Granted Patent B2

US 7,790,497 · App. 12/004,124 · Granted Sep 7, 2010

Abstract

Claims (23)

1. A method of fabricating an electronic device comprising:

providing a first body;

reacting a portion of the first body with an agent;

providing a second body on the reacted portion of the first body; and

reacting the entire second body with an agent wherein the first body is Ni and the second body is Cu.

2. A method of fabricating an electronic device comprising:

providing a first body;

oxidizing a portion of the first body;

providing a second body on the oxidized portion of the first body; and

oxidizing the entire second body wherein the first body is Ni and the second body is Cu.

3. The method of claim 2 wherein the first body is a metal body.

4. The method of claim 2 wherein the second body is a metal body.

5. A method of fabricating a resistive memory device comprising:

providing a first electrode;

reacting a portion of the first electrode with an agent;

providing a metal body on the reacted portion of the first electrode;

reacting the entire metal body with an agent; and

providing a second electrode on the reacted metal body wherein the first electrode is Ni and the metal body is Cu.

6. The method of claim 5 wherein the first electrode is metal.

7. The method of claim 6 wherein the agent with which the portion of the first electrode reacts is an oxidizing agent.

8. The method of claim 6 wherein the agent with which the metal body reacts is an oxidizing agent.

9. The method of claim 5 and further comprising the device incorporated in a system.

10. The method of claim 9 wherein the system is selected from the group consisting of a hand-held device, a vehicle, and a computer.

Assignments (8)