Electronic device comprising non volatile memory cells with optimized programming and corresponding programming method
View Patent ↗A device with non volatile memory cells, with optimized programming, of the type comprising a sector of matrix memory cells organized in rows and columns, with the columns organized in a plurality of global bit-lines associated with at least one plurality of local bit-lines and respectively enabled by a first select signal and by at least one second select signal generated by a decoder, these columns being associated with at least one Program Load PL controlled by a logic circuit and suitable for applying a programming pulse to a plurality of cells belonging to the enabled bit lines, comprising a plurality of discharge transistors, each associated with a corresponding column controlled by a control signal complementary to the control signal of the adjacent discharge transistor.
1. An electronic device with non volatile memory cells, with optimized programming, of the type comprising at least one sector of matrix memory cells organized in rows and columns, the columns being organized in a plurality of global bit-lines associated with at least one plurality of local bit-lines and enabled respectively by a first select signal and by at least one second select signal generated by a decoder, the columns being associated with at least one Program Load PL controlled by a logic circuit and suitable for applying a programming pulse at a plurality of cells belonging to the enabled bit lines, further comprising a plurality of discharge transistors, each associated with a corresponding column and controlled by a control signal complementary to the control signal of the adjacent discharge transistor; and a column decoding which provides to enable the global bit lines with a number p of bits which address the first select signals and to enable the local bit lines with a number q of bits addressing the second select signals, one bit of the p bits and of the q bits is shared and suitable for activating the control signals.
2. The electronic device of claim 1 wherein the discharge transistors are inserted between the global bit-lines and a ground reference and are alternatively controlled by a first control signal or by a second control signal complementary to each other.
3. The electronic device of claim 2 wherein each of the global bit-lines is associated with a respective group of the local bit-lines, a set of local bit lines comprising a local bit line for each group and being enabled by a same second select signal.
4. The electronic device of claim 3 wherein the decoder enables sequentially the global bit lines simultaneously with a deactivation of the corresponding control signal, the decoder activating one of the second select signals enabling one of the local bit lines belonging to each of the sets.
5. The electronic device of claim 4 wherein the enabling of one global bit line and the deactivation of a control signal occurs for a time suitable for allowing a programming of a cell prefixed in the active local bit line.
6. The electronic device of claim 5 wherein simultaneously with a switch of the first select signal there occurs a switch of the control signals enabling the just programmed local bit line for a discharge and enabling a local bit line enabled by a corresponding second select signal for a programming.
7. The electronic device of claim 6 wherein subsequently a complete switch of the first select signal there is a switch of the second select signal enabling a corresponding set of local bit lines for the programming.
8. The electronic device of claim 1 wherein the first select signal generated by the decoder activates a respective first enable transistor connected between a corresponding global bit-line and a control line shared by the global bit-lines.
9. The electronic device of claim 1 wherein the second select signal activates a second enable transistor connected between a local bit-line and a corresponding global bit-line.
10. The electronic device of claim 2 wherein a group of a defined number of the consecutive local bit-lines are comb-shape associated with pairs of global bit-lines, the local bit-lines of the groups being enabled by the second select signals.
11. The electronic device of claim 10 wherein the global bit lines are divided into first and second consecutive global bit lines, with the first global bit lines alternated to the second global bit lines and that the local bit lines respectively associated with the first and second global bit lines are enabled by the second select signals, respectively even or odd.
12. The electronic device of claim 11 wherein the second select signals, even or odd, are controlled separately simultaneously enabling local bit lines respectively associated with the first or second global bit lines.
13. The electronic device of claim 12 wherein the second select signals, even or odd, define corresponding sets of simultaneously active local bit lines, even or odd.
14. The electronic device of claim 13 wherein each second select signal, even or odd, is activated during a complete switch of the first select signals and that the second select signals are sequentially enabled but offset by a period equal to four switches of the first select signals.
15. The electronic device of claim 14 wherein control signals switch with a frequency equal to four first select signals consecutively alternating a programming of a set of the local bit lines, even or odd, and a simultaneous discharge of another set of the just programmed local bit lines, odd or even.
16. The electronic device of claim 1 wherein the shared bit allows to discriminate the second select signals, the even ones from the odd ones.
17. The electronic device of claim 10 wherein the global bit lines are arranged in sequence, sequentially activated by the first select signals and that the local bit lines associated with pairs of consecutive global bit lines are enabled by the second select signals, even or odd.
18. The electronic device of claim 17 wherein the second even select signals are controlled separately with respect to the odd ones activating them in pairs sequentially offset by a switch of the first select signal maintaining them active for a complete cycle of successive switches.
19. The electronic device of claim 18 wherein the control signals switch for each switch of the first select signal.
20. The electronic device of claim 19 wherein for each switch cycle of the first select signals two sets of consecutive local bit lines are enabled and programmed, one with even local bit lines and the other with odd ones and simultaneously a discharge of each of the local bit lines subsequently the programming.
21. A memory architecture comprising a plurality of electronic devices with non volatile memory cells comprising a circuit structure for a programming of two or more of the electronic devices in parallel wherein each of the electronic devices comprising at least one sector of matrix memory cells organized in rows and columns, the columns being organized in a plurality of global bit-lines associated with at least one plurality of local bit-lines and enabled respectively by a first select signal and by at least one second select signal generated by a decoder, the columns being associated with at least one Program Load PL controlled by a logic circuit and suitable for applying a programming pulse at a plurality of cells belonging to the enabled bit lines, the electronic devices further comprising a plurality of discharge transistors, each associated with a corresponding column and controlled by a control signal complementary to the control signal of the adjacent discharge transistor; wherein the electronic devices further have a column decoding which provides to enable the global bit lines with a number p of bits which address the first select signals and to enable the local bit lines with a number q of bits addressing the second select signals, one bit of the p bits and of the q bits is shared and suitable for activating the control signals.
22. The memory architecture of claim 21 wherein the discharge transistors of the electronic devices are inserted between the global bit-lines and a ground reference and are alternatively controlled by a first control signal or by a second control signal complementary to each other.
23. The memory architecture of claim 22 wherein each of the global bit-lines is associated with a respective group of the local bit-lines, a set of local bit lines comprising a local bit line for each group and being enabled by a same second select signal.
24. The electronic device of claim 22 wherein a group of a defined number of the consecutive local bit-lines are comb-shape associated with pairs of global bit-lines, the local bit-lines of the groups being enabled by the second select signals.
25. The memory architecture of claim 24 wherein the global bit lines are divided into first and second consecutive global bit lines, with the first global bit lines alternated to the second global bit lines and that the local bit lines respectively associated with the first and second global bit lines are enabled by the second select signals, respectively even or odd.
26. The memory architecture of claim 25 wherein the second select signals, even or odd, are controlled separately simultaneously enabling local bit lines respectively associated with the first or second global bit lines.
27. The memory architecture of claim 26 wherein the second select signals, even or odd, define corresponding sets of simultaneously active local bit lines, even or odd.
28. The memory architecture of claim 25 wherein the global bit lines are arranged in sequence, sequentially activated by the first select signals and that the local bit lines associated with pairs of consecutive global bit lines are enabled by the second select signals, even or odd.
29. The memory architecture of claim 28 wherein the second even select signals are controlled separately with respect to the odd ones activating them in pairs sequentially offset by a switch of the first select signal maintaining them active for a complete cycle of successive switches.
30. A method for programming an electronic device with non volatile memory cells of the type comprising at least one sector of matrix memory cells organized into rows and columns, the columns being organized in a plurality of global bit-lines associated with at least one plurality of local bit-lines and respectively enabled by a first select signal and by at least one second select signal generated by a decoder, the columns being further associated with at least one Program Load PL controlled by a logic circuit and suitable for applying a programming pulse to a plurality of cells belonging to the enabled bit lines, the method comprising an alternated repetition of programming steps and of verify steps wherein:
each global bit line comprises a discharge transistor interposed between each global bit line and a controlled ground reference controlled by a control signal complementary to the control signal of the adjacent discharge transistor, the control signals being complementary to each other;
the programming step comprising:
a first select step which provides to enable the second select signal by enabling presetting local bit lines to sequentially enable the global bit-lines by means of the activation of corresponding first select signals generated by the decoder;
a second step which provides a switch of a control signal to deactivate the discharge transistor associated with the global bit line enabled by activating a discharge transistor connected to a global bit line associated with a just programmed local bit line,
the second step also comprising a pulse programming of an enabled cell belonging to the local bit line enabled by the second select signal and associated with the enabled global bit line.
31. The method of claim 30 wherein each of the global bit lines is associated with a group of local bit lines and the method further comprises at each switch of the first select signal a programming of a local bit line of the group.
32. The method of claim 31 wherein the control signal switches at each switch of the first select signal allowing the programming of each of the local bit lines associated with the enabled global bit line and discharging the local bit line associated with the previously programmed global bit line.
33. The method of claim 30 wherein a group of a defined number of the consecutive local bit-lines are comb-shape associated with pairs of the global bit-lines which are in turn divided into first and second bit lines alternatively arranged, the method further comprising a step of enabling the local bit lines associated with the first even global bit lines by means of the second even select signals, and the local bit lines associated with the second odd global bit lines by second odd select signals, the second select signals, even and odd, being separately controlled.
34. The method of claim 33 wherein at each complete switch of the first select signal a programming of two of the local bit lines is provided, an even one and an odd one, of each group associated with the pairs of global bit lines.
35. The method of claim 34 further comprising, for each complete switch of the first select signals, a double switch of the control signals, comprising, for each switch, a simultaneous discharge of the local bit lines activated by a same second select signal.
36. The method of claim 30 wherein the global bit lines are arranged in sequence and sequentially activated by the first select signals and that each group of a presetting number of local bit lines are comb-shape associated with the consecutive global bit lines alternatively activated by second select signals, even and odd, the method further comprising a switching step of the control signals at each switch of the first select signal discharging, at each switch, one bit line just programmed.