A memory array includes a plurality of memory banks, each having a plurality of sectors and a plurality of sector decoders, each sector decoder operatively associated with a sector. A first plurality of lines provides first signals, and a second plurality of lines provides second signals. A first decoder apparatus is operatively associated with the first plurality of lines for receiving the first signals and for providing a first address signal by means of a first single line to a sector decoder of a memory bank. A second decoder apparatus is operatively associated with the second plurality of lines for receiving the second signals and for providing a second address signal by means of a second single line to a sector decoder of a memory bank.
1. A memory array comprising:
a plurality of memory banks, each comprising a plurality of sectors and a plurality of sector decoders, each sector decoder operatively associated with a sector;
a plurality of lines for providing signals; and
apparatus operatively associated with the plurality of lines for receiving the signals and providing an address signal to a sector decoder by means of a number of lines which is less than the number of lines in the plurality of lines.
2. The memory array of claim 1 wherein the address signal is provided to the sector decoder by means of a single line.
3. The memory array of claim 1 wherein the plurality of lines is outside the area of the plurality of memory banks.
4. The memory array of claim 3 wherein the single line extends within the area of the plurality of memory banks.
5. The memory array of claim 4 wherein the sectors of each memory bank are arranged in columns, with the columns in parallel relation, and wherein the single line extends within the area of the plurality of memory banks generally perpendicular to each column.
6. The memory array of claim 5 wherein the plurality of lines is a plurality of lines parallel to each column.
7. The memory array of claim 2 wherein the address signal is a read address signal.
8. The memory array of claim 2 wherein the address signal is a write address signal.
9. The memory array of claim 2 and further comprising a plurality of select decoders, each operatively associated with a memory bank, for selecting a memory bank containing the sector decoder to which the address signal is to be provided.
10. The memory array of claim 2 wherein the apparatus operatively associated with the plurality of lines comprises an operational decoder operatively associated with the plurality of lines and the single line.
11. A memory array comprising:
a plurality of memory banks, each comprising a plurality of sectors and a plurality of sector decoders, each sector decoder operatively associated with a sector;
a first plurality of lines for providing first signals;
a second plurality of lines for providing second signals;
first apparatus operatively associated with the first plurality of lines for receiving the first signals and for providing a first address signal by means of a first single line to a sector decoder of a memory bank; and
second apparatus operatively associated with the second plurality of lines for receiving the second signals and for providing a second address signal by means of a second single line to a sector decoder of a memory bank.
12. The memory array of claim 11 wherein the first and second pluralities of lines are outside the area of the plurality of memory banks.
13. The memory array of claim 12 wherein the lines of the first and second pluralities of lines are parallel.
14. The memory array of claim 12 wherein the first and second single lines extend within the area of the plurality of memory banks.
15. The memory array of claim 14 wherein the sectors of each memory bank are arranged in columns, with the columns in parallel relation, and wherein the first and second single lines extend within the area of the plurality of memory banks generally perpendicular to each column.
16. The memory array of claim 14 wherein the apparatus operatively associated with the first plurality of lines comprises a first operational decoder operatively associated with the first plurality of lines and the first single line, and wherein the apparatus operatively associated with the second plurality of lines comprises a second operational decoder operatively associated with the second plurality of lines and the second single line.
17. The memory array of claim 16 wherein the first and second operational decoders are outside the area of the plurality of memory banks.
18. The memory array of claim 17 wherein the first operational decoder receives the first signals and outputs a signal on the first single line, and wherein the second operational decoder receives the second signals and outputs a signal on the second single line.
19. The memory array of claim 18 wherein the first address signal is a read address signal, and the second address signal is a write address signal.
20. The memory array of claim 18 and further comprising a plurality of select decoders, each operatively associated with a memory bank, for selecting a memory bank containing a sector decoder to which an address signal is provided.