Adjustable louvered plasma electron flood enclosure

1. An apparatus for reducing particle contamination in an ion implantation system, the apparatus comprising an enclosure configured to reside along a beamline of the ion implantation system, wherein the enclosure has an entrance, an exit, and at least one louvered side having a plurality of louvers defined therein, wherein the beamline passes through the entrance and exit, and wherein the plurality of louvers of the at least one louvered side are configured to mechanically filter an edge of an ion beam traveling along the beamline.

2. The apparatus of claim 1 , wherein the enclosure comprises two louvered sides positioned generally opposite one another.

3. The apparatus of claim 2 , wherein respective widths of the entrance and exit of the enclosure, when measured perpendicular to the beamline, are generally defined by a position of the two louvered sides with respect to one another.

4. The apparatus of claim 3 , wherein at least one of the louvered sides is adjustably mounted, wherein the width of one or more of the entrance and exit of the enclosure is adjustable.

5. The apparatus of claim 4 , wherein two louvered sides comprise a respective pivot axis associated with the entrance of the enclosure, wherein the two louvered sides are configured to pivot about the respective pivot axis, therein controlling the width of the exit of the enclosure.

6. The apparatus of claim 3 , wherein the two louvered sides lie in non-parallel planes with respect to one another.

7. The apparatus of claim 6 , wherein the width of the entrance of the enclosure is generally defined by a width of an aperture upstream of the enclosure, and wherein the width of the exit of the enclosure generally defines an exit aperture of the beamline immediately upstream of a workpiece.

8. The apparatus of claim 3 , wherein the width of the entrance is less than the width of the exit.

9. The apparatus of claim 2 , further comprising a top side generally enclosing a top portion of the enclosure between the two louvered sides.

10. The apparatus of claim 9 , wherein the top side comprises a non-perforated plate.

11. The apparatus of claim 9 , wherein the top side comprises a top louvered side having a plurality of louvers defined therein.

12. The apparatus of claim 11 , wherein one or more of the plurality of louvers in the top side nearest the exit defines a top of an exit aperture.

13. The apparatus of claim 11 , wherein one or more of the plurality of louvers in the top side nearest the entrance are at the same height as an upstream aperture.

14. The apparatus of claim 2 , further comprising a bottom side generally enclosing a bottom portion of the enclosure between the two louvered sides.

15. The apparatus of claim 14 , wherein the bottom side comprises a plurality of perforations.

16. The apparatus of claim 1 , wherein the plurality of louvers are angled less than approximately 90 degrees with respect to the beamline when measured in a direction of travel of the ion beam.

17. The apparatus of claim 1 , wherein the enclosure is comprised of carbon.

18. The apparatus of claim 1 , wherein the enclosure comprises a plasma electron flood enclosure, wherein one or more electrodes are configured to apply a voltage to the ion beam within the plasma electron flood enclosure, therein controlling a charge of the ion beam therein.

19. The apparatus of claim 1 , wherein at least one of the at least one louvered sides is adjustably mounted, wherein a width of one or more of the entrance and exit of the enclosure is adjustable.

20. The apparatus of claim 1 , wherein the enclosure is not electrically, grounded or biased with respect to the ion implantation system.

21. A method for reducing particle contamination during an implantation of ions into one or more workpieces, the method comprising:

providing an ion implantation system for implanting ions into the one or more workpieces via an ion beam, wherein the ion implantation system comprises an enclosure configured to reside along a beamline of the ion implantation system, wherein the enclosure has an entrance, an exit, and at least one louvered side having a plurality of louvers defined therein; and

passing the ion beam through the entrance and exit of the enclosure, wherein the plurality of louvers of the at least one louvered side mechanically filter an edge of the ion beam and remove one or more contaminants from the beamline.

22. The method of claim 21 , wherein the enclosure comprises two louvered sides positioned generally opposite one another, and wherein respective widths of the entrance and exit of the enclosure, when measured perpendicular to the beamline, are generally defined by a position of the two louvered sides with respect to one another, the method further comprising:

controlling a position of at least one of the louvered sides, therein controlling the width of one or more of the entrance and exit of the enclosure.

23. The method of claim 22 , wherein the enclosure further comprises a bottom side generally enclosing a bottom portion of the enclosure between the two louvered sides, and wherein the bottom side comprises a plurality of perforations therethrough, wherein gravity forces the one or more contaminants to pass through the plurality of perforations, the method further comprising:

isolating the one or more contaminants from the ion implantation system once they pass through the bottom side of the enclosure.