Sense amplifier circuit and method
View Patent ↗A sense amplifier circuit can be coupled to a match line for receiving a match line voltage and to a low potential line for receiving a low potential voltage from a memory array. The sense amplifier circuit can include a charging circuit coupled between a power supply voltage and the match line voltage that comprises no p-channel transistors. A discharging circuit can be coupled between the low potential voltage and a ground supply voltage. An n-channel sensing device can coupled to detect a potential difference between the match line voltage and the low potential voltage.
1. A sense amplifier circuit coupled to a match line for receiving a match line voltage and to a low potential line for receiving a low potential voltage from a memory array, wherein the sense amplifier circuit comprises:
a charging circuit coupled between a power supply voltage and the match line voltage, wherein the charging circuit comprises no p-channel transistors;
a discharging circuit coupled between the low potential voltage and a ground supply voltage; and
an n-channel sensing device coupled for detecting a potential difference between the match line voltage and the low potential voltage.
2. The sense amplifier circuit as recited in claim 1 , wherein the charging circuit comprises a pair of n-channel transistors with source-drain paths coupled in series between the power supply voltage and the match line voltage.
3. The sensing amplifier circuit as recited in claim 1 , wherein the charging circuit comprises a single n-channel transistor with a source-drain path coupled in series between the power supply voltage and the match line voltage.
4. A sense amplifier circuit, comprising
a compare section comprising a plurality of content addressable memory (CAM) cells that each include at least one transistor of a first conductivity type having a controllable impedance path coupled between a match line and an electrically isolatable line;
a charge circuit coupled to the compare section that includes at least a first charge transistor of the first conductivity type with a controllable impedance path coupled between the compare section and a first power supply node;
a discharge circuit, coupled between at least the electrically isolatable line and a second power supply node; and
a sense circuit that activates a sense signal in response to a differential voltage between the match line and the electrically isolatable line.
5. The sense amplifier of claim 4 , wherein:
the charge circuit is coupled between the first power supply node and the match line.
6. The sense amplifier circuit of claim 5 , wherein:
the CAM cells each include two transistors or the first conductivity type having source-drain paths coupled in series with one another between the match line and the electrically isolatable line; and
the at least first charge transistor includes a first charge transistor and second charge transistor of the first conductivity type having source-drain paths coupled in series with one another between the match line and the first power supply node.
7. The sense amplifier circuit of claim 5 , wherein
the sense circuit is coupled to a second power supply node and generates a sense signal that varies between the potential at the second power supply node and a third power supply node; and
the first power supply node is coupled to receive a power supply voltage greater than that received at the second power supply node.
8. The sense amplifier circuit of claim 4 , wherein:
the sense circuit generates a feedback signal having a first level in response to the sense signal having a first state and a second level in response to the sense signal having a second state; and
the first charge transistor has a gate coupled to the feedback signal.
9. The sense amplifier circuit of claim 8 , wherein:
the discharge circuit includes at least a first discharge transistor having a gate coupled to the feedback signal.
10. The sense amplifier circuit of claim 8 , wherein:
the sense circuit further generates a complementary feedback signal that is the inverse of the feedback signal; and
the charge circuit further includes a transmission gate circuit that couples an enable signal to the gate of the at least a first charge transistor, the transmission gate circuit including a first transmission transistor of the first conductivity type having a gate coupled to receive the feedback signal and a second transmission transistor of a second conductivity type having a gate coupled to receive the complementary feedback signal.
11. The sense amplifier circuit of claim 8 , wherein:
the charge circuit further includes a charge enable transistor of a second conductivity type having a source-drain path coupled in series with a source-drain path of the at least first charge transistor.
12. The sense amplifier circuit of claim 11 , wherein:
the charge circuit further includes a second charge transistor of the first conductivity type having a source-drain path coupled in series with a source-drain path of the at least first charge transistor, the second charge transistor having a gate coupled to the first power supply node.
13. The sense amplifier of claim 4 , further including:
the charge circuit is coupled between the first power supply node and the electrically isolatable line; and
a current mirror circuit formed from transistors of a second conductivity type having a first leg coupled to the source-drain path of the at least first charge transistor and a second leg coupled to the match line.
14. The sense amplifier of claim 13 , wherein:
the current mirror circuit further includes an enable transistor of the second conductivity type having a source-drain path coupled between the first power supply node and the gates of the other transistors of the current mirror, and a gate coupled to receive an enable signal.
15. The sense amplifier circuit of claim 4 , wherein:
the sense circuit generates a Feedback signal that varies between the potential at a first power supply node and a low power supply node; and
the charge circuit further includes a second charge transistor having a gate coupled to a second power supply node and a source-drain path in series with a source-drain path of the first charge transistor; wherein
the first power supply node is coupled to a receive a first power supply voltage different from a power supply voltage received at the second power supply node.
16. The sense amplifier circuit of claim 4 , wherein:
the sense circuit includes a sense transistor of the first conductivity type having a gate coupled to the match line and a source coupled to the electrically isolatable line.
17. The sense amplifier circuit of claim 16 , wherein:
the sense circuit includes
sense logic that generates the sense signal according to the potential at the drain of the sense transistor, the sense logic driving the sense signal between a potential at a first power supply node and a low power supply node, and
feedback logic that generates a feedback signal according to the sense signal, the feedback logic driving die sense signal between a potential at a second power supply node and the low power supply node, the second power supply node coupled to receive a larger power supply voltage than the first power supply node.
18. A sense amplifier circuit, comprising:
a compare section comprising a plurality of content addressable memory (CAM) cells coupled between a match line and an electrically isolatable line, wherein the electrically isolable line is not a static ground line;
a sense circuit comprising
a sense transistor of a first conductivity type with a gate coupled to the match line, a source coupled to the electrically isolatable line,
a holding transistor of a second conductivity type having a source drain path coupled between the drain of the sense transistor and a first power supply node, and
an inverting logic circuit having an input coupled to the drain of the sense transistor and an output coupled to the gate of the holding transistor.
19. The sense amplifier circuit of claim 18 , further including:
each CAM cell includes at least a first cell transistor of the first conductivity type coupled between the match line and the electrically isolatable line;
a charge circuit that includes at least a first charge transistor of the first conductivity type having a source-drain path coupled to the match line; and
a discharge circuit that includes at least a first discharge transistor having a source-drain path coupled between the electrically isolatable line and a reference supply node.
20. The sense amplifier circuit of claim 18 , further including:
each CAM cell includes at least a first cell transistor of the first conductivity type coupled between the match line and the electrically isolatable line;
a charge circuit that includes at least a first charge transistor of the first conductivity type having a source-drain path coupled to the electrically isolatable line; and
a current mirror circuit having a first leg coupled to the charge circuit and a second leg coupled to the match line.