Carbon-based films, and methods of forming the same, having dielectric filler material and exhibiting reduced thermal resistance
View Patent ↗Methods in accordance with aspects of this invention form microelectronic structures in accordance with other aspects this invention, such as non-volatile memories, that include (1) a bottom electrode, (2) a resistivity-switchable layer disposed above and in contact with the bottom electrode, and (3) a top electrode disposed above and in contact with the resistivity-switchable layer; wherein the resistivity-switchable layer includes a carbon-based material and a dielectric filler material. Numerous additional aspects are provided.
1. A method of forming a microelectronic structure, the method comprising:
forming a resistivity-switchable layer on a bottom electrode; and
forming a top electrode above and in contact with the resistivity-switchable layer;
wherein the resistivity-switchable layer comprises a carbon-based material and a dielectric filler material, wherein the carbon-based material comprises carbon nanotubes.
2. The method of claim 1 , wherein the dielectric filler material comprises colloidal nanoparticles.
3. The method of claim 1 , wherein the dielectric filler material comprises a high thermal conductivity dielectric material having a coefficient of thermal conductivity of at least 15 W/mK.
4. The method of claim 1 , wherein the resistivity-switchable layer has a reduced thermal resistance of less than 2e7 K/W.
5. The method of claim 1 , wherein forming the resistivity-switchable layer comprises spinning a heterogeneous dispersion onto a substrate to create a thin film.
6. The method of claim 1 , wherein the dielectric filler material comprises stoichiometric or non-stoichiometric silicon nitride.
7. The method of claim 1 , wherein the dielectric filler material comprises stoichiometric or non-stoichiometric silicon oxynitride.
8. The method of claim 1 , wherein the dielectric filler material comprises stoichiometric or non-stoichiometric aluminum oxide.
9. The method of claim 1 , wherein the dielectric filler material comprises stoichiometric or non-stoichiometric silicon dioxide, tantalum oxide, or boron carbon nitride.
10. The method of claim 1 , wherein the top electrode does not penetrate through the resistivity-switchable layer.
11. The method of claim 1 , wherein the resistivity-switchable layer has a thickness of at most 300 angstroms.
12. The method of claim 1 , wherein the bottom electrode, the resistivity-switchable layer, and the top electrode comprise a metal-insulator-metal (MIM) stack comprising a memory cell.
13. A microelectronic structure comprising:
a bottom electrode;
a resistivity-switchable layer disposed above and in contact with the bottom electrode; and
a top electrode disposed above and in contact with the resistivity-switchable layer;
wherein the resistivity-switchable layer comprises a carbon-based material and a dielectric filler material, wherein the carbon-based material comprises carbon nanotubes.
14. The microelectronic structure of claim 13 , wherein the dielectric filler material comprises colloidal nanoparticles.
15. The microelectronic structure of claim 13 , wherein the dielectric filler material comprises a high thermal conductivity dielectric material having a coefficient of thermal conductivity of at least 15 W/mK.
16. The microelectronic structure of claim 13 , wherein the resistivity-switchable layer has a reduced thermal resistance of less than 2e7 K/W.
17. The microelectronic structure of claim 13 , wherein forming the resistivity-switchable layer comprises a thin film of a heterogeneous dispersion.
18. The microelectronic structure of claim 13 , wherein the dielectric filler material comprises stoichiometric or non-stoichiometric silicon nitride.
19. The microelectronic structure of claim 13 , wherein the dielectric filler material comprises stoichiometric or non-stoichiometric silicon oxynitride.
20. The microelectronic structure of claim 13 , wherein the dielectric filler material comprises stoichiometric or non-stoichiometric aluminum oxide.
21. The microelectronic structure of claim 13 , wherein the dielectric filler material comprises stoichiometric or non-stoichiometric silicon dioxide, tantalum oxide, or boron carbon nitride.
22. The microelectronic structure of claim 13 , wherein the top electrode does not penetrate through the resistivity-switchable layer.
23. The microelectronic structure of claim 13 , wherein the resistivity-switchable layer has a thickness of at most 300 angstroms.
24. The microelectronic structure of claim 13 , wherein the bottom electrode, the resistivity-switchable layer, and the top electrode comprise a metal-insulator-metal (MIM) stack comprising a memory cell.