Thermal monitoring and management of integrated circuits
The invention, in one aspect, provides a semiconductor device ( 100 ), including transistors ( 105 ), dielectric layers ( 115, 120 ) located over the transistors ( 105 ), interconnects ( 122 ) formed within the dielectric layers ( 115, 120 ), and a test structure ( 130 ) located adjacent a hot-spot ( 125 ) of the semiconductor device ( 100 ) and configured to monitor a real-time operational parameter of at least one of the transistors ( 105 ) or interconnects ( 122 ).
1. A semiconductor device, comprising:
transistors;
dielectric layers located over the transistors;
interconnects formed within the dielectric layers; and
a test structure located adjacent a hot-spot of the semiconductor device and configured to monitor a real-time operational parameter of at least one of the transistors or interconnects.
2. The device recited in claim 1 , wherein a location of the hot-spot is predetermined.
3. The device recited in claim 1 , wherein the test structure is located within the dielectric layers adjacent a localized area that includes one or more interconnect structures.
4. The device recited in claim 3 , wherein the localized area is defined by a perimeter and the test structure is located within the perimeter.
5. The device recited in claim 4 , wherein the test structure has a serpentine configuration, an inter-digitated comb configuration, multiple strips configuration, or T-shaped configuration.
6. The device recited in claim 1 , further including a logic circuit that is configured to receive and analyze signals from the test structure.
7. The device recited in claim 1 , wherein the device is connected to a logic circuit that is configured to receive and analyze signals from the test structure.
8. The device recited in claim 7 , wherein the test structure includes a logic circuit that is configured to output signals.
9. The device recited in claim 1 , wherein the test structure is a resistor, thermometer, diode, or reliability tester.
10. The device recited in claim 1 , wherein the operational parameter is resistance, frequency, or temperature.
11. A method of manufacturing an integrated circuit, comprising:
forming transistors over a semiconductor substrate;
forming dielectric layers over the transistors;
forming interconnects within the dielectric layers; and
placing at least one test structure within at least one of the dielectric layers and adjacent a hot-spot associated with an interconnect structure that is susceptible to high temperatures during real-time operation, the at least one test structure configured to monitor a temperature, frequency change, or resistance change of the interconnect structure.
12. The method recited in claim 11 , wherein placing the at least one test structure includes placing a test structure adjacent each of a plurality of the interconnect structures.
13. The method recited in claim 12 , wherein the hot-spot is within a localized area of the interconnect structure and placing includes placing the test structure within a perimeter of the localized area.
14. The method recited in claim 11 , wherein placing includes placing a test structure that has a serpentine configuration, an inter-digitated comb configuration, multiple strips configuration, or T-shaped configuration.
15. The method recited in claim 11 , further including connecting the test structure to a logic circuit that is configured to receive and analyze signals from the test structure.
16. The method recited in claim 11 , further including forming a logic circuit within the semiconductor device that is configured to receive and analyze signals from the test structure, the logic circuit being connectable to an external display device.
17. The method recited in claim 11 , wherein the test structure is a resistor, thermometer, diode, or reliability tester.
18. A method of monitoring an integrated circuit, comprising:
monitoring a test circuit located adjacent a hot-spot of the integrated circuit during real-time operation of the integrated circuit, the test circuit configured to produce a signal in response to a change in an operational parameter of at least one of a transistor or interconnect structure of the integrated circuit;
analyzing the signal to determine if a failure within the hot-spot has occurred or prospective failure will occur within a predetermined period of time; and
replacing the integrated circuit when the signal indicates the failure or prospective failure.
19. The method recited in claim 18 , wherein analyzing includes transmitting the signal from the test circuit to a logic circuit that is connected to a display.
20. The method recited in claim 18 , wherein analyzing includes analyzing a change in resistance, frequency, or a temperature of the hot-spot.