Phase change memory structures
View Patent ↗A phase change memory cell has a first electrode, a plurality of pillars, and a second electrode. The plurality of pillars are electrically coupled with the first electrode. Each of the pillars comprises a phase change material portion and a heater material portion. The second electrode is electrically coupled to each of the pillars. In some examples, the pillars have a width less than 20 nanometers.
1. A method of forming a phase change memory cell, comprising:
forming a first electrode layer over a substrate;
forming a plurality of pillars electrically coupled to and over the first electrode layer, wherein each of the plurality of pillars including a phase change material portion and a heater material portion; and
forming a second electrode electrically coupled to each of the plurality of pillars.
2. The method of claim 1 , wherein the step of forming the plurality of pillars is further characterized by the phase change material portion being over the heater material portion.
3. The method of claim 1 , wherein the step of forming the plurality of pillars is further characterized by the phase change material portions comprising at least one of a group consisting of germanium, antimony, and tellurium.
4. The method of claim 1 , wherein the step of forming the plurality of pillars is further characterized by:
forming layer of heater material over the first electrode layer;
forming a layer of phase change material over the layer of heater material;
etching through the layer of phase change material; and
etching at least partially through the layer of heater material.
5. The method of claim 1 , wherein the step of forming the plurality of pillars is further characterized by:
forming layer of heater material over the first electrode layer;
forming a layer of phase change material over the first electrode layer;
providing nanoclusters over the layer of heater material and over the layer of phase change material, wherein the nanoclusters define a pattern;
etching through the layer of phase change material as per the pattern; and
etching at least partially through the layer of heater material as per the pattern.
6. The method of claim 1 further comprising:
forming a layer of heater material, wherein the heater material portion of each pillar of the plurality of pillars is formed from the layer of heater material,
forming a layer of phase change material wherein the phase change material portion of each of the plurality of pillars is formed from the layer of phase change material;
providing nanoclusters over the layer of heater material and over the layer of phase change material, wherein the nanoclusters define a pattern;
wherein a location of the plurality of pillars is defined as per the pattern.
7. The method of claim 1 , wherein the step of forming the plurality of pillars is further characterized by the plurality of pillars each having a width of less than 20 nanometers.
8. The method of claim 1 , wherein the step of forming the plurality of pillars is further characterized by the plurality of pillars having a spacing of less than 20 nanometers.
9. The method of claim 1 , further comprising forming an insulating material surrounding each of the plurality of pillars.
10. The method of claim 1 , wherein the step of forming the plurality of pillars is further characterized by the phase change material portions comprising a combination including a first material and a second material, wherein:
the first material is one of a class group consisting of a group IB material, a group III material, a group IV material, a group V material, and a group VI material;
the second material is one of the class group but not a same group of the class group as the first material.
11. The method of claim 1 , wherein the step of forming the plurality of pillars is further characterized by the heater material portions including at least one of a group consisting of titanium, aluminum, nitrogen, silicon, tantalum, and tungsten.