IP Library Granted Patent US 7,267,875
Granted Patent B2
US 7,267,875 · App. 11/147,670 · Granted Sep 11, 2007

Post-deposition encapsulation of nanostructures: compositions, devices and systems incorporating same

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Quick Facts
Patent No.
US 7,267,875
App. No.
11/147,670
Granted
Sep 11, 2007
Kind
B2
Abstract

Ligand compositions for use in preparing discrete coated nanostructures are provided, as well as the coated nanostructures themselves and devices incorporating same. Methods for post-deposition shell formation on a nanostructure and for reversibly modifying nanostructures are also provided. The ligands and coated nanostructures of the present invention are particularly useful for close packed nanostructure compositions, which can have improved quantum confinement and/or reduced cross-talk between nanostructures.

Claims (51)

1. A discrete coated nanostructure comprising:

an individual nanostructure coated with a first coating, wherein the first coating has a first optical, electrical, physical or structural property, and wherein the first coating is convertible to a second coating having a different optical, electrical, physical or structural property than the first coating.

2. The coated nanostructure of claim 1 , wherein the first coating or the second coating encapsulates the nanostructure.

3. The coated nanostructure of claim 1 , wherein a diameter of the discrete coated nanostructure is between about 2 nm and about 6 nm.

4. The coated nanostructure of claim 1 , wherein the individual nanostructure comprises a nanocrystal, a nanodot, a nanowire, a nanorod, a nanotube, a quantum dot, a nanoparticle, a nanotetrapod, a nanotripod, a nanobipod, or a branched nanostructure.

5. The coated nanostructure of claim 1 , wherein the second coating comprises an oxide.

6. The coated nanostructure of claim 5 , wherein the second coating comprises SiO 2 .

7. The coated nanostructure of claim 6 , wherein the first coating comprises:

a first component comprising a silicon oxide cage complex; and

a second component comprising one or more moieties that bind to the nanostructure, wherein each moiety is independently coupled to the silicon oxide cage complex.

8. The coated nanostructure of claim 7 , wherein each moiety is independently coupled to the silicon oxide cage complex via an oxygen atom.

9. The coated nanostructure of claim 7 , wherein the silicon oxide cage complex comprises a silsesquioxane composition.

10. The coated nanostructure of claim 9 , wherein the silsesquioxane comprises a closed cage structure.

11. The coated nanostructure of claim 9 , wherein the silsesquioxane comprises a partially open cage structure.

12. The coated nanostructure of claim 9 , wherein the silsesquioxane is derivatized with one or more boron, methyl, ethyl, isopropyl, isobutyl, branched or straight chain alkane having between 3 and 22 carbons, branched or straight chain alkene having between 3 and 22 carbons, phenyl, cyclopentyl, cyclohexyl, cycloheptyl, isooctyl, norbornyl, or trimethylsilyl groups, or a combination thereof.

13. The coated nanostructure of claim 7 , wherein the silicon oxide cage complex comprises one or more discrete silicates.

14. The coated nanostructure of claim 13 , wherein the discrete silicate comprises a phosphosilicate.

15. The coated nanostructure of claim 7 , wherein the moiety comprises one or more of the protonated or deprotonated forms of phosphonate, carboxylate, amine, phosphinate, phosphonate ester, sulfonate, sulfinate, alcohol, amide, or thiol moieties.

16. The coated nanostructure of claim 6 , wherein the first coating is selected from the group consisting of:

where R is an organic group or a hydrogen atom.

17. The coated nanostructure of claim 16 , wherein R is a hydrocarbon group.

18. The coated nanostructure of claim 16 , wherein R is an alkyl group, a cyclic alkyl group, an aryl group, or an alkylaryl group.

19. The coated nanostructure of claim 18 , wherein R is an isobutyl group, a methyl group, a hexyl group, a cyclopentyl group, or a cyclohexyl group.

20. The coated nanostructure of claim 6 , wherein the first coating is selected from the group consisting of:

where R is an alkyl group, a heteroatom, or an electron withdrawing group; and

where R is a halide.

21. The coated nanostructure of claim 1 , wherein the first physical property comprises solubility and the second electrical property comprises nonconductivity.

22. The coated nanostructure of claim 1 , wherein the first optical property comprises light emission at a first wavelength and the second optical property comprises light emission at a second wavelength.

23. The coated nanostructure of claim 1 , wherein the first coating is converted to the second coating upon application of heat.

24. The coated nanostructure of claim 1 , wherein the first coating is converted to the second coating upon application of radiation.

25. An array comprising a plurality of discrete coated nanostructures of claim 1 .

26. The array of claim 25 , wherein the member nanostructures are present at a density greater than 1×10 10 /cm 2 .

27. The array of claim 25 , wherein the member nanostructures are present at a density greater than 1×10 12 /cm 2 .

28. The array of claim 25 , wherein the member nanostructures are coupled to a surface of a substrate.

29. The array of claim 28 , wherein the substrate comprises a silicon wafer.

30. The array of claim 28 , wherein a first portion of a member nanostructure is coupled to the substrate, and wherein a second portion of the member nanostructure is covered by the first coating or the second coating.

31. A device comprising a plurality of discrete coated nanostructures of claim 1 .

32. The device of claim 31 , wherein the device comprises a charge storage device.

33. The device of claim 31 , wherein the device comprises a memory device.

34. The device of claim 33 , wherein the device comprises a flash memory device.

35. The device of claim 31 , wherein the device comprises a photovoltaic device.

36. A coated nanostructure-containing composition comprising:

a plurality of nanostructures; and

a coating separating each member nanostructure, wherein the coating comprises a plurality of moieties that bind to a surface of the individual member nanostructure;

wherein the coating is convertible to an insulating shell after deposition of the coating and binding of the moieties to the surface of the member nanostructure.

37. The nanostructure-containing composition of claim 36 , wherein the member nanostructures are coupled to a surface of a silicon substrate, wherein the silicon substrate further comprises a silane ligand coupled to a second moiety that binds to the member nanostructures.

38. The nanostructure-containing composition of claim 37 , wherein the second moiety comprises one or more phosphonate ester, phosphonic acid, carboxylic acid, amine, phosphine, sulfonate, sulfinate, or thiol moieties.

39. A plurality of discrete nanostructures encompassed with rigid SiO 2 shells, wherein a diameter of a member nanostructure with its shell is less than about 6 nm, and wherein the member nanostructures are present at a density greater than 1×10 12 /cm 2 .

40. A method for post-deposition shell formation on a nanostructure, the method comprising:

providing one or more nanostructures having a ligand composition coating a surface of the nanostructure and thereby forming a first coating on the nanostructure, which first coating is curable to a rigid shell; and

curing the first coating and generating the rigid shell on the surface of the nanostructure, thereby forming the shell post-deposition.

Assignments (5)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 12, 2021
From: SANDISK TECHNOLOGIES LLC
To: WODEN TECHNOLOGIES INC.
Reel/Frame 058871/0928 →
CHANGE OF NAME Recorded May 25, 2016
From: SANDISK TECHNOLOGIES INC
To: SANDISK TECHNOLOGIES LLC
Reel/Frame 038813/0004 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 14, 2016
From: SANDISK CORPORATION
To: SANDISK TECHNOLOGIES INC.
Reel/Frame 038438/0904 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 5, 2012
From: NANOSYS, INC.
To: SANDISK CORPORATION
Reel/Frame 028321/0361 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 15, 2005
From: WHITEFORD, JEFFERY A.; BREWER, RHETT; BURETEA, MIHAI A.; CHEN, JIAN; CRUDEN, KAREN CHU; DUAN, XIANGFENG; FREEMAN, WILLIAM P.; HEALD, DAVID; LEON, FRANCISCO; LIU, CHAO; MEISEL, ANDREAS; MIN, KYU S.; PARCE, J. WALLACE; SCHER, ERIK C.
To: NANOSYS, INC.
Reel/Frame 016541/0239 →