NON-VOLATILE MEMORY CELL CONTAINING NANODOTS AND METHOD OF MAKING THEREOF

1 . A non-volatile memory cell, comprising:

a first electrode;

a steering element;

a storage element located in series with the steering element;

a plurality of discrete conductive nano-features separated from each other by an insulating matrix, wherein the plurality of discrete nano-features are located in direct contact with the storage element; and

a second electrode.

2 . The non-volatile memory cell of claim 1 , wherein the plurality of discrete conductive nano-features comprise semiconductor nanodots, metal nanodots, or metal alloy nanodots.

3 . The non-volatile memory cell of claim 1 , wherein the plurality of discrete conductive nano-features comprise metal nanodots which have a substantially spherical shape and a diameter of less than 20 nm.

4 . The non-volatile memory cell of claim 2 , wherein the metal nanodots have a curved contact area of about 2 nm to about 3 nm with the storage element.

5 . The non-volatile memory cell of claim 2 , wherein the metal nanodots comprise noble metal nanodots.

6 . The non-volatile memory cell of claim 1 , wherein:

the switching mechanism of the non-volatile memory cell is formation of filaments through the storage element; and

the filaments are only formed through the storage element adjacent to the discrete conductive nano-features when the non-volatile memory cell is programmed.

7 . The non-volatile memory cell of claim 1 , wherein:

the steering element is located above the first electrode;

the storage element is located above the steering element;

the plurality of discrete conductive nano-features and the insulating matrix are located above and in direct contact with the storage element; and

the second electrode is located above the plurality of discrete conductive nano-features.

8 . The non-volatile memory cell of claim 1 , wherein:

the plurality of discrete conductive nano-features and the insulating matrix are located above the first electrode;

the storage element is located above and in direct contact with the plurality of discrete conductive nano-features and the insulating matrix;

the steering element is located above the storage element; and

the second electrode is located above the steering element.

9 . The non-volatile memory cell of claim 1 , wherein the steering element is located either above or below the storage element, and the plurality of discrete conductive nano-features and the insulating matrix are located between the storage element and the steering element.

10 . The non-volatile memory cell of claim 1 , wherein the storage element is a resistivity switching material.

11 . The non-volatile memory cell of claim 1 , wherein the steering element comprises a diode and the storage element comprises at least one of switchable metal oxide, complex metal oxide layer, carbon nanotube material, graphene resistivity switchable material, carbon resistivity switchable material, phase change material, conductive bridge element, or switchable polymer material.

12 . The non-volatile memory cell of claim 11 , wherein:

the steering element comprises a p-i-n polysilicon diode;

the non-volatile memory cell is a rewritable memory cell; and

the non-volatile memory cell is located in a monolithic three dimensional array of memory cells.

13 . The non-volatile memory cell of claim 11 , wherein the storage element comprises at least one material selected from the group consisting of NiO, Nb 2 O 5 , TiO 2 , HfO 2 , Al 2 O 3 , MgO x , CrO 2 , or VO.

14 . The non-volatile memory cell of claim 1 , wherein the plurality of discrete conductive nano-features comprise metal nanodots which have a substantially spherical shape and a diameter of less than 20 nm, the steering element comprises a diode, and the storage element comprises a switchable metal oxide layer.

15 . A method of making a non-volatile memory cell, comprising:

forming a first electrode;

forming a steering element;

forming a storage element;

forming a plurality of discrete conductive nano-features separated from each other by an insulating matrix, wherein the plurality of discrete conductive nano-features are located in direct contact with the storage element; and

forming a second electrode.

16 . The method of claim 15 , wherein the plurality of discrete conductive nano-features comprise semiconductor nanodots, metal nanodots, or metal alloy nanodots.

17 . The method of claim 15 , wherein the plurality of discrete conductive nano-features comprise metal nanodots which have a substantially spherical shape and a diameter of less than 20 nm, the steering element comprises a diode, and the storage element comprises a switchable metal oxide layer.

18 . The method of claim 15 , wherein the step of forming the plurality of discrete conductive nano-features separated from each other by the insulating matrix comprises:

forming the plurality of conductive nano-features separated from each other;

forming an insulating layer over and between the plurality of discrete conductive nano-features; and

etching an upper portion of the insulating layer to expose the plurality of conductive nano-features, wherein a lower portion of the insulating layer remains between the plurality of conductive nano-features after the step of etching the upper portion of the insulating layer to form the insulating matrix.

19 . The method of claim 18 , wherein the step of forming the insulating layer comprise a low temperature and conformal deposition of a silicon oxide layer.

20 . The method of claim 15 , wherein:

the steering element is located above the first electrode;

the storage element is located above the steering element;

the plurality of discrete conductive nano-features and the insulating matrix are located above and in direct contact with the storage element; and

the second electrode is located above the plurality of discrete conductive nano-features.

21 . The method of claim 15 , wherein:

the plurality of discrete conductive nano-features and the insulating matrix are located above the first electrode;

the storage element is located above and in direct contact with the plurality of discrete conductive nano-features and the insulating matrix;

the steering element is located above the storage element; and

the second electrode is located above the steering element.

22 . The method of claim 15 , wherein the steering element is located either above or below the storage element, and the plurality of discrete conductive nano-features and the insulating matrix are located between the storage element and the steering element.

23 . The method of claim 15 , wherein the storage element is a resistivity switching material.

24 . A non-volatile memory cell, comprising:

a first electrode;

a steering element;

a storage element located in series with the steering element;

a plurality of discrete insulating nano-features separated from each other by a conductive matrix, wherein the plurality of discrete insulating nano-features are located in direct contact with the storage element; and

a second electrode.

25 . The non-volatile memory cell of claim 24 , wherein the plurality of discrete insulating nano-features comprise silicon oxide nanoparticles which have a substantially spherical shape and a diameter of less than 20 nm.

26 . The non-volatile memory cell of claim 24 , wherein:

the switching mechanism of the non-volatile memory cell is formation of filaments through the storage element; and

the filaments are only formed through the storage element adjacent to the conductive matrix when the non-volatile memory cell is programmed.

27 . The non-volatile memory cell of claim 24 , wherein:

the steering element is located above the first electrode;

the storage element is located above the steering element;

the plurality of discrete insulating nano-features and the conductive matrix are located above and in direct contact with the storage element; and

the second electrode is located above and in direct contact with the conductive matrix.

28 . The non-volatile memory cell of claim 24 , wherein:

the conductive matrix is located above and in direct contact with the first electrode;

the storage element is located above and in direct contact with the conductive matrix and the plurality of discrete insulating nano-features;

the steering element is located above the storage element; and

the second electrode is located above the steering element.

29 . The non-volatile memory cell of claim 24 , wherein the steering element is located either above or below the storage element, and the plurality of discrete insulating nano-features and the conductive matrix are located between the storage element and the steering element.

30 . The non-volatile memory cell of claim 24 , wherein the storage element is a resistivity switching material.

31 . The non-volatile memory cell of claim 30 , wherein the steering element comprises a diode and the storage element comprises at least one of switchable metal oxide, complex metal oxide layer, carbon nanotube material, graphene resistivity switchable material, carbon resistivity switchable material, phase change material, conductive bridge element, or switchable polymer material.

32 . The non-volatile memory cell of claim 31 , wherein:

the steering element comprises a p-i-n polysilicon diode;

the non-volatile memory cell is a rewritable memory cell;

the non-volatile memory cell is located in a monolithic three dimensional array of memory cells; and

the storage element comprises at least one material selected from the group consisting of NiO, Nb 2 O 5 , TiO 2 , HfO 2 , Al 2 O 3 , MgO x , CrO 2 , or VO.

33 . A method of making a non-volatile memory cell, comprising:

forming a first electrode;

forming a steering element;

forming a storage element;

forming a plurality of discrete insulating nano-features separated from each other by a conductive matrix, wherein the plurality of discrete insulating nano-features and the conductive matrix are located in direct contact with the storage element; and

forming a second electrode.

34 . The method of claim 33 , wherein the step of forming the plurality of discrete insulating nano-features separated from each other by the conductive matrix comprises:

forming the plurality of discrete insulating nano-features separated from each other; and

forming the conductive matrix over and between the plurality of discrete insulating nano-features.

35 . The method of claim 33 , wherein the plurality of discrete insulating nano-features comprise silicon oxide nanoparticles which have a substantially spherical shape.

36 . The method of claim 33 , wherein the storage element is a resistivity switching material.

37 . The method of claim 36 , wherein the steering element comprises a diode and the storage element comprises a switchable metal oxide layer.

38 . The method of claim 33 , wherein:

the steering element is located above the first electrode;

the storage element is located above the steering element;

the plurality of discrete insulating nano-features and the conductive matrix are located above and in direct contact with the storage element; and

the second electrode is located above and in direct contact with the conductive matrix.

39 . The method of claim 33 , wherein the steering element is located either above or below the storage element, and the plurality of discrete insulating nano-features and the conductive matrix are located between the storage element and the steering element.

40 . The method of claim 33 , wherein:

the conductive matrix is located above and in direct contact with the first electrode;

the storage element is located above and in direct contact with the conductive matrix and the plurality of discrete insulating nano-features;

the steering element is located above the storage element; and

the second electrode is located above the steering element.