Whisker-free lead frames
View Patent ↗A method of fabricating an interconnection between a region of copper material and a conducting region is disclosed. The method includes a step of forming a region of tin material and a step of forming a region of nickel material. The method also includes a step of melting the tin material to induce formation of a nickel/tin/copper intermetallic composition at an interface between the region of copper material and the conducting region. The region of tin material and the region of nickel material define the interface between the region of copper material and the conducting region.
1. A method of reducing the formation of tin whiskers in an electronic interconnection, the method comprising the steps of:
providing an electronic package including a contact comprising copper, a first layer comprising nickel adjoining the contact, the first layer having a thickness in a range of about 0.05 μm to 1.0 μm, and a second layer comprising tin adjoining the first layer, a weight percentage of nickel relative to tin being in a range of about 1 to 12, the first and second layers being lead-free, and
heating the electronic package to a temperature of between 232° C. and 500° C. for more than about five seconds to cause melting of the tin and formation of a substantially planar intermetallic material comprising copper, tin and nickel at a copper interface with the contact and having substantially no elemental non-bound tin.
2. The method of claim 1 , further comprising heating the electronic package for a time period in a range between 5 seconds and 120 seconds.
3. The method of claim 1 , further comprising annealing the electronic package at a temperature of between 100° C. and 200° C. for a time period in a range between about 0.5 hours and eight hours.
4. The method of claim 1 , wherein the electronic package includes a chip mounted to a lead frame, the lead frame including the contact.
5. The method of claim 1 , wherein a planarity of the intermetallic material is at least about −0.9 μm to +0.9 μm.
6. The method of claim 1 , wherein the electronic package is heated to a temperature between 232° C. and 270° C.
7. The method of claim 6 , further comprising heating the electronic package for a time period in a range between 5 seconds and 120 seconds.
8. The method of claim 7 , wherein the electronic package includes a chip mounted to a lead frame, the lead frame including the contact.
9. The method of claim 7 , wherein the electronic package comprises a polymer.
10. A method of reducing the formation of tin whiskers in an electronic interconnection, the method comprising the steps of:
providing an electrical contact comprising copper;
forming a first lead-free layer on the electrical contact, the first lead-free layer comprising nickel having a thickness in a range of about 0.05 μm to 1.0 μm;
forming a second lead-free layer adjoining the first lead-free layer, the second lead-free layer comprising tin, a weight percentage of nickel relative to tin being in a range of about 1 to 12;
heating the contact and first and second lead-free layers to a temperature of between 232° C. and 270° C. for a time period between 5 seconds and 120 seconds to cause melting of the tin and formation of a substantially planar intermetallic material comprising copper, tin and nickel at a copper interface with the contact and having essentially no elemental non-bound tin.
11. The method of claim 10 , wherein a planarity of the intermetallic material is at least about −0.9 μm to +0.9 μm.
12. The method of claim 10 , wherein the contact is part of a lead frame.
13. The method of claim 12 , wherein the lead frame is part of an electronic package comprising a polymer.
14. The method of claim 12 , wherein a weight percentage of nickel relative to lead is in a range of about 3 to 7.
15. An electronic assembly, comprising:
a lead frame including a plurality of leads comprising copper;
a chip bonded to the lead frame and encapsulated in a polymer composition;
a first layer comprising nickel, the first layer formed on and interfacing with the leads and having a thickness between about 0.05 μm to 1.0 μm; and
a lead-free second layer comprising tin, the second layer overlying the first layer and having a melting point between about 232° C. to 270° C., a weight ratio of nickel in the first layer to tin in the second layer being in a range of about 1% to 12%;
wherein the plurality of leads and the first and second layers are positioned with respect to each other such that, when the second layer is melted, an intermetallic layer comprising copper, nickel and tin is formed at an interface with the leads after a sufficient time has elapsed, the intermetallic layer having substantially no elemental non-bound tin.
16. The electronic assembly of claim 15 , wherein a weight ratio of nickel in the first layer to tin in the second layer is between 3% and 7%.