Semiconductor device and manufacturing method therefor
A semiconductor device is provided that includes a semiconductor chip and a resin section that molds the semiconductor chip and has a first through-hole. A through electrode that is electrically coupled to the semiconductor chip, extends through the resin section, and extends between a top edge and a bottom edge of an inner surface of the first through-hole. A cavity which extends between planes corresponding to an upper surface and a lower surface of the resin section is formed inside the first through-hole.
1. A method for manufacturing a semiconductor device, comprising:
electrically coupling a through electrode and a semiconductor chip with each other; and
forming a resin section that molds the semiconductor chip, so that the through electrode extends between a top edge and a bottom edge of an inner surface of a first through-hole that penetrates through the resin section, and so that a cavity which extends between planes corresponding to an upper surface and a lower surface of the resin section is formed inside the first through-hole.
2. The method of claim 1 further comprising stacking more than one semiconductor device, so that a through electrode of each of the semiconductor devices contacts the other.
3. The method of claim 1 further comprising stacking more than one semiconductor devices and penetrating the cavity provided in each of the semiconductor devices with a conductive pin, so that the conductive pin directly contacts the through electrode.
4. The method of claim 1 further comprising stacking more than one semiconductor devices and penetrating the cavity provided in each of the semiconductor devices with a conductive pin and electrically coupling the conductive pin and the through electrode with each other.
5. A method for manufacturing a semiconductor device package, comprising:
disposing a lead frame on a die;
forming a convex portion in the lead frame;
disposing a semiconductor chip on a mounting surface of the lead frame;
wire bonding the semiconductor chip to the lead frame;
covering the lead frame with a mold compound; and
cutting off a portion of the mold compound to expose the convex portion in the lead frame wherein a through-hole is formed in the semiconductor device package.
6. The method of claim 5 further comprising cutting off a closed end of the convex portion to create an opened portion of the lead frame that is coplanar with the surface of the mold compound.
7. The method of claim 5 further comprising cutting off a closed end of the convex portion to create an opened portion of the lead frame that extends above the mold compound.
8. The method of claim 5 wherein the convex portion is formed in the lead frame using a pressing die.
9. The method of claim 5 wherein the convex portion has a cross section that is narrower at a closed end of the convex portion than at a base of the convex portion.
10. The method of claim 5 wherein the convex portion extends beyond the mold compound.
11. The method of claim 5 wherein the convex portion is flanged.
12. The method of claim 5 wherein the convex portion is U-shaped.
13. The method of claim 5 wherein the convex portion is V-shaped.
14. The method of claim 6 further comprising placing a connecting pin into the opened portion of the lead frame to connect a plurality of semiconductor device packages.