PB-free solder bumps with improved mechanical properties
An electronic device, comprising a semiconductor substrate having a first metal pad formed thereover, a device package substrate having a second metal pad formed thereover, and, a doped solder bump. The doped solder bump is located between and in contact with said first and second metal pads. The doped solder bump consisting of Sn, one or both of Ag and Cu, and a fourth row transition metal dopant in a concentration range from 0.35 wt. % to 2 wt. %.
1. An electronic device, comprising:
a semiconductor substrate having a first metal pad formed thereover;
a device package substrate having a second metal pad formed thereover; and
a doped solder bump located between and in contact with said first and second metal pads, said doped solder bump consisting of Sn, one or both of Ag and Cu, and a fourth row transition metal dopant, wherein said doped solder bump has a concentration of said dopant in a range of about 0.1 wt % to about 2 wt %, with a deviation of 20% or less of an average of said concentration throughout said doped solder bump.
2. The electronic device recited in claim 1 , wherein said concentration of said dopant is in a range from about 0.1 wt % to about 0.5 wt %.
3. The electronic device recited in claim 1 , wherein said concentration of said dopant is in a range between 1 wt % and 2 wt %.
4. An electronic device, comprising:
a semiconductor substrate having a first metal pad formed thereover;
a device package substrate having a second metal pad formed thereover; and
a doped solder bump located between and in contact with said first and second metal pads, said doped solder bump consisting of Sn, one or both of Ag and Cu, and a fourth row transition metal dopant, wherein a concentration of said dopant in said doped solder bump exceeds a solubility limit of said dopant in Sn at the melting point of Sn.
5. An electronic device, comprising:
a semiconductor substrate having a first metal pad formed thereover;
a device package substrate having a second metal pad formed thereover; and
a doped solder bump located between and in contact with said first and second metal pads, said doped solder bump consisting of Sn at a first concentration, one or both of Ag and Cu at a second concentration, and a dopant at a third concentration,
wherein said doped solder bump has a first undercooling temperature that is less than a second undercooling temperature of an undoped solder bump consisting of a same said first concentration of Sn and a same said second concentration of said one or both of Ag and Cu.
6. The device of claim 5 , wherein said dopant is a fourth row transition metal dopant.