Multiple derating factor sets for delay calculation and library generation in multi-corner STA sign-off flow
An apparatus and method to characterize a new process using an improved delay calculation. Multiple derating factors are used for different STA sign off corners that have a base corner with two pairs of off-corners. The approach of the present invention does not add any extra work in cell library characterization, while in the mean it increases the accuracy of the delay calculation and the library generation at corners other than standard corners.
1. Computer executable program code embodied in a non-transitory computer usable medium for configuring a processor to compute the delay of an integrated circuit (IC), said computer executable code comprising:
a base corner module for characterizing libraries, for an IC being constructed, about three base corner points comprising BC PVT, NOM PVT and WC PVT;
an off-corner module for calculating K factors for four off-corner points to the base corner points; and,
a delay computing module for calculating delay for the off-corner points using the K factors;
wherein:
the delay of the IC is calculated using the off-corner point K factors; and
the off-corner points comprise:
for base corner BC PVT (best case for P, best case V and best case T):
Off-corner point A: BC PV+WCT (best case P, best case V and worse case T)
Off-corner point B: BC PV+BCT+ΔT (best case P, best case V and best case T plus a perturbation in temperature, ΔT)
Off-corner point C: BC PT+WCV (best case P, best case T and worse case V)
Off-corner point D: BC PT+BCV+ΔV (best case P, best case T and best case V plus a perturbation in voltage, ΔV); and,
for the NOM PVT (Nominal P, nominal V and nominal T) base corner:
Off-corner point A 2 : NOM PV+WCT (nominal P, nominal V and worse case T)
Off-corner point B 2 : NOM PV+BCT+ΔT (nominal P, nominal V and best case T plus a perturbation temperature, ΔT)
Off-corner point C 2 : NOM PT+WCV (nominal P, nominal T and worse case V)
Off-corner point D 2 : NOM PT+BCV+ΔV (nominal P, nominal T and best case V plus a perturbation voltage, ΔV); and,
for the WC PVT (Worse case P, worse case V and worse case T) base corner:
Off-corner point A 3 : WC PV+WCT+ΔT (worse case P, V and worse case T plus a perturbation temperature, ΔT)
Off-corner point B 3 : WC PV+BCT (worse case P, worse case V and best case T)
Off-corner point C 3 : WC PT+WCV+ΔV (worse case P, worse case T and worse case V plus a perturbation voltage, ΔV)
Off-corner point D 3 : WC PT+BCV (worse case P, worse case T and best case V).
2. The invention according to claim 1 , wherein:
the base corner module characterizes libraries about base corner points from a limited set of base corner library points from a set of all possible library points; and
an off-corner characterization module for characterizing libraries, for the IC being constructed, about the off-corner points to the base corner points.
3. The invention according to claim 2 , wherein:
each of the base corner points have at least two off-corner points;
the base corner points and off-corner points of the base corner points have parameters from a particular process node and parameters of voltage and temperature.
4. The invention according to claim 3 , wherein:
each of the base corner points are associated with at least four off-corner points comprising two sets of near and far off-corner points.
5. The invention according to claim 4 , wherein:
one near point of each base corner point comprises a parameter of a best case temperature, and one far point of each base corner point comprises a parameter of a worse case temperature, with the near point temperature parameter being a temperature closer to the temperature of the base corner point than the far point temperature parameter; and
one near point of each base corner point comprising a parameter of a normal supply voltage for the IC being constructed plus an increment above the normal supply voltage, and a far point of each base corner point comprising a parameter of a normal supply voltage for the IC being constructed plus an increment below the normal supply voltage.
6. The invention according to claim 5 , further comprising:
a module for building libraries at the plurality of off-corner points using the K factors, and using the near point, best case temperature and near point, best case voltage for each near off-corner point.
7. The invention according to claim 6 , wherein:
the delay computing module computing delay for the IC according to the K factors for at least one of the near point temperature and voltage parameters.
8. The invention according to claim 7 , wherein:
the base corner module characterizes the delay in the IC and the delay computing module computes the delay for the IC where the delay comprises propagation delay and output slew rates; and,
the process node is 90 nm, the best case temperature ranges from −40 C to 35 C, while the near point voltage varying from zero to +10% above the normal supply voltage.
9. The invention according to claim 1 , further comprising:
a module for building libraries at the plurality of off-corners using the K factors, and the near point temperature and best case voltage for each of:
points B, D for the base corner BC PVT;
points B 2 , D 2 for the base corner NOM PVT; and
points B 3 , D 3 for the base corner WC PVT; and,
a delay computing module computing delay for the IC according to the K factors for the near points B, D; B 2 , D 2 and A 3 , C 3 .
10. A method for computing the delay in an integrated circuit (IC), executed by a processor, comprising the steps of:
characterizing the IC about three base corner points BC PVT, NOM PVT and WC PVT;
characterizing the IC about four off-corner points associated with the each of the base corner points;
calculating K factors for the off-corner points to the base corner points;
calculating a delay for the IC according to the K factors calculated for each of the off-corner points,
building libraries for the IC at each of the off-corner points;
wherein:
delay is calculated using the K factors for each of the off-corner points; and
the near and far off-corner points comprise, for each of the base corner points:
for base corner BC PVT (best case for P, best case V and best case T):
Off-corner point A: BC PV+WCT (best case P, best case V and worse case T)
Off-corner point B: BC PV+BCT+ΔT (best case P, best case V and best case T plus a perturbation in temperature, ΔT)
Off-corner point C: BC PT+WCV (best case P, best case T and worse case V)
Off-corner point D: BC PT+BCV+ΔV (best case P, best case T and best case V plus a perturbation in voltage, ΔV); and,
for the NOM PVT (Nominal P, nominal V and nominal T) base corner:
Off-corner point A 2 : NOM PV+WCT (nominal P, nominal V and worse case T)
Off-corner point B 2 : NOM PV+BCT+ΔT (nominal P, nominal V and best case T plus a perturbation temperature, ΔT)
Off-corner point C 2 : NOM PT+WCV (nominal P, nominal T and worse case V)
Off-corner point D 2 : NOM PT+BCV+ΔV (nominal P, nominal T and best case V plus a perturbation voltage, ΔV); and,
for the WC PVT (Worse case P, worse case V and worse case T) base corner:
Off-corner point A 3 : WC PV+WCT+ΔT (worse case P, worse case V and worse case T plus a perturbation temperature, ΔT)
Off-corner point B 3 : WC PV+BCT (worse case P, worse case V and best case T)
Off-corner point C 3 : WC PT+WCV+ΔV (worse case P, worse case T and worse case V plus a perturbation voltage, ΔV)
Off-corner point D 3 : WC PT+BCV (worse case P, worse case T and best case V).
11. The method according to claim 10 , further comprising the steps of:
forming off-corner points to each of the base corner points, with each base corner point having at least one pair of off-corner points.
12. The method according to claim 11 , wherein:
each of the off-corner points to the base corner points and the base corner points have parameters from a particular process node and have parameters of temperature and voltage;
each of the base corner points have at least two off-corner points, the off-corner points having a near point temperature and a near point voltage;
the near point temperature of the off-corner points being a best case temperature parameter with respect to the temperature comprising the base corner temperature;
the near point voltage comprising a normal supply voltage for the IC plus an increment above the normal supply voltage.
13. The method according to claim 12 , further comprising the steps of:
building libraries for the IC at the plurality of off-corners using the K factors, the near point temperature and near point voltage.
14. The method according to claim 13 , further comprising the steps of:
computing delay for the IC according to the K factors for the near point temperature and near point voltage of the off-corners.
15. The method according to claim 14 , wherein:
the pair of off-corner points associated with each base corner point, comprise a near point and a far point, the far point comprising a far point temperature and a far point voltage;
the near point comprises a parameter of a best case temperature, and the far point comprises a parameter of a worse case temperature, with the near point temperature being a temperature closer to the temperature of the base corner point than the far point temperature of the base corner point;
each of the base corner points is further associated with an additional pair of off-corner points comprising a near point comprising a parameter of a normal supply voltage for the IC plus an increment above the normal supply voltage, and the far point comprising a parameter of a normal supply voltage for the IC plus an increment below the normal supply voltage.
16. The invention according to claim 10 , further comprising:
building libraries at the plurality of off-corners using the K factors, and the temperature and voltage for each off-corner of points B, D for the base corner BC PVT; points B 2 , D 2 for the base corner NOM PVT; and points A 3 , C 3 for the base corner WC PVT, and, computing the delay for the IC according to the K factors for the near points B, D; B 2 , D 2 and A 3 , C 3 .
17. Computer executable program code embodied in a non-transitory computer usable medium for configuring a processor to compute timing in an IC according to multiple derating factors for different sign off corners, said computer executable code comprising:
means for characterizing the IC about at three base corner points comprising BC PVT, NOM PVT and WC PVT;
means for characterizing the IC about four off-corner points associated with each of the base corner points;
means for calculating K factors for the off-corner points to the base corner point; and
means for calculating a delay for the IC according to the K factors calculated for each of the off-corner points,
means for building libraries for the IC at each of the off-corner points;
wherein:
delay is calculated using the K factors for each of the off-corner points;
the means for characterizing the IC about three base corner points characterizes libraries about base corner points from a limited set of base corner library points from the set of all possible library points;
the base corner points and off-corner points associated with the base corner points have parameters from a particular process node and parameters of voltage and temperature;
each of the base corner points are associated with exactly two pairs of off-corner points comprising near and far off-corner points;
the near points of the off-corner points having parameters of best case temperature, and the far points of the off-corner points having parameters of a worse case temperature, with the near point temperature of an off-corner being a temperature closer to the temperature of the base corner point related to the off-corner than the far point temperature;
the off-corner points further comprising a near point voltage comprising the normal supply voltage for the IC plus an increment above the normal supply voltage, and the far point voltage comprising the normal supply voltage for the IC being constructed plus an increment below the normal supply voltage;
the means for building libraries for the IC at each of the off-corner points uses the K factors, and uses the near point, best case temperature and near point, best case voltage for each off-corner when building libraries; and
the delay for the IC is calculated using the K factors for the off-corner points.