MUGFET with optimized fill structures
View Patent ↗A semiconductor structure includes active multi-gate fin-type field effect transistor (MUGFET) structures and inactive MUGFET fill structures between the active MUGFET structures. The active MUGFET structures comprise transistors that change conductivity depending upon voltages within gates of the active MUGFET structures. Conversely, the inactive MUGFET fill structures comprise passive devices that do not change conductivity irrespective of voltages within gates of the inactive MUGFET fill structures. The gates of the active MUGFET structures are parallel to the gates of the inactive MUGFET fill structures, and the fins of the active MUGFET structures are the same size as the fins of the inactive MUGFET fill structures. The active MUGFET structures have the same pitch as the gates of the inactive MUGFET fill structures. The gates of the active MUGFET structures comprise active doping agents, but the inactive MUGFET fill structures do not contain the active doping agents.
1. A semiconductor structure comprising:
active multi-gate fin-type field effect transistor (MUGFET) structures; and
inactive MUGFET fill structures between said active MUGFET structures,
wherein said gates of said active MUGFET structures are parallel to said gates of said inactive MUGFET fill structures, and
wherein said gates of said active MUGFET structures have a same pitch as said gates of said inactive MUGFET fill structures.
2. A semiconductor structure comprising:
active multi-gate fin-type field effect transistor (MUGFET) structures; and
inactive MUGFET fill structures between said active MUGFET structures,
wherein said gates of said active MUGFET structures have a same pitch as said gates of said inactive MUGFET fill structures,
wherein said gates of said active MUGFET structures are parallel to said gates of said inactive MUGFET fill structures, and
wherein fins of said active MUGFET structures are a same size as fins of said inactive MUGFET fill structures.