Method for modifying surface of substrate and method for manufacturing semiconductor device
An insulating film is formed on a substrate selected from a group containing a BT resin substrate and an epoxy resin substrate. Copper wirings and copper posts including wirings are formed on the insulating film. Plasma processing is effected on exposed surfaces of the insulating film, copper wirings and copper posts provided over the semiconductor substrate, using nitrogen-type gas. An encapsulating portion is formed which covers and seals the exposed surfaces.
1 . A method for modifying a surface of a substrate having an insulating film and constituent elements with copper as a material, including wirings provided over the insulating film, said method comprising the steps of:
preparing the substrate selected from a group containing a BT resin substrate and an epoxy resin substrate; and
effecting plasma processing on the substrate using nitrogen-type gas.
2 . The method according to claim 1 , wherein said plasma processing step is a step for setting pressure to 40 Pa even at a maximum to thereby perform the plasma processing with ions as main activated species.
3 . The method according to claim 2 , wherein said plasma processing step is a step for setting pressure to 26.7 Pa to thereby perform the plasma processing with ions as main activated species.
4 . The method according to claim 2 , wherein said plasma processing step is a step for performing the plasma processing for 20 seconds even in a shortest time assuming that power to be applied is 1000 W even at a maximum, the flow rate of nitrogen-type gas is 500 sccm even at a maximum, and a stage temperature is 100° C. even at a highest temperature.
5 . The method according to claim 4 , wherein said plasma processing step is a step for performing the plasma processing for 20 seconds assuming that power to be applied is 500 W, the flow rate of nitrogen-type gas is 200 sccm and a stage temperature is 80° C.
6 . The method according to claim 2 , wherein said plasma processing step is a step for performing the plasma processing for 45 seconds even in a shortest time assuming that power to be applied is 1000 W even at a maximum, the flow rate of nitrogen-type gas is 500 sccm even at a maximum and a stage temperature is 100° C. even at a highest temperature, thereby to turn brown an exposed surface of each of the constituent elements with said copper as the material.
7 . The method according to claim 6 , wherein said plasma processing step is a step for performing the plasma processing for 60 seconds assuming that power to be applied is 500 W, the flow rate of nitrogen gas is 200 sccm, and a stage temperature is 80° C., thereby to turn brown an exposed surface of each of the constituent elements with said copper as the material.
8 . The method according to claim 1 , wherein said plasma processing step is a step for effecting the plasma processing on the substrate in which the insulating film is formed of a material selected from a resin group containing a polyimide resin, an epoxy resin, a silicone resin, a phenolic resin, a polyester resin, an acrylic resin, polybenzooxazol and benzo-cyclo-butene.
9 . The method according to claim 1 , wherein said plasma processing step is a step for performing the plasma processing using, as the nitrogen-type gas, a sort of gas selected from a group containing nitrogen gas, ammonia gas and hydrazine gas or mixed gas obtained by arbitrarily combining two or more sorts of gases selected therefrom.
10 . The method according to claim 1 , wherein after said plasma processing step, heat treatment for increasing the ratio of existence of Cu 2 O with respect to the ratio of existence of copper on the surface of each of the constituent elements with copper as the material is further performed.
11 . The method according to claim 10 , wherein said heat treatment step is a heat treatment step for setting the ratio of existence of Cu 2 O per unit area of the surface of each of the constituent elements with copper as the material to 50% even at a minimum.
12 . The method according to claim 10 , wherein said heat treatment step is a heat treatment step executed for 30 seconds in a temperature range of 170° C. to 180° C.
13 . A method for manufacturing a semiconductor device, comprising the steps of:
forming an insulating film over a substrate;
forming constituent elements with copper as a material, including wirings over the insulating film;
effecting plasma processing on exposed surfaces of the insulating film and the constituent elements provided over the substrate, using nitrogen-type gas; and
forming an encapsulating portion which seals the exposed surfaces of the insulating film and the constituent elements so as to cover the exposed surfaces thereof.
14 . The method according to claim 13 , herein said plasma processing step is a step for setting pressure to 40 Pa even at a maximum to thereby perform the plasma processing with ions as main activated species.
15 . The method according to claim 14 , wherein said plasma processing step is a step for setting pressure to 26.7 Pa to thereby perform the plasma processing with ions as main activated species.
16 . The method according to claim 14 , wherein said plasma processing step is a step for performing the plasma processing for 20 seconds even in a shortest time assuming that power to be applied is 1000 W even at a maximum, the flow rate of nitrogen-type gas is 500 sccm even at a maximum, and a stage temperature is 100° C. even at a highest temperature.
17 . The method according to claim 16 , wherein said plasma processing step is a step for performing the plasma processing for 20 seconds assuming that power to be applied is 500 W, the flow rate of nitrogen-type gas is 200 sccm and a stage temperature is 80° C.
18 . The method according to claim 14 , wherein said plasma processing step is a step for performing the plasma processing for 45 seconds even in a shortest time assuming that power to be applied is 1000 W even at a maximum, the flow rate of nitrogen-type gas is 500 sccm even at a maximum and a stage temperature is 100° C. even at a highest temperature, thereby to turn brown an exposed surface of each of the constituent elements with said copper as the material.
19 . The method according to claim 18 , wherein said plasma processing step is a step for performing the plasma processing for 60 seconds assuming that power to be applied is 500 W, the flow rate of nitrogen gas is 200 sccm, and a stage temperature is 80° C., thereby to turn brown an exposed surface of each of the constituent elements with said copper as the material.
20 . The method according to claim 13 , wherein said insulating film forming step is a step for forming the insulating film by a material selected from a resin group containing a polyimide resin, an epoxy resin, a silicone resin, a phenolic resin, a polyester resin, an acrylic resin, polybenzooxazol and benzo-cyclo-butene, and
wherein said encapsulating portion forming step is a step for forming the encapsulating portion by a material selected from a group containing an epoxy resin and a polyimide resin.
21 . The method according to claim 13 , wherein said plasma processing step is a step for performing the plasma processing using, as the nitrogen-type gas, a sort of gas selected from a group containing nitrogen gas, ammonia gas and hydrazine gas or mixed gas obtained by arbitrarily combining two or more sorts of gases selected therefrom.
22 . The method according to claim 13 , wherein said plasma processing step is a step for effecting the plasma processing on the substrate prior to a fractionizing step and further includes a fractionizing step after the said plasma processing step.
23 . The method according to claims 13 , wherein after said plasma processing step heat treatment for increasing the ratio of existence of Cu 2 O with respect to the ratio of existence of copper on the surface of each of the constituent elements with copper as the material is further performed.
24 . The method according to claim 23 , wherein said heat treatment step is a heat treatment step for setting the ratio of existence of Cu 2 O per unit area of the surface of each of the constituent elements with copper as the material to 50% even at a minimum.
25 . The method according to claim 23 , wherein said heat treatment step is a heat treatment step executed for 30 seconds in a temperature range of 170° C. to 180° C.
26 . The method according to claim 23 , wherein said plasma processing step is a step performed on the substrate prior to the fractionizing step, and the heat treatment step is executed after said plasma processing step and the fractionizing step is further executed after the heat treatment step.
27 . A semiconductor device wherein the ratio of existence of Cu 2 O per unit area of a surface of each of constituent elements with copper formed on a semiconductor substrate as a material is set as 50% even at a minimum.