Routing under bond pad for the replacement of an interconnect layer
View Patent ↗The present invention provides a solder bump structure. In one aspect, the solder bump structure is utilized in a semiconductor device, such as an integrated circuit. The semiconductor device comprises active devices located over a semiconductor substrate, interconnect layers comprising copper formed over the active devices, and an outermost metallization layer positioned over the interconnect layers. The outermost metallization layer comprises aluminum and includes at least one bond pad and at least one interconnect runner each electrically connected to an interconnect layer. An under bump metallization layer (UBM) is located over the bond pad, and a solder bump is located over the UBM.
1. A semiconductor device, comprising:
a bond pad layer, comprising aluminum or an alloy thereof and including at least one bond pad segment and at least one interconnect runner segment, wherein the at least one interconnect runner segment and the at least one bond pad segment are located on a same level within the semiconductor device and extend through openings in a first passivation layer located under the bond pad layer to at least one copper runner segment of a final metallization layer located under the passivation layer and to electrically couple the at least one interconnect runner segment and the at least one bond pad segment to different portions of the final metallization layer;
a second passivation layer located over the first passivation layer and the bond pad layer the second passivation layer having a solder bump opening located therein that exposes the bond pad segment; and
an under bump metallization (UBM) layer located in the solder bump opening and physically, contacting the exposed bond bad segment.
2. The device recited in claim 1 , wherein a solder bump is located on the UBM layer.
3. The device recited in claim 2 , wherein the solder bump comprises lead or its alloys or is lead-free.
4. The device recited in claim 1 , wherein the at least one bond pad segment extends through a plurality of openings in the first segmented passivation layer and contacts a first segment of the final metallization layer and the at least one interconnect runner segment extends through another plurality of openings in the first segmented passivation layer and contacts a second segment of the final metallization layer, wherein a material layer is located between the first and second segments of the copper interconnect layer.
5. The device recited in claim 1 , wherein the final metallization layer comprises a copper alloy.
6. A semiconductor device, comprising:
a final interconnect segmented metal layer;
a first passivation layer located on the final interconnect segmented metal layer and having openings extending therethrough to portions of the final interconnect segmented metal layer;
a segmented bond pad layer segmented into at least one interconnect runner segment and at least one bond pad segment and wherein the segmented bond pad layer is located on the first passivation layer and wherein the at least one interconnect runner segment and the at least one bond pad segment extend through the openings to the final interconnect segmented metal layer, to thereby make connection with the final interconnect segmented metal layer;
a second passivation layer located on the segmented bond pad layer and the segmented first passivation layer and having an under bump metallization opening formed therein and exposing a portion of the at least one bond pad segment; and
an under bump metallization layer located within the opening of the second passivation layer and on the at least one bond pad segment.
7. The device recited in claim 6 , wherein the segmented bond pad layer comprises aluminum.
8. The device recited in claim 6 , wherein the segmented first passivation layer comprises silicon nitride.
9. The device recited in claim 6 , wherein the segmented second passivation layer comprises oxide/nitride.
10. The device recited in claim 6 , further including a solder bump located on the under bump metallization layer.