Semiconductor device
The present invention provides a semiconductor device and a fabrication method therefor, the semiconductor device including a first semiconductor chip disposed on a substrate, a first sealing resin sealing the first semiconductor chip, a built-in semiconductor device disposed on the first sealing resin, and a second sealing resin sealing the first sealing resin and the built-in semiconductor device and covering a side surface of the substrate. According to an aspect of the present invention, it is possible to provide a high-quality semiconductor device and a fabrication method therefor, in which downsizing and cost reduction can be realized.
1. A wireless communications device comprising:
a processor; and
a memory coupled to said processor, said memory comprising:
a first semiconductor chip disposed on a first surface of a first substrate, the first substrate comprises a second surface opposing the first surface;
a first resin sealing the first semiconductor chip;
a built-in semiconductor device comprising:
a second substrate;
a second semiconductor chip disposed on the second substrate; and
a second resin sealing the second semiconductor chip, the second resin of the built-in semiconductor device disposed on the first resin; and
a third resin sealing the first resin and the built-in semiconductor device and covering a side surface of the first substrate and not extending beyond the second surface of the first substrate.
2. The wireless communications device of claim 1 , wherein said memory is flash memory.
3. The wireless communications device of claim 2 , wherein said flash memory is NAND flash memory.
4. The wireless communications device of claim 2 , wherein said flash memory is NOR flash memory.
5. The wireless communications device of claim 2 , wherein said flash memory utilizes mirrorbits technology.
6. The wireless communications device of claim 1 , further comprising:
a receiver coupled to said processor; and
a transmitter coupled to said processor.
7. The wireless communications device of claim 1 , wherein said first substrate comprises a pad electrode and said built-in semiconductor device comprises a pad electrode.
8. The wireless communications device of claim 7 , wherein said pad electrode of said first substrate is reverse bonded to said pad electrode of said built-in semiconductor device.
9. A wireless communications device comprising:
a processor;
a receiver coupled to said processor; and
a memory coupled to said processor, said memory comprising:
a first semiconductor chip attached on a first surface of a first substrate, the first substrate comprises a second surface opposing the first surface;
a first resin sealing the first semiconductor chip;
a built-in semiconductor device comprising:
a second substrate;
a second semiconductor chip attached on the second substrate; and
a second resin sealing the second semiconductor chip, the second resin of the built-in semiconductor device attached on the first resin; and
a third resin sealing the first resin and the built-in semiconductor device and covering a side surface of the first substrate and not extending beyond the second surface of the first substrate.
10. The wireless communications device of claim 9 , wherein said memory is flash memory.
11. The wireless communications device of claim 10 , wherein said flash memory is NAND flash memory.
12. The wireless communications device of claim 10 , wherein said flash memory is NOR flash memory.
13. The wireless communications device of claim 10 , wherein said flash memory utilizes mirrorbits technology.
14. The wireless communications device of claim 9 , further comprising:
a transmitter coupled to said processor; and
an antenna coupled to said transmitter and said receiver.
15. The wireless communications device of claim 9 , wherein said first substrate comprises a pad electrode and said built-in semiconductor device comprises a pad electrode.
16. The wireless communications device of claim 15 , wherein said pad electrode of said first substrate is reverse bonded to said pad electrode of said built-in semiconductor device.
17. A wireless communications device comprising:
a processor;
a transmitter coupled to said processor; and
a memory coupled to said processor, said memory comprising:
a first semiconductor chip disposed on a first surface of a first substrate, the first substrate comprises a second surface opposing the first surface;
a first resin sealing the first semiconductor chip;
a built-in semiconductor device comprising:
a second substrate;
a second semiconductor chip disposed on the second substrate; and
a second resin sealing the second semiconductor chip, the second resin of the built-in semiconductor device disposed on the first resin; and
a third resin sealing the first resin and the built-in semiconductor device and covering a side surface of the first substrate and not extending beyond the second surface of the first substrate.
18. The wireless communications device of claim 17 , wherein said memory is flash memory.
19. The wireless communications device of claim 17 , wherein said memory is NAND flash memory.
20. The wireless communications device of claim 17 , wherein said memory is NOR flash memory.