Dielectric barrier layer for increasing electromigration lifetimes in copper interconnect structures
View Patent ↗Embodiments of the invention include a copper interconnect structure having increased electromigration lifetime. Such structures can include a semiconductor substrate having a copper layer formed thereon. A dielectric barrier stack is formed on the copper layer. The dielectric barrier stack includes a first portion formed adjacent to the copper layer and a second portion formed on the first portion, the first portion having improved adhesion to copper relative to the second portion and both portions are formed having resistance to copper diffusion. The invention also includes several embodiments for constructing such structures. Adhesion of the dielectric barrier stack to copper can be increased by plasma treating or ion implanting selected portions of the dielectric barrier stack with adhesion enhancing materials to increase the concentration of such materials in the stack.
1. A method for forming a copper interconnect structure having an improved electromigration lifetime, the method comprising:
a) providing a substrate having a copper layer formed thereon;
b) forming a dielectric barrier stack on the copper layer, wherein said forming comprises forming a first dielectric barrier layer;
c) treating the dielectric barrier stack with adhesion enhancing materials in order to enhance the adhesion of the dielectric barrier stack to the copper layer wherein said treating comprises ion implanting the first layer of dielectric barrier material with said adhesion enhancing materials comprising at least one of phosphorus and sulfur; and
wherein forming the dielectric stack further comprises forming a second dielectric barrier layer on the first dielectric barrier.
2. The method of claim 1 wherein forming a first dielectric barrier layer comprises depositing a first layer of dielectric barrier material on the copper layer;
wherein ion implanting the first dielectric barrier layer includes implanting at least one of hydrogen, carbon, nitrogen, phosphorus, and sulfur; and
wherein forming the second dielectric barrier layer comprises second depositing a dielectric barrier material on the ion implanted first dielectric barrier layer.
3. The method of claim 2 wherein forming a first dielectric barrier layer comprises depositing a first layer of dielectric barrier material on the copper layer using plasma enhanced chemical vapor deposition (PECVD) techniques;
wherein ion implanting the first dielectric barrier layer includes implanting at least one of carbon and nitrogen into the first dielectric barrier layer;
and
wherein forming the second dielectric barrier layer comprises second depositing a dielectric barrier material on the plasma treated first dielectric barrier layer using PECVD techniques.
4. The method of claim 1 wherein forming the dielectric stack comprises forming a dielectric barrier layer; and
wherein treating the dielectric barrier stack comprises ion implanting the dielectric barrier layer with adhesion enhancing materials so that a portion of the dielectric barrier layer closest to the underlying copper layer has an increased density of adhesion enhancing materials thereby increasing the adhesion of the dielectric barrier layer to the underlying copper layer.
5. The method of claim 4
wherein ion implanting the dielectric barrier layer includes selecting an implantation voltage that will allow the implanted ions to penetrate through the dielectric barrier layer until the implanted ions reach a desired depth thereby increasing the density of adhesion enhancing materials at the desired depth so as to increase the adhesion of the dielectric barrier layer to the underlying copper layer.
6. The method of claim 1 wherein said ion implanting of the first layer of dielectric barrier material increases a concentration of at least one of phosphorus and sulfur relative to that of said second dielectric barrier layer.
7. The method of claim 1 wherein the first barrier layer is formed to a very thin profile of in the range of about 50 Å to about 100 Å thick.
8. The method of claim 1 wherein the first barrier layer is formed to a very thin profile of in the range of about 50 Å.
9. The method of claim 1 wherein the second barrier layer is formed to a greater thickness than the first barrier layer.
10. The method of claim 1 wherein the second barrier layer is formed to a thickness in the range of about 200 Å to about 1000 Å.
11. The method of claim 1 wherein the second barrier layer is formed wherein the first barrier layer has a greater concentration of phosphorus relative to the second barrier layer.