Post-facto correction for cross coupling in a flash memory
View Patent ↗A method of storing and reading data, using a memory that includes a plurality of cells (e.g. flash cells), such that data are stored in the cells by setting respective values of a physical parameter of the cells (e.g. threshold voltage) to be indicative of the data, and such that data are read from the cells by measuring those values. One of the cells and its neighbors are read. The data stored in the cell are estimated, based on the measurements and on respective extents to which the neighbors disturb the reading. Preferably, the method also includes determining those respective extents to which the neighbors disturb the reading, for example based on the measurements themselves.
1. A method of storing and reading data, comprising:
(a) providing a memory that includes a plurality of cells, data being stored in said cells by setting respective values of a physical property of said cells to be indicative of said data, said cells subsequently being read by measuring said respective values to obtain respective measurements of said respective values;
(b) reading one of said cells and at least one neighbor cell of said one cell, thereby obtaining said respective measurements for said one cell and for each said neighbor cell; and
(c) estimating respective said data that have been stored in said one cell, based on said respective measurements and on a respective extent which each said neighbor cell disturbs said reading of said one cell; and
(d) determining said respective extent to which said each said neighbor cell disturbs said reading of said one cell;
wherein determining is based on a nonlinear model of said disturbing.
2. The method of claim 1 , wherein said cells are flash cells and wherein said physical property is a threshold voltage of said flash cells.
3. The method of claim 1 , further comprising of:
(e) storing said data in said one cell and in each said at least one neighbor cell.
4. The method of claim 1 , wherein said determining is effected before said storing.
5. The method of claim 1 , wherein said determining is effected iteratively along with said estimating.
6. A method of storing and reading data, comprising:
(a) providing a memory that includes a plurality of cells, data being stored in said cells by setting respective values of a physical property of said cells to be indicative of said data, said cells subsequently being read by measuring said respective values to obtain respective measurements of said respective values;
(b) reading one of said cells and at least one neighbor cell of said one cell, thereby obtaining said respective measurements for said one cell and for each said neighbor cell; and
(c) determining said respective extent to which said each said neighbor cell disturbs said reading of said one cell, wherein said determining is based on a nonlinear model of said disturbing; and
(d) estimating respective said data that have been stored in said one cell, based on said respective measurements and on the respective extent which each said neighbor cell disturbs said reading of said one cell, said estimating is a computation that does not include re-setting of the respective measurements.
7. The method of claim 6 , wherein said cells are flash cells and wherein said physical property is a threshold voltage of said flash cells.
8. The method of claim 7 , further comprising of:
(e) storing said data in said one cell and in each said at least one neighbor cell.
9. The method of claim 6 , wherein said determining is effected before said storing.
10. The method of claim 6 , wherein said determining is effected iteratively along with said estimating.
11. A method of storing and reading data, comprising:
(a) providing a memory that includes a plurality of cells, data being stored in said cells by setting respective values of a physical property of said cells to be indicative of said data, said cells subsequently being read by measuring said respective values to obtain respective measurements of said respective values;
(b) reading one of said cells and at least one neighbor cell of said one cell, thereby obtaining said respective measurements for said one cell and for each said neighbor cell; and
(c) determining said respective extent to which said each said neighbor cell disturbs said reading of said one cell, wherein said determining is based on a nonlinear model of said disturbing;
(d) estimating respective said data that have been stored in said one cell, based on said respective measurements and on the respective extent which each said neighbor cell disturbs said reading of said one cell, said estimating is a computation that does not include re-setting of the respective measurements; and
(e) storing said data in said one cell and in each said at least one neighbor cell.
12. The method of claim 11 , wherein said cells are flash cells and wherein said physical property is a threshold voltage of said flash cells.
13. The method of claim 11 , wherein said determining is effected before said storing.
14. The method of claim 11 , wherein said determining is effected iteratively along with said estimating.