Adhesive Sheet,Semiconductor Device,and Process for Producing Semiconductor Device
In the polishing head of a CMP device, the diaphragm which includes an elastic body film is fixed to a carrier plate with the diaphragm stop ring which includes a metallic material. The screw stop of the retaining ring which includes a resin material is done to this diaphragm stop ring with a screw from a lower part. A groove is formed in the under surface of a retaining ring, and the screw hole for doing the screw stop of the retaining ring is formed in the groove. By pressurizing the space sealed by a diaphragm, membrane, etc., a semiconductor wafer is pushed against a polishing pad via membrane, and CMP treatment of the semiconductor wafer is done.
1 . A fabrication method of a semiconductor device, comprising a step of:
doing Chemical Mechanical Polishing of a semiconductor wafer where the semiconductor wafer is held in a wafer holding part with a retaining ring which did a screw stop to the wafer holding part from a lower part, and which includes a resin material;
wherein a groove is formed in an under surface of the retaining ring, and a retaining ring with which a screw hole deeper than a depth of the groove is formed in the groove portion in order to do a screw stop of the retaining ring is used.
2 . A fabrication method of a semiconductor device according to claim 1 , wherein
the groove is formed in a direction which inclines to a normal line direction of a periphery or an inner circumference of the retaining ring.
3 . A fabrication method of a semiconductor device according to claim 1 , wherein
the screw hole is formed in a peripheral part side of the retaining ring rather than a central part of the groove.
4 . A fabrication method of a semiconductor device according to claim 1 , wherein
the screw hole has a first hole for accommodating a head of a screw for doing a screw stop of the retaining ring, and a second hole which is formed in a bottom of the first hole, and whose screw thread is formed in a side wall, and depth of the first hole is larger than height of the head of the screw.
5 . A fabrication method of a semiconductor device according to claim 4 , wherein
the groove is formed so that the groove may pass through the first hole of the screw hole.
6 . A fabrication method of a semiconductor device, comprising a step of:
using a grinding apparatus of single wafer processing provided with a plurality of turn tables, a wafer holding part holding a semiconductor wafer moving the turn tables one by one, and performing Chemical Mechanical Polishing processing of a semiconductor wafer where the semiconductor wafer is held in the wafer holding part with a retaining ring which did a screw stop to the wafer holding part from a lower part, which includes a resin material, and with which a groove is formed in an under surface of the resin material, and a screw hole deeper than a depth of the groove is formed in the groove portion in order to do a screw stop of the resin material to the wafer holding part.
7 . A fabrication method of a semiconductor device according to claim 6 , wherein
a cleaning treatment of the semiconductor wafer is consistently performed after the Chemical Mechanical Polishing processing.
8 . A fabrication method of a semiconductor device, comprising a step of:
doing Chemical Mechanical Polishing of a semiconductor wafer where the semiconductor wafer is held in a wafer holding part with a retaining ring which did a screw stop to the wafer holding part from a lower part, and which includes a resin material;
wherein a diaphragm is fixed to the wafer holding part by a diaphragm holddown member, and a screw stop of the retaining ring is done to an under surface of the diaphragm holddown member from a lower part.
9 . A fabrication method of a semiconductor device according to claim 8 , wherein
the diaphragm holddown member has an annular form.
10 . A fabrication method of a semiconductor device according to claim 8 , wherein
the semiconductor wafer is pushed against a polishing pad by pressurizing a space sealed with the diaphragm.
11 . A fabrication method of a semiconductor device according to claim 8 , wherein
the diaphragm holddown member includes a metallic material.
12 . A fabrication method of a semiconductor device according to claim 8 , wherein
the diaphragm holddown member includes stainless steel.
13 . A fabrication method of a semiconductor device according to claim 8 , wherein
the diaphragm includes an elastic membrane.
14 . A fabrication method of a semiconductor device according to claim 8 , wherein
a groove is formed in an under surface of the retaining ring, and a screw hole for doing a screw stop of the retaining ring is formed in the groove.
15 . A fabrication method of a semiconductor device, comprising a step of:
doing Chemical Mechanical Polishing of a semiconductor wafer where the semiconductor wafer is held in a wafer holding part with a retaining ring which did a screw stop to the wafer holding part from a lower part, and which includes a resin material;
wherein an elastic membrane is fixed to the wafer holding part by an annular metal member, and a screw stop of the retaining ring is done to an under surface of the metal member from a lower part.
16 . A fabrication method of a semiconductor device according to claim 15 , wherein
the semiconductor wafer is pushed against a polishing pad by pressurizing a space sealed by the elastic membrane.
17 . A fabrication method of a semiconductor device according to claim 15 , wherein
a groove is formed in an under surface of the retaining ring, and in the groove a screw hole deeper than a depth of the groove is formed at the groove portion in order to do a screw stop of the resin material to the wafer holding part.