IP Library Granted Patent US 8,368,481
Granted Patent B2
US 8,368,481 · App. 12/903,387 · Granted Feb 5, 2013

RF switchable balun

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Quick Facts
Patent No.
US 8,368,481
App. No.
12/903,387
Granted
Feb 5, 2013
Kind
B2
Abstract

A handheld communication device having an RF front end module has a switchable balun comprising a primary winding having a first two port winding and a second two port winding where a low noise amplifier is operatively coupled to the first and second two port windings and a power amplifier is operatively coupled to the first and second two port windings. A secondary winding is operatively coupled to an antenna, and a transceiver is operatively coupled to the low noise amplifier and the power amplifier. When the switchable balun is in a receive state, the antenna is operatively coupled to the transceiver through the low noise amplifier, and when the switchable balun is in a transmit state, the antenna is operatively coupled to the transceiver through the power amplifier. The ratio of the primary winding to the secondary winding is greater than a one-to-one ratio.

Claims (51)

1. A switchable balun comprising:

a. a primary winding operatively coupled to a second port and a third port, wherein

i. said second port is operatively coupled to a low noise amplifier; and

ii. said third port is operatively coupled to a power amplifier,

b. a secondary winding operatively coupled to a first port, wherein said first port is operatively coupled to an antenna; and

c. a first variable capacitor in parallel with said secondary winding, said first variable capacitor configured to transform the impedance seen by said primary winding so that the impedance at said second port and said third port is smaller than the impedance at said first port,

wherein

when said switchable balun is in a first state, said first port is coupled to said second port,

when said switchable balun is in a second state, said first port is coupled to said third port, and

wherein the ratio of said primary winding to said secondary winding is at least greater than or equal to a one-to-one ratio.

2. The switchable balun circuit of claim 1 , wherein said first variable capacitor is formed from one or more of metal-insulator-metal (MIM) capacitors, a voltage controlled varactor and NMOS switches.

3. The switchable balun circuit of claim 2 , further comprising a serial-to-parallel bus operatively coupled to said first variable capacitor, said first variable capacitor responsive to digital signals received from said serial-to-parallel bus to tune the capacitance value of said first variable capacitor.

4. The switchable balun circuit of claim 1 , further comprising respective second and third variable capacitors in parallel with each of said second and third ports.

5. The switchable balun circuit of claim 1 , wherein said ratio of said primary winding to said secondary winding is at least greater than or equal to a two-to-one ratio.

6. The switchable balun circuit of claim 1 , wherein said primary winding is formed from a plurality of two port windings.

7. A radio frequency (RF) front end module having a switchable balun comprising:

a. a primary winding operatively coupled to a second port and a third port, wherein

i. said second port is operatively coupled to a low noise amplifier; and

ii. said third port is coupled to a power amplifier,

b. a secondary winding is operatively coupled to a first port, wherein said first port is operatively coupled to an antenna;

c. a variable capacitor in parallel with said secondary winding, said variable capacitor configured to transform the impedance seen by said primary winding so that the impedance at said second port and said third port is smaller than the impedance at said first port,

wherein

when said switchable balun is in a first state, said first port is operatively coupled to said second port,

when said switchable balun is in a second state, said first port is operatively coupled to said third port, and

the ratio of said primary winding to said secondary winding is at least greater than or equal to a one and one-half-to-one ratio.

8. The RF front end module of claim 7 , said switchable balun circuit further comprising:

a. a first set of shunt devices connected between said second port and a virtual ground; and

b. a second set of shunt devices connected between said third port and said virtual ground.

9. The RF front end module of claim 8 , wherein said first and said second shunt devices are NMOS shunt devices having respective sources coupled to said virtual ground.

10. The RF front end module of claim 7 , wherein said power amplifier and said low noise amplifier are operatively coupled to a transceiver.

11. The RF front end module of claim 9 , further comprising at least one capacitor in series with said source of said NMOS shunt devices and said virtual ground.

12. The RF front end module of claim 7 , wherein said variable capacitor is formed from at least one metal-insulator-metal (MIM) capacitor, at least one voltage controlled varactor and at least one NMOS switch.

13. The RF front end module of claim 12 , further comprising a serial-to-parallel bus operatively coupled to said variable capacitor, said variable capacitor responsive to digital signals received from said serial-to-parallel bus to tune the capacitance value of said variable capacitor.

14. The RF front end module of claim 7 , further comprising a respective additional variable capacitor in parallel with each of said second and third ports.

15. An handheld communication device having an RF front end module comprising

a. a switchable balun comprising:

i. a primary winding having a first two port winding and a second two port winding, wherein

a. an input of a low noise amplifier is operatively coupled to said first and said second two port windings; and

b. an output of a power amplifier is operatively coupled to said first and said second two port windings,

ii. a secondary winding operatively coupled to an antenna; and

iii. a first variable capacitor in parallel with said secondary winding, said first variable capacitor configured to transform the impedance seen by said primary winding so that the impedance at the output of said power amplifier and the input of said low noise amplifier are each smaller than the impedance at said antenna,

b. a transceiver operatively coupled to said low noise amplifier and said power amplifier,

wherein

when said switchable balun is in a receive state, said antenna is operatively coupled to said transceiver through said low noise amplifier,

when said switchable balun is in a transmit state, said antenna is operatively coupled to said transceiver through said power amplifier, and

the ratio of said primary winding to said secondary winding is greater than a one-to-one ratio.

16. The handheld communication device of claim 15 , wherein said ratio of said primary winding to said secondary winding is at least two-to-one.

17. The handheld communication device of claim 15 , said switchable balun further comprising an additional variable capacitor in parallel with said primary winding.

18. The handheld communication device of claim 15 , wherein said primary winding further comprise at least one additional two port winding.

19. The handheld communication device of claim 15 , said switchable balun further comprising a first capacitor in parallel with said low noise amplifier and a second capacitor in parallel with said power amplifier.

20. The handheld communication device of claim 19 , wherein said first and said second capacitors are variable shunt capacitors.

Assignments (6)
RELEASE OF SECURITY INTEREST Recorded May 29, 2018
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: MICROSEMI CORPORATION; MICROSEMI SEMICONDUCTOR (U.S.), INC.; MICROSEMI FREQUENCY AND TIME CORPORATION; MICROSEMI COMMUNICATIONS, INC.; MICROSEMI SOC CORP.; MICROSEMI CORP. - POWER PRODUCTS GROUP; MICROSEMI CORP. - RF INTEGRATED SOLUTIONS
Reel/Frame 046251/0391 →
PATENT SECURITY AGREEMENT Recorded Feb 3, 2016
From: MICROSEMI CORPORATION; MICROSEMI SEMICONDUCTOR (U.S.) INC. (F/K/A LEGERITY, INC., ZARLINK SEMICONDUCTOR (V.N.) INC., CENTELLAX, INC., AND ZARLINK SEMICONDUCTOR (U.S.) INC.); MICROSEMI FREQUENCY AND TIME CORPORATION (F/K/A SYMMETRICON, INC.); MICROSEMI COMMUNICATIONS, INC. (F/K/A VITESSE SEMICONDUCTOR CORPORATION); MICROSEMI SOC CORP. (F/K/A ACTEL CORPORATION); MICROSEMI CORP. - POWER PRODUCTS GROUP (F/K/A ADVANCED POWER TECHNOLOGY INC.); MICROSEMI CORP. - RF INTEGRATED SOLUTIONS (F/K/A AML COMMUNICATIONS, INC.)
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037691/0697 →
RELEASE OF SECURITY INTEREST Recorded Jan 19, 2016
From: BANK OF AMERICA, N.A.
To: MICROSEMI CORPORATION; MICROSEMI CORP.-ANALOG MIXED SIGNAL GROUP, A DELAWARE CORPORATION; MICROSEMI SOC CORP., A CALIFORNIA CORPORATION; MICROSEMI SEMICONDUCTOR (U.S.) INC., A DELAWARE CORPORATION; MICROSEMI FREQUENCY AND TIME CORPORATION, A DELAWARE CORPORATION; MICROSEMI COMMUNICATIONS, INC. (F/K/A VITESSE SEMICONDUCTOR CORPORATION), A DELAWARE CORPORATION; MICROSEMI CORP.-MEMORY AND STORAGE SOLUTIONS (F/K/A WHITE ELECTRONIC DESIGNS CORPORATION), AN INDIANA CORPORATION
Reel/Frame 037558/0711 →
NOTICE OF SUCCESSION OF AGENCY Recorded Apr 9, 2015
From: ROYAL BANK OF CANADA (AS SUCCESSOR TO MORGAN STANLEY & CO. LLC)
To: BANK OF AMERICA, N.A., AS SUCCESSOR AGENT
Reel/Frame 035657/0223 →
SUPPLEMENTAL PATENT SECURITY AGREEMENT Recorded Nov 11, 2011
From: MICROSEMI CORPORATION; MICROSEMI CORP. - ANALOG MIXED SIGNAL GROUP; MICROSEMI CORP. - MASSACHUSETTS; ACTEL CORPORATION
To: MORGAN STANLEY & CO. LLC
Reel/Frame 027213/0611 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 8, 2011
From: JIN, YALIN; KRISHNAMURTHY, VIKRAM; HOOPER, JOHN MICHAEL
To: MICROSEMI CORPORATION
Reel/Frame 025758/0396 →