Device and process of forming device with device structure formed in trench and graphene layer formed thereover
View Patent ↗A graphene-based device is formed with a substrate having a trench therein, a device structure on the substrate and within the trench, a graphene layer over the device structure, and a protective layer over the graphene layer. Fabrication techniques include forming a trench in a substrate, forming a device structure within the trench, forming a graphene layer over the device structure, and forming a protective layer over the graphene layer.
1. A process comprising:
forming a trench in a substrate;
forming a device structure within the trench;
forming a graphene layer over the device structure; and
forming a protective layer over the graphene layer.
2. The process according to claim 1 , comprising forming the graphene layer by deposition.
3. The process according to claim 1 , comprising forming the graphene layer by growing the graphene layer on the device structure.
4. The process according to claim 1 , comprising forming the graphene layer by transferring a pre-formed layer of graphene onto the device structure.
5. The process according to claim 4 , comprising forming the pre-formed layer of graphene by mechanical exfoliation or chemical synthesis.
6. The process according to claim 1 , comprising forming the graphene layer by forming a layer of graphene material over the device structure, and aligning and patterning the layer of graphene material with the trench as a reference to form the graphene layer.
7. The process according to claim 1 , comprising forming the device structure within the trench by depositing material and patterning metal contacts for source/drain regions and a gate in the trench, providing a dielectric between the metal contacts for the source/drain regions and the gate, and providing the dielectric between the gate and the graphene layer formed over the device structure.
8. The process according to claim 1 , wherein the device structure is a field effect transistor.
9. The process according to claim 1 , comprising forming the device structure within the trench by depositing material and patterning metal contacts for source/drain regions and two adjacent gates in the trench, wherein the graphene layer formed over the device structure is electrically doped.
10. The process according to claim 1 , wherein the device structure is a p-n junction.
11. The process according to claim 1 , wherein the protective layer is formed over the entire graphene layer.
12. The process according to claim 11 , wherein the entire device structure is covered by the graphene layer and the protective layer.
13. The process according to claim 1 , further comprising:
forming an additional device structure over the graphene layer,
wherein the protective layer is formed over the graphene layer and the additional device structure.
14. A graphene-based device comprising:
a substrate having a trench formed therein;
a device structure formed on said substrate and within said trench;
a graphene layer formed over said device structure; and
a protective layer formed over said graphene layer.
15. The device according to claim 14 , wherein said device structure includes metal contacts for source/drain regions and a gate formed on said substrate in said trench, wherein said device structure further includes a dielectric provided between said metal contacts for said source/drain regions and said gate, and wherein said dielectric is provided between said gate and said graphene layer.
16. The device according to claim 14 , wherein said device structure is a field effect transistor.
17. The device according to claim 14 , wherein said device structure includes metal contacts for source/drain regions and two adjacent gates in said trench, and wherein said graphene layer formed over said device structure is electrically doped.
18. The device according to claim 14 , wherein said device structure is a p-n junction.
19. The device according to claim 14 , wherein said protective layer is formed over the entire graphene layer.
20. The device according to claim 19 , wherein the entire device structure is covered by said graphene layer and said protective layer.
21. The device according to claim 14 , wherein said graphene layer is aligned and patterned with said trench as a reference.
22. The device according to claim 1 , further comprising:
an additional device structure formed over said graphene layer,
wherein said protective layer is formed over said graphene layer and said additional device structure.