Nonvolatile memory array architecture
An apparatus comprising a two or three dimensional array of a plurality of pairs of non-volatile memory (“NVM”) cells coupled to enable program and erase of the NVM cells. The plurality of pairs of NVM cells is electrically connected to word lines and bit lines. Each pair of NVM cells comprises a first memory cell and a second memory cell. The first and second memory cells comprise a first source/drain, a second source/drain, and a control gate. The first source/drain of the first memory cell is connected to one of the bit lines. The second source/drain of the first memory cell is connected to the first source/drain of the second memory cell. The second source/drain of the second memory cell is connected to another one of the bit lines. The control gates of the first and second memory cells are connected to different word lines.
1. An apparatus comprising:
a two dimensional array of a plurality of pairs of non-volatile memory (“NVM”) cells coupled to enable Fowler-Nordhiem (“FN”) tunneling program and erase of the NVM cells; wherein the plurality of pairs of NVM cells are electrically connected to word lines and bit lines; wherein the plurality of pairs of NVM cells are arranged into x columns and y rows; wherein each NVM cell of the plurality of pairs of NVM cells comprises a control gate; and wherein the control gate of at least one NVM cell of each pair of NVM cells of a y row is electrically connected to the control gate of an NVM cell of each pair of NVM cells of an adjacent y row.
2. The apparatus of claim 1 , wherein each pair of NVM cells comprises a first memory cell and a second memory cell.
3. The apparatus of claim 2 , wherein the first and second memory cells comprise a first source/drain, a second source/drain, and a control gate.
4. The apparatus of claim 3 , wherein the first source/drain of the first memory cell of each pair of NVM cells is electrically connected to one of the bit lines.
5. The apparatus of claim 4 , wherein the second source/drain of the first memory cell of each pair of NVM cells is electrically connected to the first source/drain of the second memory cell of the pair of NVM cells.
6. The apparatus of claim 5 , wherein the second source/drain of the second memory cell of each pair of NVM cells is electrically connected to another one of the bit lines.
7. The apparatus of claim 6 , wherein the control gate of the first memory cell of each pair of NVM cells is electrically connected to one of the word lines.
8. The apparatus of claim 7 , wherein the control gate of the second memory cell of each pair of NVM cells is electrically connected to another one of the word lines.
9. The apparatus of claim 8 , wherein the control gate of the first memory cell of each pair of NVM cells of each y row is electrically connected to a first word line, and wherein the control gate of the second memory cell of the pair of NVM cells of the y row is electrically connected to a second word line.
10. The apparatus of claim 9 , wherein the first source/drain of the first memory cell of each pair of NVM cells of each x column is electrically connected to a first bit line of a pair of bit lines, and wherein the second source/drain of the second memory cell of the pair of NVM cells of the x column is electrically connected to a second bit line of the pair of bit lines.
11. The apparatus of claim 1 , wherein the first and second memory cells of each pair of NVM cells comprise a NOR flash memory.
12. The apparatus of claim 11 , wherein the first and second memory cells of each pair of NVM cells comprise at least one of a single level memory cell or multilevel memory cell.
13. A semiconductor device comprising the apparatus of claim 1 .
14. An apparatus comprising:
a two dimensional array of a plurality of pairs of non-volatile memory (“NVM”) cells coupled to enable Fowler-Nordhiem (“FN”) tunneling program and FN tunneling erase of the NVM cells; wherein the plurality of pairs of NVM cells are electrically connected to word lines and bit lines; wherein the two dimensional array comprises x columns and y rows; wherein each of the plurality of pairs of NVM cells comprises a first memory cell and a second memory cell; wherein the first and second memory cells comprise a first source/drain, a second source/drain, and a control gate; and wherein the second source/drain of the second memory cell of each pair of NVM cells of at least one x column is electrically connected to the first source/drain of the first memory cell of each pair of NVM cells of an adjacent x column.
15. The apparatus of claim 14 , wherein a control gate of at least one memory cell of each pair of NVM cells of a y row is electrically connected to a word line that is adjacent to an other word line, and wherein the other word line is electrically connected to a control gate of a memory cell of each pair of NVM cells of an adjacent y row.
16. The apparatus of claim 14 , wherein the control gate of the first memory cell of each pair of NVM cells of each y row is electrically connected to a first word line of a pair of word lines, and wherein the control gate of the second memory cell of the pair of NVM cells of the y row is electrically connected to a second word line of the pair of word lines.
17. The apparatus of claim 14 , wherein the first and second memory cells of each pair of NVM cells comprise a NOR flash memory.
18. The apparatus of claim 17 , wherein the first and second memory cells of each pair of NVM cells comprise at least one of a single level memory cell or multilevel memory cell.
19. A semiconductor device comprising the apparatus of claim 14 .