SONOS-NAND device having a storage region separated between cells
The present invention is a semiconductor device including a semiconductor substrate having a trench, a first insulating film provided on side surfaces of the trench, a second insulating film of a material different from the first insulating film provided to be embedded in the trench, a word line provided extending to intersect with the trench above the semiconductor substrate, a gate insulating film of a material different from the first insulating film separated in an extending direction of the word line by the trench and provided under a central area in a width direction of the word line, and a charge storage layer separated in the extending direction of the word line by the trench and provided under both ends in the width direction of the word line to enclose the gate insulating film, and a method for manufacturing the same.
1. A semiconductor device comprising:
a semiconductor substrate, the semiconductor substrate having a trench;
a first insulating film provided on a plurality of surfaces of the trench;
a second insulating film provided to be embedded in the trench;
a word line intersecting with the trench above the semiconductor substrate;
a gate insulating film separated from the word line by the trench and provided under a central area in a width direction of the word line on the semiconductor substrate; and
a charge storage layer separated in the direction of the word line by the trench and provided under the word line on the semiconductor substrate so as to enclose the gate insulating film.
2. The semiconductor device according to claim 1 , wherein the first insulating film is provided on a plurality of side surfaces of the trench.
3. The semiconductor device according to claim 1 , wherein the second insulating film is composed of a material different from that of the first insulating film
4. The semiconductor device according to claim 1 , wherein the gate insulating film is composed of a material different from that of the first insulating film
5. The semiconductor device according to claim 1 , wherein an upper surface of the first insulating film is provided below a lower surface of the charge storage layer.
6. The semiconductor device according to claim 1 , wherein an oxide film is provided on the first insulating film.
7. The semiconductor device according to claim 5 , wherein the charge storage layer is separated by the oxide film.
8. The semiconductor device according to claim 1 , wherein
an upper surface of the first insulating film is provided above an upper surface of the charge storage layer, and
the charge storage layer is separated by the first insulating film.
9. The semiconductor device according to claim 1 , wherein an upper surface of the second insulating film is provided above an upper surface of the charge storage layer.
10. The semiconductor device according to claim 1 , wherein
the charge storage layer is composed of a material different from that of the first insulating film.
11. A semiconductor device comprising:
a semiconductor substrate, the semiconductor substrate having a trench;
a first insulating film provided on a plurality of side surfaces of the trench;
a second insulating film provided to be embedded in the trench;
a word line intersecting with the trench above the semiconductor substrate;
a gate insulating film separated from the word line by the trench and provided under a central area in a width direction of the word line on the semiconductor substrate; and
a charge storage layer separated in the direction of the word line by the trench and provided under the word line on the semiconductor substrate so as to enclose the gate insulating film,
wherein the second insulating film is composed of a material different from that of the first insulating film, and
wherein the gate insulating film is composed of a material different from that of the first insulating film.