Semiconductor device, fabricating method thereof, and photomask
View Patent ↗There is provided a semiconductor device including a wafer and a focus monitoring pattern formed on the wafer. The focus monitoring pattern having at least one pair of first and second patterns, and the first pattern has an unexposed region surrounded by an exposed region, and the second pattern has an exposed region surrounded by an unexposed region. In addition, the present invention provides a method of fabricating a semiconductor device comprising the steps of forming at least one pair of first and second patterns on a wafer, the first pattern having an unexposed region surrounded by an exposed region, the second pattern having an exposed region surrounded by an unexposed region, and checking a focusing condition on exposure by measuring widths of the first and second patterns formed on the wafer.
1. A method of fabricating a semiconductor device comprising the steps of:
forming at least one pair of first and second patterns on a wafer, the first pattern having an unexposed region surrounded by an exposed region, the second pattern having an exposed region surrounded by an unexposed region;
checking a focusing condition on exposure by measuring widths of the first and second patterns formed on the wafer to determine whether there is a point located on the wafer that meets a best focusing condition; and
when determining that no point located on the wafer meets the best focusing condition, determining a slant of an image plane of the substrate in the exposed region.
2. The method as claimed in claim 1 , wherein the step of checking comprises the step of measuring widths of each of the first and second patterns in mutually orthogonal directions.
3. The method as claimed in claim 1 , further comprising the step of changing an exposing condition by using results of the step of checking the focusing condition on exposure.
4. A method for fabricating a semiconductor device comprising the steps of:
forming at least one pair of first and second patterns on a wafer, the first pattern having an unexposed region surrounded by an exposed region and the second pattern having an exposed region surrounded by an unexposed region, wherein the at least one pair of first and second patterns are formed on the wafer by exposing a substrate on the wafer to electromagnetic radiation passing through a photomask having marks for monitoring formed thereon, each of the marks comprising the at least one pair of first and second patterns; and
checking a focusing condition on exposure by measuring widths of the first and second patterns formed on the wafer, wherein the step of checking the focusing condition on exposure comprises the steps of:
determining whether there is a point located in an exposed region on the wafer that meets a best focusing condition by measuring sizes of the marks; and
determining a slant of an image plane of the substrate in the exposed region by converting the sizes of the marks into displacements when there is no point in the exposed region that meets the best focusing condition.
5. The method as claimed in claim 4 , further comprising the step of changing the sizes of marks for monitoring to displacements in a vertical direction and inverting signs of the displacements to thus determine the slant of the image plane in the exposed region when there is a point that meets the best focusing condition.
6. The method as claimed in claim 4 , wherein the step of determining the slant of the image plane comprises the step of subjecting the displacements to least squares approximation to obtain the slant of the image plane.
7. A computer program product for use in fabrication of a semiconductor device comprising the steps of:
forming at least one pair of first and second patterns on a semiconductor wafer, the first pattern having an unexposed region surrounded by an exposed region, the second pattern having an exposed region surrounded by an unexposed region;
checking a focusing condition on exposure by measuring widths of the first and second patterns formed on the semiconductor wafer to determine whether there is a point located on the wafer that meets a best focusing condition; and
when determining that no point located on the wafer meets the best focusing condition, determining a slant of an image plane of the substrate in the exposed region.