Heat dissipation for integrated circuit
View Patent ↗A packaged integrated circuit having a thermal pathway to exhaust heat from the integrated circuit. The integrated circuit is disposed on a package substrate, with an encapsulant disposed around the integrated circuit. A heat sink is disposed at least partially within the encapsulant, with at least a portion of one surface of the heat sink exposed outside of the encapsulant. The integrated circuit has an uppermost passivation layer, where the passivation layer is not electrically conductive, with a port disposed in the passivation layer. The port extends completely through the passivation layer to expose an underlying layer. A thermal pathway is disposed at least partially within the port, and makes thermal contact to both the underlying layer and the heat sink. The thermal transfer rate of the thermal pathway is greater than the thermal transfer rate either the passivation layer or the encapsulant.
1. A packaged integrated circuit, having:
an integrated circuit disposed on a package substrate,
an encapsulant disposed around the integrated circuit, the encapsulant having a first thermal transfer rate,
a heat sink disposed at least partially within the encapsulant and having at least a portion of one surface of the heat sink exposed outside of the encapsulant, the heat sink having a second thermal transfer rate,
the integrated circuit having an uppermost passivation layer that does not extend off of the integrated circuit, where the passivation layer is not electrically conductive and has a third thermal transfer rate, the passivation layer having a port disposed therein, the port extending completely through the passivation layer to expose an underlying layer through the passivation layer, and
a thermal pathway disposed at least partially within the port, the thermal pathway making thermal contact to both the underlying layer and the heat sink, the thermal pathway having a fourth thermal transfer rate, where the fourth thermal transfer rate is greater than either of the first thermal transfer rate and the third thermal transfer rate.
2. The packaged integrated circuit of claim 1 , wherein the second thermal transfer rate is substantially equal to the fourth thermal transfer rate.
3. The packaged integrated circuit of claim 1 , wherein the underlying layer is a metal layer.
4. The packaged integrated circuit of claim 1 , wherein the underlying layer is a metal layer that makes direct contact with a dummy metal structure that extends at least to an upper semiconducting surface of the integrated circuit.
5. The packaged integrated circuit of claim 1 , wherein the passivation layer has a plurality of ports and the thermal pathway is disposed within each of the ports.
6. The packaged integrated circuit of claim 1 , wherein all of the thermal pathway is formed of a homogeneous material.
7. The packaged integrated circuit of claim 1 , wherein portions of the thermal pathway are formed of different materials.
8. The packaged integrated circuit of claim 1 , wherein the thermal pathway is formed of a metal.
9. The packaged integrated circuit of claim 1 , wherein a portion of the thermal pathway is formed of a thermally conductive compound.
10. The packaged integrated circuit of claim 1 , wherein the thermal pathway extends above a topmost surface of the passivation layer.
11. The packaged integrated circuit of claim 1 , wherein the thermal pathway has a topmost surface that is at a same height as a topmost surface of the passivation layer.
12. The packaged integrated circuit of claim 1 , wherein the integrated circuit is a flip chip.
13. The packaged integrated circuit of claim 1 , wherein the integrated circuit is wire bond chip.
14. The packaged integrated circuit of claim 1 , wherein the encapsulant is a ceramic lid.
15. The packaged integrated circuit of claim 1 , wherein the encapsulant is an epoxy.
16. The packaged integrated circuit of claim 1 , wherein the package substrate is a ceramic piece.
17. The packaged integrated circuit of claim 1 , wherein the package substrate is a built-up circuit board.
18. The packaged integrated circuit of claim 1 , wherein the heat sink is formed of a metal.
19. The packaged integrated circuit of claim 1 , wherein the heat sink is formed of copper.
20. The packaged integrated circuit of claim 1 , wherein at least portions of the heat sink are formed of a first material and at least portions of the thermal pathway are also formed of the first material.