Optical erase memory structure
A method for providing an optical erase memory structure including: forming a metal-insulator-metal memory cell; positioning a light emitting diode adjacent to the metal-insulator-metal memory cell; and emitting a light emission from the light emitting diode for erasing the metal-insulator-metal memory cell.
1. A method for providing an optical erase memory structure including:
forming a metal-insulator-metal memory cell having spacers that are transparent;
positioning a light emitting diode adjacent to the metal-insulator-metal memory cell; and
emitting a light emission from the light emitting diode through the spacers for erasing the metal-insulator-metal memory cell.
2. The method as claimed in claim 1 further comprising providing a light transmissive layer between the light emitting diode and the metal-insulator-metal memory cell.
3. The method as claimed in claim 1 further comprising depositing a reflective layer over the light emitting diode for redirecting the light emission.
4. The method as claimed in claim 1 further comprising forming a light channeling structure adjacent to the metal-insulator-metal memory cell for routing the light emission.
5. The method as claimed in claim 1 further comprising:
providing an optical erase memory structure application including mounting the optical erase memory structure therein; and
transferring a data pattern from the optical erase memory structure application to the optical erase memory structure.
6. A method for providing an optical erase memory structure including:
forming a metal-insulator-metal memory cell having spacers that are transparent including providing a charge trap layer;
positioning a light emitting diode adjacent to the metal-insulator-metal memory cell; and
emitting a light emission from the light emitting diode through the spacers for erasing the metal-insulator-metal memory cell including dissipating a charge in the charge trap layer.
7. The method as claimed in claim 6 further comprising providing a light transmissive layer between the light emitting diode and the metal-insulator-metal memory cell including providing a clear epoxy layer, a silicon dioxide layer, or a polyimide layer.
8. The method as claimed in claim 6 further comprising depositing a reflective layer over the light emitting diode for redirecting the light emission including forming a light channeling interface.
9. The method as claimed in claim 6 further comprising forming a light channeling structure adjacent to the metal-insulator-metal memory cell for routing the light emission including erasing a metal-insulator-metal memory cell array segment.
10. The method as claimed in claim 6 wherein positioning the light emitting diode adjacent to the metal-insulator-metal memory cell includes providing a complete substrate having the light emitting diode or mounting a second substrate, having the light emitting diode, over a first substrate.
11. An optical erase memory structure including:
a metal-insulator-metal memory cell with spacers that are transparent;
a light emitting diode adjacent to the metal-insulator-metal memory cell; and
a light emission from the light emitting diode through the spacers for erasing the metal-insulator-metal memory cell.
12. The apparatus as claimed in claim 11 further comprising a light transmissive layer between the light emitting diode and the metal-insulator-metal memory cell.
13. The apparatus as claimed in claim 11 further comprising a reflective layer over the light emitting diode for redirecting the light emission.
14. The apparatus as claimed in claim 11 further comprising a light channeling structure adjacent to the metal-insulator-metal memory cell for routing the light emission.
15. The apparatus as claimed in claim 11 further comprising:
an optical erase memory structure application includes a camera with the optical erase memory structure mounted therein; and
a data pattern transferred from the optical erase memory structure application to the optical erase memory structure includes picture data transferred from the camera.
16. The apparatus as claimed in claim 11 further comprising:
a charge trap layer in the metal-insulator-metal memory cell; and
a charge dissipated from the charge trap layer by the light emission.
17. The apparatus as claimed in claim 16 further comprising a light transmissive layer between the light emitting diode and the metal-insulator-metal memory cell includes a clear epoxy layer, a silicon dioxide layer, or a polyimide layer.
18. The apparatus as claimed in claim 16 further comprising a reflective layer over the light emitting diode for redirecting the light emission by a light channeling interface.
19. The apparatus as claimed in claim 16 further comprising a light channeling structure adjacent to the metal-insulator-metal memory cell for routing the light emission includes a metal-insulator-metal memory cell array segment erased.
20. The apparatus as claimed in claim 16 wherein a light emitting diode adjacent to the metal-insulator-metal memory cell includes a complete substrate having the light emitting diode or a second substrate, having the light emitting diode, mounted over a first substrate.