Semiconductor device and control method of the same
View Patent ↗The present invention is a semiconductor device including: a resistor R 11 (first resistor part) and an FET 15 (second resistor part) connected in series between a power supply Vcc (first power supply) and ground (second power supply); an output node N 11 provided between the resistor R 11 and FET 15 and used for outputting a reference voltage; a feedback node N 12 provided between the power supply Vcc and the ground; and a voltage control circuit ( 19 ) that maintains a voltage of the feedback node N 12 at a constant level by using the reference voltage of the output node N 11 and the voltage of the feedback node N 12 . The present invention can provide a semiconductor device having a reference voltage generating circuit capable of generating the reference voltage that does not greatly depend on a power supply voltage and its control method.
1. A semiconductor device comprising:
first and second resistor parts connected in series between a first power supply and a second power supply;
an output node provided between the first and second resistor parts, a reference voltage being output via the output node;
a feedback node provided between the first power supply and the first resistor part; and
a voltage control circuit that maintains a voltage of the feedback node at a constant level by using the reference voltage of the output node and the voltage of the feedback node, wherein the voltage control circuit comprises a differential amplifier circuit that receives the reference voltage of the output node and the voltage of the feedback node, and a current control circuit that controls a current flowing between the first power supply and the feedback node by using an output of the differential amplifier circuit, wherein the current control circuit includes an FET having a gate connected to the output of the differential amplifier circuit and a source and a drain connected to the first power supply and the feedback node, respectively.
2. The semiconductor device as claimed in claim 1 , wherein the voltage of the feedback node is divided with a voltage ratio of the output node and the feedback node, and a divided voltage is applied to the differential amplifier circuit.
3. The semiconductor device as claimed in claim 1 , wherein the second resistor part is a diode having a forward direction from the output node to the second power supply.
4. The semiconductor device as claimed in claim 1 , wherein the first resistor part is made of polysilicon and has a temperature coefficient of current approximately equal to that of the second resistor part.
5. A semiconductor device comprising:
first and second resistor parts connected in series between a first power supply and a second power supply;
an output node provided between the first and second resistor parts a reference voltage being output via the output node;
a feedback node provided between the first power supply and the first resistor part;
a voltage control circuit that maintains a voltage of the feedback node at a constant level by using the reference voltage of the output node and the voltage of the feedback node;
a memory cell connected to the output node;
a voltage generating circuit that generates a voltage applied to the memory cell by using the reference voltage, wherein the reference voltage is used for reading data from the memory cell; and
a switch that is coupled with the output node and causes the reference voltage to be generated in response to a change of an address that specifies the memory cell.
6. The semiconductor device as claimed in claim 5 , wherein the voltage of the feedback node is divided with a voltage ratio of the output node and the feedback node, and a divided voltage is applied to the differential amplifier circuit.
7. The semiconductor device as claimed in claim 5 , wherein the second resistor part is a diode having a forward direction from the output node to the second power supply.
8. The method as claimed in claim 7 , further comprising:
programming the memory cell using the reference voltage; and
erasing the memory cell using the reference voltage.
9. The semiconductor device as claimed in claim 5 , wherein the first resistor part is made of polysilicon and has a temperature coefficient of current approximately equal to that of the second resistor part.
10. The semiconductor device as claimed in claim 5 , wherein the reference voltage is used for programming and erasing the memory cell.
11. A method of controlling a semiconductor device equipped with first and second resistor parts connected in series between a first power supply and a second power supply; an output node provided between the first and second resistor parts, a reference voltage being output via the output node; and a feedback node provided between the first power supply and the first resistor part, the method comprising the steps of:
maintaining a voltage of the feedback node at a constant level by using the reference voltage of the output node and the voltage of the feedback node;
outputting the reference voltage via the output node;
generating a voltage applied to a memory cell using the reference voltage;
reading data from the memory cell using the reference voltage; and
generating the reference voltage in response to a change of address that specifies the memory cell.