IP Library Granted Patent US 8,232,515
Granted Patent B2
US 8,232,515 · App. 12/472,735 · Granted Jul 31, 2012

Imaging device having a radiation detecting structure disposed at a semiconductor substrate with a thermalizing material and a first radiation-reactive material sensitive to neutron radiation

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Quick Facts
Patent No.
US 8,232,515
App. No.
12/472,735
Granted
Jul 31, 2012
Kind
B2
Abstract

An imaging device suitable for detecting certain imaging particles and recording the detection of imaging particles, and as such can include certain recording devices such as a charge storage structure.

Claims (25)

1. A device comprising:

a first radiation-detecting structure disposed at a semiconductor substrate comprising a thermalizing material, the first radiation-detecting structure comprising a first radiation-reactive material sensitive to neutron radiation.

2. The device of claim 1 , wherein the first radiation detecting structure comprises a charge storage structure, the charge storage structure disposed between the thermalizing material and a second thermalizing material.

3. The device of claim 1 , wherein the thermalizing material comprises a material selected from the group consisting of hydrogen-containing materials, deuterium-containing materials, and carbon-containing materials.

4. The device of claim 1 , wherein the thermalizing material comprises a polymer selected from the group of polymers consisting of polyolefins, polyamides, polyimides, polyesters, polystyrenes, polycarbonates, polyurethanes, polyethers, polysulphones, polyvinyls, and polyactic acids, or a combination thereof.

5. The device of claim 1 , wherein the first radiation-detecting structure further comprises a second radiation-reactive material sensitive to a second radiation type.

6. The device of claim 1 further comprising:

a base;

the substrate overlying at least a portion of the base, and the radiation-detecting structure including an array of charge storage structures at the substrate.

7. The device of claim 6 , wherein the radiation-detecting structure comprises a memory array comprising the array of charge storage structures.

8. The device of claim 7 , wherein each of the charge storage structures within the array of charge storage structures comprise a conductive charge storage layer.

9. The device of claim 7 , wherein each of the charge storage structures within the array of charge storage structures comprise a non-conductive charge storage layer.

10. The device of claim 7 , wherein each of the charge storage structures within the array of charge storage structures comprise a nitrogen-containing layer disposed between and in direct contact with an underlying dielectric layer and an overlying dielectric layer.

11. The device of claim 6 , wherein the substrate is disposed within an interior space within the base.

12. The device of claim 6 , wherein the substrate has a diameter of at least about 10 cm.

13. The device of claim 6 , wherein the substrate has an average thickness within a range between about 1 mm and about 5 mm.

14. The device of claim 6 , further comprising a cover overlying the radiation-detecting structure.

15. The device of claim 14 , wherein the cover is an interposer to provide electrical connections between the radiation-detecting structure and an external contact of the interposer.

16. A device comprising:

a first radiation-detecting structure comprising a charge-storage structure and a neutron radiation-reactive material; and

a second radiation-detecting structure comprising a charge-storage structure electrically coupled to the first radiation-detecting structure.

17. The device of claim 16 , wherein the first radiation-detecting structure is part of a first substrate and the second radiation-detecting structure is part of a second substrate, wherein the first substrate and second substrate are different substrates.

18. The device of claim 17 , further comprising a housing, the housing containing a plurality of substrates, each substrate of the plurality of substrates comprising a plurality of radiation-detecting structures.

19. The device of claim 18 , wherein the array of radiation-detecting structures define a major plane of each respective substrate, and wherein each major plane of the respective substrates are coplanar with each other.

20. The device of claim 19 , further comprising a thermalizing material disposed between each of the substrates of the plurality of substrates.

Assignments (9)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 15, 2022
From: CYPRESS SEMICONDUCTOR CORPORATION
To: INFINEON TECHNOLOGIES LLC
Reel/Frame 059721/0467 →
RELEASE OF SECURITY INTEREST Recorded Mar 16, 2022
From: MUFG UNION BANK, N.A.
To: CYPRESS SEMICONDUCTOR CORPORATION; SPANSION LLC
Reel/Frame 059410/0438 →
CORRECTIVE ASSIGNMENT TO CORRECT THE 8647899 PREVIOUSLY RECORDED ON REEL 035240 FRAME 0429. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY INTERST. Recorded Nov 3, 2020
From: CYPRESS SEMICONDUCTOR CORPORATION; SPANSION LLC
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 058002/0470 →
ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN INTELLECTUAL PROPERTY Recorded Oct 28, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: MUFG UNION BANK, N.A.
Reel/Frame 050896/0366 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 2, 2015
From: SPANSION, LLC
To: CYPRESS SEMICONDUCTOR CORPORATION
Reel/Frame 036051/0256 →
SECURITY INTEREST Recorded Mar 21, 2015
From: CYPRESS SEMICONDUCTOR CORPORATION; SPANSION LLC
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 035240/0429 →
RELEASE OF SECURITY INTEREST Recorded Mar 13, 2015
From: BARCLAYS BANK PLC
To: SPANSION LLC; SPANSION INC.; SPANSION TECHNOLOGY LLC
Reel/Frame 035201/0159 →
SECURITY AGREEMENT Recorded Jun 4, 2010
From: SPANSION LLC; SPANSION INC.; SPANSION TECHNOLOGY INC.; SPANSION TECHNOLOGY LLC
To: BARCLAYS BANK PLC
Reel/Frame 024522/0338 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 5, 2009
From: HOSSAIN, TIMOTHY Z.; CLOPTON, PATRICK MARK; FULLWOOD, CLAYTON; POSEY, DAN E.
To: SPANSION LLC
Reel/Frame 023055/0390 →