Formation of oxidation-resistant seed layer for interconnect applications
View Patent ↗An interconnect structure of the single or dual damascene type and a method of forming the same, which substantially reduces the surface oxidation problem of plating a conductive material onto a noble metal seed layer are provided. In accordance with the present invention, a hydrogen plasma treatment is used to treat a noble metal seed layer such that the treated noble metal seed layer is highly resistant to surface oxidation. The inventive oxidation-resistant noble metal seed layer has a low C content and/or a low nitrogen content.
1. An interconnect structure comprising:
a dielectric material including at least one opening therein;
a diffusion barrier located within said at least one opening;
an oxidation-resistant noble metal seed layer located on said diffusion barrier, said oxidation-resistant noble metal seed layer comprises a noble metal seed layer having an upper surface region that is resistant to oxidation; and
an interconnect conductive material located within the at least one opening atop said oxidation-resistant noble metal seed layer.
2. The interconnect structure of claim 1 wherein said dielectric material is one of SiO 2 , a silsesquioxane, a C doped oxide that includes atoms of Si, C, O and H, and a thermosetting polyarylene ether.
3. The interconnect structure of claim 1 wherein said at least one opening is a line opening, a combined line opening and via opening, or combinations thereof.
4. The interconnect structure of claim 1 wherein said oxidation-resistant noble metal seed layer comprises a metal or metal alloy from Group VIIIA of the Periodic Table of Elements.
5. The interconnect structure of claim 4 wherein said oxidation-resistant noble metal seed layer comprises Ru, Ir, or Rh.
6. The interconnect structure of claim 1 wherein said upper surface region has a carbon content of about 2 atomic percent or less.
7. The interconnect structure of claim 1 wherein said upper surface region has a nitrogen content of about 3 atomic percent or less.
8. The interconnect structure of claim 1 wherein said diffusion barrier comprises Ta, TaN, Ti, TiN, Ru, RuN, RuTa, RuTaN, W, WN or any other material that can serve as a barrier to prevent conductive material from diffusing there through.
9. The interconnect structure of claim 1 wherein said interconnect conductive material is one of a conductive metal, an alloys comprising at least one conductive metal, and a conductive metal silicide.
10. The interconnect structure of claim 9 wherein said interconnect conductive material is a conductive metal selected from the group consisting of Cu, Al, W and AlCu.
11. The interconnect structure of claim 1 wherein said interconnect conductive material comprises Cu and said oxidation-resistant noble metal seed layer comprises Ru, Ir or Rh.
12. The interconnect structure of claim 1 wherein said interconnect conductive material is present in an open-via bottom structure, an anchored-via bottom structure, or a closed-bottom via structure.
13. A semiconductor structure comprising:
a film stack including an oxidation-resistant noble metal seed layer sandwiched between a substrate and a conductive metal-containing material, said oxidation-resistant noble metal seed layer comprises a noble metal seed layer having an upper surface region that is resistant to oxidation.
14. An interconnect structure comprising:
a dielectric material including at least one opening therein;
a diffusion barrier located within said at least one opening;
an oxidation-resistant noble metal seed layer located on said diffusion barrier, said oxidation-resistant noble seed layer has a surface region having a carbon content of about 2 atomic percent or less; and
an interconnect conductive material located within the at least one opening atop said oxidation-resistant noble metal seed layer.
15. An interconnect structure comprising:
a dielectric material including at least one opening therein;
a diffusion barrier located within said at least one opening;
an oxidation-resistant noble metal seed layer located on said diffusion barrier, said oxidation-resistant noble seed layer has a surface region having a nitrogen content of about 3 atomic percent or less; and
an interconnect conductive material located within the at least one opening atop said oxidation-resistant noble metal seed layer.