Granted Patent B1

US 7,482,217 · App. 11/949,637 · Granted Jan 27, 2009

Abstract

Claims (39)

1. A method of forming an electronic device comprising:

selectively implanting ions into a workpiece, wherein

ions are implanted into a first region of the workpiece, wherein the first region includes a semiconductor material; and

substantially none of the ions are implanted into a second region of the workpiece, wherein the second region includes the semiconductor material;

depositing a metal-containing film over the first region and the second region, wherein depositing is performed after selectively implanting;

reacting the metal-containing film with the semiconductor material to form a first metal-semiconductor film within the first region and a second metal-semiconductor film within the second region, wherein:

the first metal-semiconductor film has a first thickness; and

the second metal-semiconductor film has a second thickness that is different from the first thickness.

2. The method of claim 1 , wherein selectively implanting ions comprises implanting nitrogen ions within a memory cell within the first region and substantially no nitrogen ions within a peripheral component within the second region.

3. The method of claim 2 , wherein the memory cell comprises a non-volatile memory cell and the peripheral component comprises a transistor in a logic circuit.

4. The method of claim 1 , wherein selectively implanting ions comprises implanting ions having an energy of not greater than approximately 20 KeV.

5. The method of claim 1 , wherein selectively implanting ions comprises providing a dosage of ions of at least approximately 1×10 14 ions/cm 2 .

6. The method of claim 1 , wherein the metal-containing film comprises a refractory metal.

7. The method of claim 6 , wherein depositing a metal-containing film comprises depositing a cobalt film having an averaged thickness of at least approximately 5 nm.

8. The method of claim 1 , wherein selectively implanting ions into a workpiece further comprises:

forming a photoresist mask over the workpiece,

exposing a portion of the photoresist mask within the first region to radiation; and

removing the photoresist mask from the first region.

9. The method of claim 1 , wherein the first thickness is thicker than the second thickness.

10. The method of claim 1 , wherein selectively implanting ions includes causing implant damage within the semiconductor material within the first region.

11. The method of claim 10 , wherein:

depositing a metal-containing film further includes depositing the metal-containing film while a significant portion of the implant damage within the first region remains unrepaired; and

reacting comprises consuming a significant portion of the implant damage within the first region.

12. The method of claim 11 , wherein reacting is performed at a temperature for a time period of not greater than approximately 2 minutes.

13. The method of claim 11 , wherein reacting is performed in an atmosphere comprising a noble gas, nitrogen, or a combination thereof.

14. The method of claim 11 , further comprising removing unreacted portions of the metal-containing film from the first region and the second region after consuming the implant damage.

15. The method of claim 11 , further comprising heating the workpiece to change a crystalline phase of the first metal-semiconductor film and the second metal-semiconductor film after consuming the implant damage.

16. The method of claim 1 , wherein the first metal-semiconductor film has an averaged thickness that is significantly less than an averaged thickness of the second metal-semiconductor film.

17. The method of claim 1 , wherein the first metal-semiconductor film comprises CoSi 2 , the second metal-semiconductor film comprises CoSi 2 , and the first metal-semiconductor film and the second metal-semiconductor film are portions of gate electrodes.

18. The method of claim 17 , wherein the first metal-semiconductor film overlies a first arsenic-doped source/drain region and the second metal-semiconductor film overlies a second arsenic-doped source/drain region.

19. A method of forming an electronic device comprising:

selectively implanting ions into a workpiece, wherein:

nitrogen-containing ions are implanted into a first region comprising a memory cell; and

substantially none of the nitrogen-containing ions are implanted into a second region comprising a peripheral logic component;

depositing a cobalt-containing film over the workpiece;

annealing the workpiece at an annealing temperature of at least approximately 400° C. to form a first metal-semiconductor film on a portion of the memory cell and a second metal-semiconductor film on a portion of the peripheral logic component;

removing unreacted portions of the metal-containing film from portions of the memory cell and portions of the peripheral logic component; and

annealing the workpiece to change a crystalline phase of the first metal-semiconductor film and the second metal-semiconductor film, wherein the first metal-semiconductor film has an averaged thickness that is significantly thinner than an averaged thickness of the second metal-semiconductor film.

20. The method of claim 19 , wherein the averaged thickness of the first metal-semiconductor film is at least approximately 11 nm thinner than the averaged thickness of the second metal-semiconductor film.

Assignments (8)