Granted Patent B2

US 7,504,728 · App. 11/298,030 · Granted Mar 17, 2009

Abstract

Claims (40)

1. An integrated circuit including active circuitry and at least one bond pad, the at least one bond pad comprising:

a metallization layer, the metallization layer in electrical contact with at least a portion of the active circuitry; and

a capping layer, the capping layer formed over at least a portion of the metallization layer and in electrical contact with the metallization layer;

wherein the capping layer is patterned to comprise a plurality of etched grooves;

wherein one or more of said etched grooves are formed in an upper surface of the capping layer but do not extend through the capping layer to a lower surface of the capping layer;

at least one of said etched grooves thereby having a depth which is less than a thickness of the capping layer between said upper and lower surfaces.

2. The integrated circuit of claim 1 , wherein the metallization layer comprises copper.

3. The integrated circuit of claim 1 , wherein the capping layer comprises aluminum.

4. The integrated circuit of claim 1 , further comprising a passivation layer, the passivation layer defining an opening over the metallization layer through which the capping layer electrically contacts the metallization layer.

5. The integrated circuit of claim 1 , wherein the capping layer has a thickness between about 500 and 2,500 nanometers.

6. The integrated circuit of claim 1 , wherein at least one of the etched grooves in the capping layer has a width between about 350 and 1,500 nanometers.

7. The integrated circuit of claim 1 , wherein the depth of at least one of the etched grooves in the capping layer is about 40 to 60% of the thickness of the capping layer.

8. The integrated circuit of claim 1 , wherein the capping layer comprises a plurality of etched grooves that run parallel relative to one another.

9. The integrated circuit of claim 1 , wherein the capping layer in the plane parallel to a surface of the capping layer is substantially square or substantially rectangular.

10. The integrated circuit of claim 1 , wherein at least one of the etched grooves in the capping layer is located substantially proximate to one or more corners of the capping layer.

11. The integrated circuit of claim 1 , wherein at least one of the etched grooves in the capping layer runs substantially perpendicular to one or more edges of the capping layer.

12. The integrated circuit of claim 1 , wherein at least one of the etched grooves in the capping layer runs substantially at a 45 degree angle relative to one or more edges of the capping layer.

13. The integrated circuit of claim 1 , wherein the bond pad further comprises a barrier layer, the barrier layer lying between the metallization layer and the capping layer.

14. The integrated circuit of claim 13 , wherein the barrier layer comprises tantalum.

15. The integrated circuit of claim 1 , wherein at least one of the one or more bond pads is an extended bond pad.

16. An integrated circuit including active circuitry and at least one bond pad, the at least one bond pad comprising:

a metallization layer, the metallization layer in electrical contact with at least a portion of the active circuitry;

a capping layer, the capping layer formed over at least a portion of the metallization layer and in electrical contact with the metallization layer; and

a passivation layer, the passivation layer defining an opening over the metallization layer through which the capping layer electrically contacts the metallization layer;

wherein the capping layer is patterned to comprise a plurality of etched grooves; and

wherein the capping layer lies at least partially on top of the passivation layer.

17. An integrated circuit mounted in an integrated circuit package, the integrated circuit including active circuitry and a bond pad, wherein the bond pad comprises:

a metallization layer, the metallization layer in electrical contact with at least a portion of the active circuitry; and

a capping layer, the capping layer formed over at least a portion of the metallization layer and in electrical contact with the metallization layer;

wherein the capping layer is patterned to comprise a plurality of etched grooves;

wherein one or more of said etched grooves are formed in an upper surface of the capping layer but do not extend through the capping layer to a lower surface of the capping layer;

at least one of said etched grooves thereby having a depth which is less than a thickness of the capping layer between said upper and lower surfaces.

18. The integrated circuit of claim 17 , wherein the integrated circuit package is electrically coupled to the integrated circuit using wire bonding technology.

19. The integrated circuit of claim 17 , wherein the integrated circuit package is electrically coupled to the integrated circuit using flip chip bonding technology.

20. A method of forming a bond pad in an integrated circuit including active circuitry, the method comprising the steps of:

forming a metallization layer, the metallization layer in electrical contact with at least a portion of the active circuitry; and

forming a capping layer over at least a portion of the metallization layer and in electrical contact with the metallization layer;

wherein the capping layer is patterned to comprise a plurality of etched grooves;

wherein one or more of said etched grooves are formed in an upper surface of the capping layer but do not extend through the capping layer to a lower surface of the capping laver;

at least one of said etched grooves thereby having a depth which is less than a thickness of the capping layer between said upper and lower surfaces.

Assignments (9)