Test structures for development of metal-insulator-metal (MIM) devices

1. An electronic test structure comprising:

a substrate;

a transistor comprising first and second active regions in the substrate, and a gate;

a first conductor connected to the first active region;

a second conductor connected to the second active region;

an electronic device comprising a first electrode connected to the first conductor via a first intervening conductor that has parallel and equal length side and top surfaces and a plurality of other stacked and directly connected intervening conductors that have widths that are different from the width of the first intervening conductor and have non parallel and angled side surfaces, a second electrode, and an insulating layer between the first and second electrodes wherein the second conductor is exposed for access thereto.

2. The electronic test structure of claim 1 wherein at least one of the electrodes is metallic.

3. The electronic test structure of claim 2 wherein said at least one of the electrodes comprises at least one material selected from the group consisting of Ta, Ti, Ni, Cu, Co, Au, Ag, Pt, Pd, W, Cr, Ca and Al.

4. The electronic test structure of claim 1 wherein said at least one of the electrodes comprises at least one material selected from the group consisting of TaN, TIN, ITO, RuO2, and SrRuO3.

5. The electronic test structure of claim 4 wherein the insulating layer comprises at least one material selected from the group consisting of Cu oxide, Ta oxide, Ti oxide, W oxide, Ni oxide, Co oxide, and a polymer material.

6. The electronic test structure of claim 5 wherein the insulating layer is a doped layer.

7. The electronic test structure of claim 1 wherein at least one of the recited first and second electrodes are formed of a non-metallic material.