Semiconductor device, fabrication method therefor, and film fabrication method
The present invention provides a semiconductor device, a fabrication method therefor, and a film fabrication method, the semiconductor device including a first substrate (e.g., a semiconductor chip), an anisotropic conductive film that is provided on the first substrate and has a wiring pattern having at least a portion providing conduction through the anisotropic conductive film, and a second substrate (semiconductor chip) provided on the anisotropic conductive film and coupled to the first substrate via the portion providing conduction through the anisotropic conductive film. According to the present invention, it is possible to provide a semiconductor device, a fabrication method therefor, and a film fabrication method, by which production costs can be reduced in electrically coupling different positions in upper and lower substrates.
1. A semiconductor device comprising;
a first substrate having a first via hole;
an anisotropic conductive film provided on the first substrate;
a second substrate having a second via hole provided on the anisotropic conductive film; and
a wiring pattern formed in the anisotropic conductive film for providing a conduction of the first via hole of the first substrate and the second via hole of the second substrate, the wiring pattern formed in a region of the anisotropic conductive film exposed to a laser beam.
2. The semiconductor device as claimed in claim 1 , wherein at least one of the first substrate and the second substrate has a metal protruding portion and is connected to the anisotropic conductive film via the metal protruding portion.
3. The semiconductor device as claimed in claim 2 , wherein the metal protruding portion mainly includes any one of gold, copper, nickel and solder.
4. The semiconductor device as claimed in claim 1 , further comprising an insulating film provided between the anisotropic conductive film and at least one of the first substrate and second substrate.
5. The semiconductor device as claimed in claim 1 , further comprising a seal resin portion sealing at least one of the first substrate and the second substrate.
6. The semiconductor device as claimed in claim 1 , wherein at least one of the first substrate and second substrate include a semiconductor substrate.
7. The semiconductor device as claimed in claim 1 , wherein the anisotropic conductive film has an insulating substance including conductive particles, the conductive particles electrically coupled to each other in the wiring pattern.
8. The semiconductor device as claimed in claim 7 , wherein each of the conductive particles is an insulating particle covered with a metal film.
9. The semiconductor device as claimed in claim 8 , wherein the insulating particle includes any one of polyimide resin, epoxy resin, silicon resin, and polyethylene terephthalate resin.
10. The semiconductor device as claimed in claim 7 , wherein each of the conductive particles is a metal particle covered with a metal film.
11. The semiconductor device as claimed in claim 10 , wherein the metal particle includes copper, and the metal film includes solder.
12. The semiconductor device of claim 1 , wherein the wiring pattern is formed only on a top surface or a bottom surface of the anisotropic conductive film.
13. A method of fabricating a semiconductor device comprising:
forming, on a first substrate having a first via hole, an anisotropic conductive film;
forming, on the anisotropic conductive film, a second substrate having a second via hole;
forming a wiring pattern in the anisotropic conductive film to provide a conduction of the first via hole of the first substrate and the second via hole of the second substrate; and
exposing a region of the anisotropic conductive film to a laser beam so that the wiring pattern is formed in the region of the anisotropic conductive film exposed to the laser beam.
14. The method as claimed in claim 13 , wherein the anisotropic conductive film has an insulating substance including conductive particles; and wherein the forming the wiring pattern includes electrically coupling the conductive particles to each other by exposing the conductive particles to the laser beam.
15. The method of fabricating a semiconductor device of claim 13 , wherein the wiring pattern is formed on a top surface of the anisotropic conductive film by setting the focus of the laser beam to the top surface of the anisotropic conductive film.
16. The method of fabricating a semiconductor device of claim 13 , wherein the wiring pattern is formed on a bottom surface of the anisotropic conductive film by setting the focus of the laser beam to the bottom surface of the anisotropic conductive film.
17. The method of fabricating a semiconductor device of claim 13 , wherein the wiring pattern is formed in the anisotropic conductive film by setting the focus of the laser beam to the center of the anisotropic conductive film.
18. A wireless communications device, said wireless communications device comprising:
a flash memory comprising:
a first substrate;
an anisotropic conductive film provided on the first substrate;
a second substrate having a second via hole provided on the anisotropic conductive film; and
a wiring pattern for providing a conduction of the first via hole of the first substrate and the second via hole of the second substrate, the wiring pattern formed in a region of the anisotropic conductive film exposed to a laser beam;
a processor;
a communications component;
a transmitter circuit;
a receiver circuit; and
an antenna connected to the transmitter circuit and the receiver circuit.
19. The wireless communications device of claim 18 , wherein said flash memory is NAND flash memory.
20. The wireless communications device of claim 18 , wherein said flash memory is NOR flash memory.
21. The wireless communications device of claim 18 , wherein said flash memory utilizes mirrorbits technology.
22. A computing device comprising:
a processor:
an input component;
an output component;
a memory comprising:
a volatile memory; and
a flash memory comprising:
a first substrate having a first via hole;
an anisotropic conductive film provided on the first substrate;
a second substrate having a second via hole provided on the anisotropic conductive film; and
a wiring pattern for providing a conduction of the first via hole of the first substrate and the second via hole of the second substrate, the wiring pattern formed in a region of the anisotropic conductive film exposed to a laser beam.
23. The computing device of claim 22 , wherein said computing device is a personal computer (PC).
24. The computing device of claim 22 , wherein said computing device is a personal digital assistant (PDA).
25. The computing device of claim 22 , wherein said computing device is a gaming system.
26. A portable media player comprising:
a processor:
a cache;
a user input component;
a coder-decoder component: and
a memory comprising:
a flash memory comprising:
a first substrate having a first via hole;
an anisotropic conductive film provided on the first substrate;
a second substrate having a second via hole provided on the anisotropic conductive film; and
a wiring pattern for providing a conduction of the first via hole of the first substrate and the second via hole of the second substrate, the wiring pattern formed in a region of the anisotropic conductive film exposed to a laser beam.
27. The portable media player of claim 26 , wherein said portable media player is a portable music player.
28. The portable media player of claim 26 , wherein said portable media player is a portable video player.
29. A semiconductor device comprising:
a first substrate having a first via hole;
an anisotropic conductive film provided on the first substrate;
a second substrate having a second via hole provided on the anisotropic conductive film, the second via hole misaligned with the first via hole; and
a wiring pattern for providing a conduction of the first via hole of the first substrate and the second via hole of the second substrate, the wiring pattern formed in a region of the anisotropic conductive film exposed to a laser beam.