Semiconductir device and programming method
The present invention provides a semiconductor device and a control method thereof, the semiconductor device including: a bit line connected to a memory cell; a voltage control circuit controlling a voltage supplied from a voltage source to the bit line; a differential amplifier circuit providing the control voltage to the voltage control circuit in response to a voltage at a node coupled to the bit line and a reference voltage; and a current source providing a current to the differential amplifier circuit. The current source provides more current to the differential amplifier circuit in the first period including a period for precharging than in the second period after precharging.
1. A semiconductor device comprising:
a bit line connected to a memory cell;
a voltage control circuit coupled to the bit line and controlling a voltage supplied from a voltage source to the bit line in response to a control voltage;
a differential amplifier circuit coupled to the voltage control circuit and providing the control voltage thereto in response to a voltage associated with the bit line and a reference voltage; and
a current source providing a current to the differential amplifier circuit,
wherein the current source provides a first current to the differential amplifier circuit during a first period including a period for precharging the bit line, and provides a second current to the differential amplifier circuit during a second period including a period for reading data from the memory cell after precharging the bit line, the first current being larger than the second current.
2. The semiconductor device as claimed in claim 1 ,
wherein the voltage control circuit is a field effect transistor (FET); and
wherein the control voltage is provided to a gate of the FET.
3. The semiconductor device as claimed in claim 1 ,
wherein the current source includes a pair of sub-current sources;
wherein the pair of sub-current sources provide the current to the differential amplifier circuit during the first period, and
wherein one of the pair of sub-current sources provides the current to the differential amplifier circuit during the second period.
4. The semiconductor device as claimed in claim 3 , wherein the pair of sub-current sources are a pair of transistors.
5. The semiconductor device as claimed in claim 1 , wherein the differential amplifier circuit is a current mirror type differential amplifier circuit.
6. The semiconductor device as claimed in claim 1 , wherein the memory cell is a nonvolatile memory cell.
7. The semiconductor device as claimed in claim 6 , wherein the memory cell is a virtual ground type memory cell.
8. A method for controlling a semiconductor device comprising a bit line connected to a memory cell, a voltage control circuit controlling a voltage supplied from a voltage source to the bit line in response to a control voltage, and a differential amplifier circuit providing the control voltage to the voltage control circuit in response to a voltage associated with the bit line and a reference voltage, and a memory cell array having nonvolatile memory cells, the method comprising:
providing a first current to the differential amplifier circuit during a first period including a period for precharging the bit line; and
providing a second current smaller than the first current, to the differential amplifier circuit during a second period including a period for reading data from the memory cell after precharging the bit line.
9. The method as claimed in claim 8 ,
wherein providing the first current to the differential amplifier circuit during the first period includes providing the first current to the differential amplifier circuit from a pair of sub-current sources, and
wherein providing the second current to the differential amplifier circuit during the second period includes providing the second current to the differential amplifier circuit from one of the pair of sub-current sources.
10. The method as claimed in claim 9 , wherein the pair of sub-current sources are a pair of transistors.
11. A wireless communications device, comprising:
a processor;
a communications component;
a transmitter;
a receiver;
an antenna connected to the transmitter circuit and the receiver circuit; and
a memory comprising:
a bit line connected to a memory cell;
a voltage control circuit coupled to the bit line and controlling a voltage supplied from a voltage source to the bit line in response to a control voltage;
a differential amplifier circuit coupled to the voltage control circuit and providing the control voltage thereto in response to a voltage associated with the bit line and a reference voltage; and
a current source providing a current to the differential amplifier circuit,
wherein the current source provides a first current to the differential amplifier circuit during a first period including a period for precharging the bit line, and provides a second current to the differential amplifier circuit during a second period including a period for reading data from the memory cell after precharging the bit line, the first current being larger than the second current.
12. The wireless communications device of claim 11 , wherein said flash memory is NAND flash memory.
13. The wireless communications device of claim 11 , wherein said flash memory is NOR flash memory.
14. The wireless communications device of claim 11 , wherein said flash memory comprises at least one memory cell operable to store more than one bit.
15. A computing device comprising:
a processor;
an input component;
an output component;
a memory comprising:
a bit line connected to a memory cell;
a voltage control circuit coupled to the bit line and controlling a voltage supplied from a voltage source to the bit line in response to a control voltage;
a differential amplifier circuit coupled to the voltage control circuit and providing the control voltage thereto in response to a voltage associated with the bit line and a reference voltage; and
a current source providing a current to the differential amplifier circuit,
wherein the current source provides a first current to the differential amplifier circuit during a first period including a period for precharging the bit line, and provides a second current to the differential amplifier circuit during a second period including a period for reading data from the memory cell after precharging the bit line, the first current being larger than the second current.
16. The computing device of claim 15 , wherein said computing device is a personal computer (PC).
17. The computing device of claim 15 , wherein said computing device is a personal digital assistant (PDA).
18. The computing device of claim 15 , wherein said computing device is a gaming system.
19. A portable media player comprising:
a processor;
a cache;
a user input component;
a coder-decoder component; and
a memory comprising:
a bit line connected to a memory cell;
a voltage control circuit coupled to the bit line and controlling a voltage supplied from a voltage source to the bit line in response to a control voltage;
a differential amplifier circuit coupled to the voltage control circuit and providing the control voltage thereto in response to a voltage associated with the bit line and a reference voltage; and
a current source providing a current to the differential amplifier circuit,
wherein the current source provides a first current to the differential amplifier circuit during a first period including a period for precharging the bit line, and provides a second current to the differential amplifier circuit during a second period including a period for reading data from the memory cell after precharging the bit line, the first current being larger than the second current.
20. The portable media player of claim 19 , wherein said portable media player is a portable music player.
21. The portable media player of claim 19 , wherein said portable media player is a portable video player.