Memory cell that includes a carbon-based memory element and methods of forming the same

1. A method of forming a memory cell, the method comprising the following steps performed in order:

(a) forming a layer of dielectric material above a substrate;

(b) forming an opening in the dielectric layer;

(c) forming a carbon-based switching material layer within the opening by:

(i) depositing a solution that includes a carbon-based switching material on the substrate;

(ii) rotating the substrate to cause the solution to flow into the opening;

(iii) annealing the substrate at a temperature between 100° C. and 500° C. for up to five minutes;

(iv) after step (iii), cooling the substrate to a temperature between 20° C. to 30° C.; and

(v) repeatedly performing steps (i) through (iv) until a desired thickness of carbon-based switching material remains in the opening; and

(d) forming a memory element using the carbon-based switching material layer.

2. The method of claim 1 , wherein the dielectric layer comprises silicon dioxide.

3. The method of claim 1 , wherein the opening has a width of 43 nanometers or less.

4. The method of claim 1 , wherein forming the opening comprises exposing a conductive layer located below the dielectric material.

5. The method of claim 1 , further comprising forming a plurality of openings in the dielectric layer, and rotating the substrate to cause the solution to flow into each opening and to form a carbon-based switching material layer within each opening.

6. The method of claim 1 , wherein the solution comprises a carbon-based switching material and water.

7. The method of claim 1 , wherein the carbon-based switching material comprises CNT material.

8. The method of claim 1 , wherein annealing the substrate causes the carbon-based switching material to remain in the opening.

9. The method of claim 1 , wherein the carbon-based switching material layer has a thickness of 100 to 600 angstroms.

10. The method of claim 1 , further comprising forming a conducting layer within the opening and above the carbon-based switching material layer.

11. A memory cell formed by the method of claim 1 .

12. A method of forming a memory cell, the method comprising the following steps performed in order:

(a) forming a layer of dielectric material above a substrate;

(b) forming an opening in the dielectric layer;

(c) depositing a solution that includes a carbon-based switching material on the substrate;

(d) rotating the substrate to cause the solution to flow into the opening and to form a carbon-based switching material layer within the opening;

(e) annealing the substrate after step (d) at a temperature between 100° C. and 500° C. for up to five minutes so that the carbon-based switching material remains in the opening;

(f) after step (e), cooling the substrate to a temperature between 20° C. to 30° C.;

(g) repeating steps (c)-(f) until the carbon-based switching material layer within the opening has a desired thickness; and

(h) forming a memory element using the carbon-based switching material layer.

13. The method of claim 12 , further comprising forming a plurality of openings in the dielectric layer, and rotating the substrate to cause the solution to flow into each opening and to form a carbon-based switching material layer within each opening.

14. The method of claim 12 , wherein the carbon-based switching material layer has a thickness of 100 to 600 angstroms.

15. A memory cell formed by the method of claim 12 .