Mitigation of whiskers in Sn-films
An electronic device includes a metallic conducting lead having a surface. A pre-solder coating over the surface consists essentially of tin and one or more dopants selected from Al or a rare earth element.
1. An electronic device, comprising:
a metallic conducting lead having a surface; and
a pre-solder coating over said surface consisting essentially of tin and one or more lanthanide rare earth elements capable of forming an intermetallic compound with said tin having grain boundary regions therein and resulting in a higher concentration of said one or more lanthanide rare earth elements in said grain boundary regions than an average concentration of said one or more lanthanide rare earth elements in said pre-solder coating.
2. The electronic device as recited in claim 1 , wherein said pre-solder coating consists essentially of said tin and only one of said lanthanide rare earth elements.
3. The electronic device as recited in claim 1 , wherein the conducting lead is a portion of a lead frame.
4. The electronic device as recited in claim 1 , wherein said one or more lanthanide rare earth elements is selected from the group consisting of Gd, Yb, Eu, Nd and Ce.
5. The electronic device as recited in claim 1 , wherein said one or more lanthanide rare earth elements has a total concentration in said pre-solder coating within a range from about 0.1 wt. % to about 7 wt. %.
6. The electronic device as recited in claim 5 , wherein said total concentration is within a range from about 1.5 wt. % to about 3.5 wt. %.
7. The electronic device as recited in claim 1 , wherein a thickness of said pre-solder coating is within a range from about 0.1 μm to about 50 μm.
8. The electronic device as recited in claim 1 , wherein said conducting lead is selected from the group consisting of:
a printed circuit interconnect;
a connector;
a device package lead; and
a wire.
9. The electronic device as recited in claim 1 , further comprising a device package, or a heat sink, that includes said pre-solder coating.
10. The electronic device as recited in claim 1 , wherein said one or more lanthanide rare earth elements is selected from the group consisting of La, Pr, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu.
11. A method of forming a pre-solder coating over an electrical lead, comprising:
providing a metallic conducting lead having a surface;
forming a tin layer over said surface, said tin layer including grains separated by grain boundary regions; and
doping said tin layer with an average concentration of one or more lanthanide rare earth elements such that said pre-solder coating consists essentially of said tin and said one or more lanthanide rare earth elements capable of forming an intermetallic compound with said tin, wherein said one or more lanthanide rare earth elements has a concentration substantially greater in said grain boundary regions than said average concentration.
12. The method as recited in claim 11 , wherein said one or more lanthanide rare earth elements is selected from the group consisting of Gd, Yb, Eu, Nd and Ce.
13. The method as recited in claim 11 , wherein said one or more lanthanide rare earth elements has a concentration within said pre-solder coating within a range from about 0.1 wt. % to about 7 wt. %.
14. The method as recited in claim 11 , wherein said one or more lanthanide rare earth elements has a concentration in said pre-solder coating within a range from about 1.5 wt. % to about 3.5 wt. %.
15. The method as recited in claim 11 , wherein a thickness of said pre-solder coating is within a range from about 0.1 μm to about 50 μm.
16. The method as recited in claim 11 , wherein said metallic conducting lead is portion of a lead frame.
17. The method as recited in claim 11 , wherein said one or more rare earth elements diffuses into said tin layer via said grain boundaries.
18. The method as recited in claim 11 , wherein said one or more lanthanide rare earth elements is selected from the group consisting of La, Pr, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu.
19. An electronic device, comprising:
a metallic conducting lead having a surface; and
a pre-solder coating over said surface consisting essentially of tin, aluminum and one or more lanthanide rare earth elements capable of forming an intermetallic compound with said tin having grain boundary regions therein and resulting in a higher concentration of said aluminum and said one or more lanthanide rare earth elements in said grain boundary regions than an average concentration of said aluminum and said one or more lanthanide rare earth elements in said pre-solder coating.
20. The electronic device as recited in claim 19 , wherein a concentration of said Al in said pre-solder coating is within a range from about 0.1 wt. % to about 4 wt. %.
21. The electronic device as recited in claim 19 , wherein a concentration of said Al in said pre-solder coating is within a range from about 1 wt. % to about 2 wt. %.
22. The electronic device as recited in claim 19 , wherein said one or more lanthanide rare earth elements has a total concentration in said pre-solder coating within a range from about 0.1 wt. % to about 7 wt. %.
23. The electronic device as recited in claim 22 , wherein said total concentration is within a range from about 1.5 wt. % to about 3.5 wt. %.
24. The electronic device as recited in claim 19 , wherein a thickness of said pre-solder coating is within a range from about 0.1 μM to about 50 μm.
25. The electronic device as recited in claim 19 , wherein said conducting lead is selected from the group consisting of:
a printed circuit interconnect;
a connector;
a device package lead; and
a wire.
26. The electronic device as recited in claim 19 , further comprising a device package, or a heat sink, that includes said pre-solder coating.
27. The electronic device as recited in claim 19 , wherein said one or more lanthanide rare earth elements is selected from the group consisting of La, Pr, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu.