoing.
4. The microwave circuit of claim 3 , wherein the discrete gas compositions comprise nitrogen containing gases, fluorine bearing gases, reducing gases, oxidizing gases, inert gases, or a combination comprising at least one of the foregoing.
5. The microwave circuit of claim 1 , further comprising a vertical positioning system for selectively varying a position of the adjustable tuning element along a length of the waveguide.
6. The microwave circuit of claim 5 , wherein the vertical positioning system comprises:
a vertical actuator to selectively position the adjustable tuning element along the length of the waveguide; and
a controller configured to selectively activate the vertical actuator upon a change in the plurality of operating conditions.
7. A plasma ashing apparatus including the microwave circuit of claim 1 .
8. The variable microwave circuit of claim 1 , wherein the circuit is disposed within a microwave downstream plasma ashing apparatus.
9. A tunable plasma ashing apparatus for stripping photoresist, polymers, and/or residues from a substrate, comprising:
a plasma generating component configured to generate plasma and comprising a microwave power source;
a variable microwave circuit capable of being tuned to operate under a plurality of operating conditions, wherein the variable microwave circuit comprises:
a waveguide in operative communication with the microwave power source configured to transmit microwave energy therethrough;
an adjustable tuning element comprising a core configured to protrude into the waveguide,
wherein the core comprises a plurality of bearings arranged between the core and the waveguide,
wherein the bearings comprise metal or metal alloy, and
wherein the plurality of bearings are disposed outside of the waveguide;
an actuator to selectively vary a length of the core of the adjustable tuning element that is protruding into the waveguide;
a controller configured to selectively adjust the actuator upon a change in the plurality of operating conditions; and
a process chamber for housing the substrate in fluid communication with the plasma generating component.
10. The tunable plasma ashing apparatus of claim 9 , wherein a selected one or both of the plurality of bearings and the core comprise beryllium copper.
11. The tunable plasma ashing apparatus of claim 9 , wherein the actuator is pneumatic or electrical.
12. The tunable plasma ashing apparatus of claim 9 , wherein the plurality of operating conditions comprises different total gas flows, discrete gas compositions, different gas pressures, different microwave power inputs, or a combination comprising at least one of the foregoing.
13. The tunable plasma ashing apparatus of claim 12 , wherein the discrete gas compositions comprise nitrogen containing gases, fluorine bearing gases, reducing gases, oxidizing gases, inert gases, or a combination comprising at least one of the foregoing.
14. The tunable plasma ashing apparatus of claim 9 , further comprising a vertical positioning system configured to selectively vary a position of the adjustable tuning element along a length of the waveguide.
15. The tunable plasma ashing apparatus of claim 14 , wherein the vertical positioning system comprises:
a vertical actuator to selectively position the adjustable tuning element along the length of the waveguide; and
a controller configured to selectively activate the vertical actuator upon a change in the plurality of operating conditions.