IP Library Granted Patent US 7,777,218
Granted Patent B1
US 7,777,218 · App. 11/462,525 · Granted Aug 17, 2010

Memory cell containing copolymer containing diarylacetylene portion

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Quick Facts
Patent No.
US 7,777,218
App. No.
11/462,525
Granted
Aug 17, 2010
Kind
B1
Abstract

An organic memory cell containing an organic semiconductor layer containing a copolymer is disclosed. The copolymer contains a diarylacetylene portion and at least one of an arylacetylene portion and a heterocyclic acetylene portion. The copolymer may be a random copolymer, an alternating copolymer, a random block copolymer, or a block copolymer. Methods of making an organic memory devices/cells containing the copolymer, methods of using the organic memory devices/cells, and devices such as computers containing the organic memory devices/cells are also disclosed.

Claims (26)

1. An organic memory cell comprising:

a first electrode and a second electrode;

a controllably conductive media between the first and second electrodes, the controllably conductive media comprising a passive layer comprising at least copper sulfide and an organic semiconductor layer, the organic semiconductor layer comprising a copolymer comprising a diarylacetylene portion and at least one of an arylacetylene portion and a heterocyclic acetylene portion,

wherein the copolymer is formed by polymerization of at least a diarylacetylene in the presence of at least one selected from an arylacetylene and a heterocyclic acetylene.

2. The organic memory cell of claim 1 , wherein the first electrode comprises at least copper.

3. The organic memory cell of claim 1 , wherein the copolymer is a random copolymer, an alternating copolymer, a random block copolymer, or a block copolymer.

4. The organic memory cell of claim 1 , wherein the diarylacetylene portion and the arylacetylene portion independently comprises at least one of monocyclic aromatic hydrocarbon group consisting of 6 to 18 carbon atoms and fused polycyclic aromatic hydrocarbon group.

5. The organic memory cell of claim 1 , wherein the heterocyclic acetylene portion comprises at least one selected from the group consisting of a pyridyl group, a pyridazinyl group, a pyrimidyl group, a pyrazinyl group, a quinolyl group, an isoquinolyl group, a quinazolinyl group, a cinnolinyl group, and a phthalazinyl group.

6. The organic memory cell of claim 1 , wherein at least one of the diarylacetylene portion, the arylacetylene portion, and the heterocyclic acetylene portion has at least one substituted group thereon.

7. The organic memory cell of claim 4 , wherein the monocyclic aromatic hydrocarbon group is a phenyl group.

8. The organic memory cell of claim 4 , wherein the fused polycyclic aromatic hydrocarbon group comprises at least one selected from the group consisting of a naphthyl group, an anthryl group, a phenanthryl group, a naphthacenyl group, a pyrenyl group, a triphenylenyl group, and a chrysenyl group.

9. The organic memory cell of claim 1 , wherein the copolymer comprises a diphenylacetylene portion and a phenylacetylene portion.

10. The organic memory cell of claim 1 , wherein the copolymer comprises from about 0.05% to about 99.95% by weight of the diarylacetylene portion and from about 99.95% to about 0.05% by weight of at least one of the arylacetylene portion and the heterocyclic acetylene portion.

11. The organic memory cell of claim 1 , wherein the copolymer comprises from about 50% to about 99.9% by weight of the diarylacetylene portion and from about 50% to about 0.1% by weight of at least one of the arylacetylene portion and the heterocyclic acetylene portion.

12. The organic memory cell of claim 1 , wherein the organic semiconductor layer has a thickness of about 0.001 μm or more and about 5 μm or less and the passive layer has a thickness of about 2 Å or more and about 0.1 μm or less.

13. A hand held device comprising the organic memory cell of claim 1 .

14. A memory device comprising a plurality of memory cells, the plurality of memory cells comprising:

a first electrode and a second electrode;

a controllably conductive media between the first and second electrodes, the controllably conductive media comprising a passive layer comprising at least copper sulfide and an organic semiconductor layer, the organic semiconductor layer comprising a copolymer comprising a diarylacetylene portion and at least one of an arylacetylene portion and a heterocyclic acetylene portion,

wherein the copolymer is formed by polymerization of at least a diarylacetylene in the presence of at least one selected from an arylacetylene and a heterocyclic acetylene.

15. The memory device of claim 14 , wherein the copolymer comprises a diphenylacetylene portion and a phenylacetylene portion.

16. The memory device of claim 14 , wherein the copolymer comprises from about 0.05% to about 99.95% by weight of the diarylacetylene portion and from about 99.95% to about 0.05% by weight of at least one of the arylacetylene portion and the heterocyclic acetylene portion.

17. The memory device of claim 14 , wherein the first electrode comprises at least copper.

18. The memory device of claim 14 , wherein the diarylacetylene portion and the arylacetylene portion independently comprises at least one of monocyclic aromatic hydrocarbon group consisting of 6 to 18 carbon atoms and fused polycyclic aromatic hydrocarbon group.

19. A hand held device comprising the memory device of claim 14 .

20. A cell phone comprising the memory device of claim 14 .

Assignments (7)
CORRECTIVE ASSIGNMENT TO CORRECT THE 8647899 PREVIOUSLY RECORDED ON REEL 035240 FRAME 0429. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY INTERST. Recorded Nov 3, 2020
From: CYPRESS SEMICONDUCTOR CORPORATION; SPANSION LLC
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 058002/0470 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 14, 2016
From: CYPRESS SEMICONDUCTOR CORPORATION
To: MONTEREY RESEARCH, LLC
Reel/Frame 040911/0238 →
PARTIAL RELEASE OF SECURITY INTEREST IN PATENTS Recorded Aug 11, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
To: CYPRESS SEMICONDUCTOR CORPORATION; SPANSION LLC
Reel/Frame 039708/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 1, 2015
From: SPANSION, LLC
To: CYPRESS SEMICONDUCTOR CORPORATION
Reel/Frame 036042/0212 →
SECURITY INTEREST Recorded Mar 21, 2015
From: CYPRESS SEMICONDUCTOR CORPORATION; SPANSION LLC
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 035240/0429 →
SECURITY AGREEMENT Recorded Aug 23, 2012
From: SPANSION LLC; SPANSION INC.; SPANSION TECHNOLOGY INC.; SPANSION TECHNOLOGY LLC
To: BARCLAYS BANK PLC
Reel/Frame 028840/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 4, 2006
From: LEONARD, WILLIAM G.; KINGSBOROUGH, RICHARD P.; SOKOLIK, IGOR
To: SPANSION LLC
Reel/Frame 018055/0936 →