Diode having high brightness and method thereof
A light emitting diode includes a transparent substrate and a GaN buffer layer on the transparent substrate. An n-GaN layer is formed on the buffer layer. An active layer is formed on the n-GaN layer. A p-GaN layer is formed on the active layer. A p-electrode is formed on the p-GaN layer and an n-electrode is formed on the n-GaN layer. A reflective layer is formed on a second side of the transparent substrate. Also, a cladding layer of AlGaN is between the p-GaN layer and the active layer.
1. A lateral type light emitting device comprising:
a substrate having a thickness of less than 120 μm;
a first semiconductor layer on a first side of the substrate;
an active layer on the first semiconductor layer, wherein the active layer comprises a multiple quantum well layer;
a second semiconductor layer on the active layer;
a clad layer including AlGaN between the active layer and the second semiconductor layer;
a transparent conductive layer on the second semiconductor layer, the transparent conductive layer including ITO (indium-tin-oxide);
a first electrode on the transparent conductive layer;
a second electrode on the first semiconductor layer facing the same direction of the first electrode; and
an Al reflective layer on a second side of the substrate, wherein the second side of the substrate is opposite to the first side of the substrate.
2. The lateral type light emitting device according to claim 1 , wherein the area of the transparent conductive layer is smaller than the area of the substrate.
3. The lateral type light emitting device according to claim 1 , wherein the substrate has an average surface roughness of less than 15 nm.
4. The lateral type light emitting device according to claim 1 , wherein the transparent conductive layer substantially entirely covers a surface of the second semiconductor layer.
5. The lateral type light emitting device according to claim 1 , wherein the first electrode is formed on an end portion of the transparent conductive layer.
6. The lateral type light emitting device according to claim 1 , wherein the second electrode is formed on an end portion of the first semiconductor layer.
7. The lateral type light emitting device according to claim 1 , wherein the surface of the substrate is polished by at least one of a mechanical polishing and dry etching.
8. The lateral type light emitting device according to claim 1 , wherein the surface of the substrate forms an escaping angle for photons to enhance the reflectivity of light from the active layer back through the surface of the second semiconductor layer.
9. The lateral type light emitting device according to claim 1 , wherein the lateral type light emitting diode is housed in a package coated with a reflective material.
10. The lateral type light emitting device according to claim 1 , wherein the first electrode includes at least one of Ni, Au, Pd, and Pt.
11. The lateral type light emitting device according to claim 1 , wherein the second electrode includes at least one of Ti, Al, Cr, and Au.
12. The lateral type light emitting device according to claim 1 , wherein the substrate has an average surface roughness of less than 1 nm.
13. The lateral type light emitting device according to claim 1 , further comprising a first pad on the first electrode, the first pad including Au.
14. The lateral type light emitting device according to claim 13 , wherein the first pad has a thickness of more than 5000 Å.
15. The lateral type light emitting device according to claim 1 , further comprising a second pad on the second electrode, the second pad including Au.
16. The lateral type light emitting device according to claim 15 , wherein the second pad has a thickness of more than 5000 Å.
17. The lateral type light emitting device according to claim 1 , wherein the Al reflective layer covers the second side of the substrate.