Semiconductor manufacturing apparatus and control system and control method therefor
View Patent ↗Disclosed herein is technology for, among other things, a semiconductor manufacturing apparatus, and a control system and a control method therefor, by which a target parameter that is measured from a wafer processed with a plurality of processing parameters that are processing conditions of the semiconductor manufacturing apparatus to process a wafer, a multiple classification analysis is performed with the plurality of processing parameters and the target parameter to calculate a model formula expressing the target parameter in a selected parameter, a predicted value of the target parameter of the wafer being processed by use of the model formula is calculated, while the processing is being performed, the processing parameters of the processing is modified on the basis of the predicted value, and the processing is continuously performed.
1. A method of controlling a semiconductor manufacturing apparatus comprising:
obtaining a plurality of processing parameters for processing a wafer, wherein the processing parameters comprise processing conditions of the semiconductor manufacturing apparatus;
obtaining a target parameter that is measured from the wafer processed with the plurality of processing parameters;
calculating a model formula, comprising:
calculating a multicollinearity of first parameters that are the plurality of processing parameters to set to second parameters, the first parameters except a parameter having more than a given value of the multicollinearity;
calculating correlation coefficients between the second parameters and the target parameter to set to a third parameter, a given number of the second parameters in descending order of the correlation coefficients;
calculating partial correlation coefficients between the third parameter and the second parameters to set to a fourth parameter, a given number of the second parameters in descending order of the partial correlation coefficients; and
performing a multiple regression analysis between the third parameter and the fourth parameter and the target parameter to calculate the model formula expressing the target parameter in the third parameter and the fourth parameter;
obtaining the selected parameter of a processing while the processing is being performed by the semiconductor manufacturing apparatus;
calculating a predicted value of the target parameter of the wafer being processed by use of the model formula and the selected parameter, while the processing is being performed;
calculating a value to be modified of a modification parameter, the modification parameter being one or more of the plurality of processing parameters of the processing being performed by the semiconductor manufacturing apparatus on the basis of the predicted value, while the processing is being performed; and
performing the processing continuously by use of the value to be modified of the modification parameter.
2. The method as claimed in claim 1 , wherein calculating the value to be modified of the modification parameter includes calculating the value to be modified of the modification parameter so that the predicted value is equal to a target value of the target parameter.
3. The method as claimed in claim 1 , wherein calculating the value to be modified of the modification parameter includes calculating the value to be modified of the modification parameter so that the predicted value is equal to a target value of the target parameter in a case where the predicted value lies outside a give range.
4. The method as claimed in claim 1 , further comprising:
obtaining the target parameter from the wafer processed by performing the processing continuously; and
calculating the model formula after the target parameter is obtained.
5. The method as claimed in claim 1 , wherein the modification parameter is a time to perform the processing.
6. The method as claimed in claim 1 , wherein the target parameter is a yield of semiconductor devices formed in the wafer.
7. A controlling system of a semiconductor manufacturing apparatus comprising:
a processing portion for processing a wafer;
a first parameter obtaining portion operable to obtain a plurality of processing parameters that are processing parameters of the processing portion in processing the wafer;
a target parameter obtaining portion operable to obtain a target parameter that is measured from the wafer processed with the plurality of processing parameters;
a model formula calculating portion operable to calculate a model formula, the model formula calculating portion comprising:
a multicollinearity calculating portion for calculating a multicollinearity of first parameters that are the plurality of processing parameters to set to second parameters, the first parameters except a parameter having more than a given value of the multicollinearity;
a correlation coefficient calculating portion for calculating correlation coefficients between the second parameters and the target parameter to set to a third parameter, a given number of the second parameters in descending order of the correlation coefficients, the correlation coefficient calculating portion also for calculating partial correlation coefficients between the third parameter and the second parameters to set to a fourth parameter, a given number of the second parameters in descending order of the partial correlation coefficients; and
a multiple regression analysis portion for performing a multiple regression analysis between the third parameter and the fourth parameter and the target parameter to calculate the model formula expressing the target parameter in the third parameter and the fourth parameter;
a second parameter obtaining portion operable to obtain the selected parameter by the processing portion, while a processing is being performed by the processing portion;
a predicted value calculating portion operable to calculate a predicted value of the target parameter of the wafer being processed with the model formula and the selected parameter, while the processing is being performed; and
a modification parameter calculating portion operable to calculate a value to be modified of a modification parameter based on the predicted value, the modification parameter being one or more of the plurality of processing parameters of the processing being performed by the processing portion, while the processing is being performed, wherein the processing portion performs the processing continuously by use of the value to be modified of the modification parameter.
8. The controlling system as claimed in claim 7 wherein the modification parameter calculating portion is operable to calculate the value to be modified of the modification parameter so that the predicted value is equal to a target value of the target parameter.
9. The controlling system as claimed in claim 7 wherein the modification parameter calculating portion is operable to calculate the value to be modified of the modification parameter so that the predicted value is equal to a target value of the target parameter in a case where the predicted value lies outside a given range.
10. The controlling system as claimed in claim 7 wherein the target parameter obtaining portion is operable to obtain the target parameter while the processing is being continuously performed, and wherein further the model formula calculating portion is operable to calculate the model formula after the target parameter is obtained.
11. The controlling system as claimed in claim 7 , wherein the modification parameter is a time to perform the processing.
12. The controlling system as claimed in claim 7 , wherein the target parameter is a yield of semiconductor devices formed in the wafer.
13. A semiconductor manufacturing apparatus comprising:
a processing portion for processing a wafer;
a selected parameter obtaining portion operable to obtain a selected parameter, which is one or more of a plurality of processing parameters that are processing conditions of the processing portion, while a processing is being performed by the processing portion;
a predicted value calculating portion operable to calculate a predicted value of a target parameter of the wafer being processed with a model formula and the selected parameter, wherein the model formula is calculated by a model formula calculating portion comprising:
a multicollinearity calculating portion for calculating a multicollinearity of first parameters that are the plurality of processing parameters to set to second parameters, the first parameters except a parameter having more than a given value of the multicollinearity;
a correlation coefficient calculating portion for calculating correlation coefficients between the second parameters and the target parameter to set to a third parameter, a given number of the second parameters in descending order of the correlation coefficients, the correlation coefficient calculating portion also for calculating partial correlation coefficients between the third parameter and the second parameters to set to a fourth parameter, a given number of the second parameters in descending order of the partial correlation coefficients; and
a multiple regression analysis portion for performing a multiple regression analysis between the third parameter and the fourth parameter and the target parameter to calculate the model formula expressing the target parameter in the third parameter and the fourth parameter; and
a modification parameter calculating portion operable to calculate a value to be modified of a modification parameter on the basis of the predicted value, the modification parameter being one or more of the plurality of processing parameters of the processing being performed by the processing portion, while the processing is being performed, wherein the processing portion performs the processing continuously by use of the value to be modified of the modification parameter.
14. The semiconductor manufacturing apparatus as claimed in claim 13 wherein the modification parameter calculating portion is operable to calculate the value to be modified of the modification parameter so that the predicted value is equal to a target value of the target parameter.
15. The semiconductor manufacturing apparatus as claimed in claim 13 wherein the modification parameter calculating portion is operable to calculate the value to be modified of the modification parameter so that the predicted value is equal to a target value of the target parameter in a case where the predicted value lies outside a given range.
16. The semiconductor manufacturing apparatus as claimed in claim 13 wherein the modification parameter is a time to perform the processing.
17. The semiconductor manufacturing apparatus as claimed in claim 13 wherein the target parameter is a yield of semiconductor devices formed in the wafer.
18. A method of controlling a semiconductor manufacturing apparatus comprising:
calculating a multicollinearity of first parameters that are processing conditions to process a wafer by use of the semiconductor manufacturing apparatus to set to second parameters, the first parameters except a parameter having more than a given value of the multicollinearity;
calculating correlation coefficients between the second parameters and a target parameter that is measured from the wafer processed with the first parameters by use of the semiconductor manufacturing apparatus to set to a third parameter, a given number of the second parameters in descending order of the correlation coefficients;
calculating partial correlation coefficients between the third parameter and the second parameters to set to a fourth parameter, a given number of the second parameters in descending order of the partial correlation coefficients; and
performing a multiple regression analysis between the third parameter and the fourth parameter and the target parameter to calculate the model formula expressing the target parameter in the third parameter and the fourth parameter, wherein the model formula is used in controlling the semiconductor manufacturing apparatus.