STRUCTURE AND METHOD FOR MANUFACTURING DEVICE WITH A V-SHAPE CHANNEL NMOSFET
A CMOS structure includes a v-shape surface in an nMOSFET region. The v-shape surface has an orientation in a (100) plane and extends into a Si layer in the nMOSFET region. The nMOSFET gate dielectric layer is a high-k material, such as Hf02. The nMOSFET has a metal gate layer, such as Ta. Poly-Si is deposited on top of the metal gate layer.
1 . A device, comprising:
a structure having an nMOSFET region;
a V-shape surface in the nMOSFET region, the V-shape surface having an orientation in a (100) plane and extending into a Si layer in the nMOSFET region;
a gate dielectric layer in the V-shape surface;
a metal gate layer on top of the gate dielectric layer; and
poly-Si on top of the metal gate layer.
2 . A device according to claim 1 , wherein the gate dielectric layer is a high-k material.
3 . A device according to claim 2 , wherein the high-k material is selected from the group consisting of: HfO2, ZrO 2 , Al 2 O 3 , TiO 2 , La 2 O 3 , SrTiO 3 and LaAlO 3 .
4 . A device according to claim 2 , wherein the metal gate layer is selected from the group consisting of: TaN, TiN, TiAlN and WN.
5 . A device according to claim 1 , wherein the poly-Si is in-situ doped with P.
6 . A device according to claim 1 , wherein the V-shape surface has a depth less than the thickness of the Si layer.