IP Library Granted Patent US 7,902,086
Granted Patent B2
US 7,902,086 · App. 11/608,388 · Granted Mar 8, 2011

Prevention of oxidation of carrier ions to improve memory retention properties of polymer memory cell

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 7,902,086
App. No.
11/608,388
Granted
Mar 8, 2011
Kind
B2
Abstract

Improving memory retention properties of a polymer memory cell are disclosed. The methods include providing a semiconducting polymer layer containing at least one organic semiconductor and at least one of a carrier ion oxidation preventer and an electrode oxidation preventer. The oxidation preventers may contain at least one of 1) an oxygen scavenger, 2) a polymer with oxidizable side-chain groups which can be preferentially oxidized over the carrier ions/electrodes, and 3) an oxidizable molecule that can be preferentially oxidized over the carrier ions/electrodes.

Claims (29)

1. A method for improving memory retention of a polymer memory cell comprising:

providing a first electrode on a substrate and optionally forming a passive layer over the first electrode;

forming a semiconducting polymer layer over the first electrode or the passive layer if present, the semiconducting polymer layer comprising a semiconducting polymer and at least one of 1) a carrier ion oxidation preventer and 2) an electrode oxidation preventer; and

providing a second electrode over the semiconducting polymer layer,

wherein the carrier ion/electrode oxidation preventer is one or more selected from a metal complex exhibiting oxygen scavenging activity, a Group IA element, an oxygen scavenger that is an organic compound, an oxygen scavenger that is an inorganic compound, an oxidizable compound, and an oxidizable polymer;

wherein the semiconducting polymer is one or more selected from conjugated organic polymers, organometallic polymers, carbon nanotubes, and carbon buckyballs; and

wherein the carrier ion/electrode oxidation preventer is present in an amount to react with oxygen or oxygen radicals to prevent or delay oxidation of carrier ions or carrier charges.

2. The method of claim 1 , wherein the semiconducting polymer layer comprises from about 0.001 to about 1% by weight of the carrier ion oxidation preventer and from about 99.9 to about 99% by weight of the semiconducting polymer.

3. The method of claim 1 , wherein the carrier ion/electrode oxidation preventer comprises at least one oxygen scavenger.

4. The method of claim 1 , wherein the carrier ion/electrode oxidation preventer comprises lithium metal.

5. The method of claim 4 , wherein the lithium metal is incorporated into the semiconducting polymer layer using at least one of implantation and diffusion.

6. The method of claim 4 , wherein the semiconducting polymer layer comprises from about 0.001 to about 10% by weight of the lithium metal and from about 99.999 to about 90% by weight of the semiconducting polymer.

7. The method of claim 1 , wherein the carrier ion/electrode oxidation preventer comprises nanoparticles of lithium metal.

8. The method of claim 7 , wherein the nanoparticles of lithium metal have a diameter size from about 1 nm to about 500 nm.

9. The method of claim 1 , wherein the carrier ion/electrode oxidation preventer is selected from the group consisting of hydrazine, hydroxylamine, sodium azide, sodium sulfite, polyterpenes, ascorbic acid, and polycarboxylic acid.

10. The method of claim 1 , wherein the oxidizable compound comprises at least one of sulfur dioxide, sodium sulfite, sodium metabisulfite, anhydrous sodium bisulfite, potassium metabisulfite, anhydrous potassium bisulfite, lithium aluminum hydride, sodium borohydride, and diborane.

11. The method of claim 1 , wherein the oxidizable compound comprises at least one selected from the group consisting of oxidizable polymers containing aliphatic unsaturated hydrocarbons and polymers with oxidizable side-chain groups, wherein the oxidizable side-chain groups are one or more selected from the group consisting of esters, carboxylic acids, aldehydes, ethers, ketones, alcohols, peroxides, and hydroperoxides.

12. The method of claim 11 , wherein the oxidizable polymer is incorporated into the semiconducting polymer layer using at least one of co-polymerization, implantation and diffusion.

13. A method for improving memory retention of a polymer memory cell comprising:

providing a first electrode on a substrate and optionally forming a passive layer over the first electrode;

forming a semiconducting polymer layer over the first electrode or the passive layer if present, the semiconducting polymer layer comprising a semiconducting polymer and at least one of 1) a carrier ion oxidation preventer and 2) an electrode oxidation preventer; and

providing a second electrode over the semiconducting polymer layer,

wherein the semiconducting polymer comprises one or more selected from the group consisting of conjugated organic polymers, organometallic polymers, carbon nanotubes, and carbon buckyballs.

14. The method of claim 13 , wherein the semiconducting polymer is a conjugated organic polymer selected from one of the group consisting of poly(p-phenylene vinylene); polyporphyrins; porphyrinic macrocycles, thiol-derivatized polyporphyrins; polymetallocenes such as polyferrocenes, polyphthalocyanines; polyvinylenes; polystiroles; polyacetylene; polydiphenylacetylene; poly(t_butyl)diphenylacetylene; poly(trifluoromethyl)diphenylacetylene; polybis(trifluoromethyl)acetylene; polybis(t-butyldiphenyl)acetylene; poly(trimethylsilyl)diphenylacetylene; poly(carbazole)diphenylacetylene; polydiacetylene; polyphenylacetylene; polypyridineacetylene; polymethoxyphenylacetylene; polymethylphenylacetylene; poly(t-butyl)phenylacetylene; polynitro-phenylacetylene; poly(trifluoromethyl)phenylacetylene; poly(trimethylsilyl)pheylacetylene; polydipyrrylmethane; polyindoqiunone; polydihydroxyindole; polytrihydroxyindole; furane-polydihydroxyindole; polyindoqiunone-2-carboxyl; polyindoqiunone; polybenzobisthiazole; poly(p-phenylene sulfide); polyaniline; polythiophene; polypyrrole; polysilane; polystyrene; polyfuran; polyindole; polyazulene; polyphenylene; polypyridine; polybipyridine; polyphthalocyanine; polysexithiofene; poly(siliconoxohemiporphyrazine); poly(germaniumoxohemiporphyrazine); poly(ethylenedioxythiophene); polymetallocene complexes of Fe, V, Cr, Co, or Ni; and polypyridine metal complexes or Ru and Os.

15. The method of claim 13 , wherein the carrier ion/electrode oxidation preventer comprises lithium metal.

16. The method of claim 13 , wherein the carrier ion/electrode oxidation preventer comprises nanoparticles of lithium having a diameter size from about 1 nm to about 500 nm.

17. The method of claim 13 , wherein the carrier ion/electrode oxidation preventer is selected from the group consisting of hydrazine, hydroxylamine, sodium azide, sodium sulfite, polyterpenes, ascorbic acid, and polycarboxylic acid.

18. The method of claim 13 , wherein the carrier ion/electrode oxidation preventer comprises an oxidizable compound selected from at least one of the group consisting of sulfur dioxide, sodium sulfite, sodium metabisulfite, anhydrous sodium bisulfite, potassium metabisulfite, anhydrous potassium bisulfite, lithium aluminum hydride, sodium borohydride, and diborane.

19. The method of claim 13 , wherein the carrier ion/electrode oxidation preventer comprises at least one selected from the group consisting of oxidizable polymers containing aliphatic unsaturated hydrocarbons and polymers with oxidizable side-chain groups, wherein the oxidizable side-chain groups are one or more selected from the group consisting of esters, carboxylic acids, aldehydes, ethers, ketones, alcohols, peroxides, and hydroperoxides.

Assignments (8)
CORRECTIVE ASSIGNMENT TO CORRECT THE 8647899 PREVIOUSLY RECORDED ON REEL 035240 FRAME 0429. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY INTERST. Recorded Nov 3, 2020
From: CYPRESS SEMICONDUCTOR CORPORATION; SPANSION LLC
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 058002/0470 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 14, 2016
From: CYPRESS SEMICONDUCTOR CORPORATION
To: MONTEREY RESEARCH, LLC
Reel/Frame 040911/0238 →
PARTIAL RELEASE OF SECURITY INTEREST IN PATENTS Recorded Aug 11, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
To: CYPRESS SEMICONDUCTOR CORPORATION; SPANSION LLC
Reel/Frame 039708/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 2, 2015
From: SPANSION, LLC
To: CYPRESS SEMICONDUCTOR CORPORATION
Reel/Frame 036050/0174 →
SECURITY INTEREST Recorded Mar 21, 2015
From: CYPRESS SEMICONDUCTOR CORPORATION; SPANSION LLC
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 035240/0429 →
RELEASE OF SECURITY INTEREST Recorded Mar 13, 2015
From: BARCLAYS BANK PLC
To: SPANSION LLC; SPANSION INC.; SPANSION TECHNOLOGY LLC
Reel/Frame 035201/0159 →
SECURITY AGREEMENT Recorded Jun 4, 2010
From: SPANSION LLC; SPANSION INC.; SPANSION TECHNOLOGY INC.; SPANSION TECHNOLOGY LLC
To: BARCLAYS BANK PLC
Reel/Frame 024522/0338 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 8, 2006
From: KAZA, SWAROOP; GAUN, DAVID; VAN BUSKIRK, MICHAEL A.
To: SPANSION LLC
Reel/Frame 018603/0540 →