Control voltage generation circuit and non-volatile memory device including the same
View Patent ↗A control voltage generation circuit for generating a control voltage for controlling a high-voltage transistor includes an input node configured to receive a first enable signal; an output node configured to generate the control voltage, a transferor configured to transfer a voltage of the input node to the output node in response to a transfer signal, an enabling voltage driver configured to drive the output node with a high voltage when the first enable signal is enabled, and a disabling voltage driver configured to drive the output node with a negative voltage when a second enable signal is enabled in a negative mode.
1. A control voltage generation circuit for generating a control voltage for controlling a high-voltage transistor, comprising:
an input node configured to receive a first enable signal;
an output node configured to generate the control voltage;
a transferor configured to transfer a voltage of the input node to the output node in response to a transfer signal;
an enabling voltage driver configured to drive the output node with a high voltage when the first enable signal is enabled; and
a disabling voltage driver configured to drive the output node with a negative voltage when a second enable signal is enabled in a negative mode.
2. The control voltage generation circuit of claim 1 , wherein, when the output node is driven with a negative voltage, the transfer signal has a negative voltage level.
3. The control voltage generation circuit of claim 2 , wherein the disabling voltage driver drives the output node with a ground voltage when the second enable signal is enabled in a normal mode.
4. The control voltage generation circuit of claim 3 , wherein the first enable signal is enabled, when the second enable signal is disabled, and the first enable signal is disabled, when the second enable signal is enabled.
5. The control voltage generation circuit of claim 3 , wherein a disabling level of the second enable signal is a ground voltage level in the negative mode, and the disabling level of the second enable signal is a negative voltage level in the normal mode.
6. The control voltage generation circuit of claim 3 , wherein the transfer signal has a positive voltage level when the first enable signal is enabled, and the transfer signal has a ground voltage level when the output node is driven with the ground voltage level.
7. The control voltage generation circuit of claim 1 , wherein the high-voltage transistor is turned on when the first enable signal is enabled, and the high-voltage transistor is turned off when the second enable signal is enabled.
8. The control voltage generation circuit of claim 1 , wherein the enabling voltage driver comprises:
a high-voltage PMOS transistor, coupled to a positive voltage source, which is turned on/off in response to the first enable signal; and
an NMOS transistor, coupled between the high-voltage PMOS transistor and the output node, which is turned on/off in response to the control voltage.
9. The control voltage generation circuit of claim 1 , wherein the transferor comprises a first high-voltage NMOS transistor coupled between the input node and the output node and receives the transfer signal at its gate.
10. The control voltage generation circuit of claim 9 , wherein the disabling voltage driver drives the output node to a negative voltage level in the negative mode, and drives the output node to a ground voltage level in the normal mode.
11. The control voltage generation circuit of claim 1 , wherein the disabling voltage driver comprises:
a disabling voltage supply node which receives a disabling voltage; and
a second high-voltage NMOS transistor coupled between the output node and the disabling voltage supply node and configured to receive the second enable signal at its gate.
12. The control voltage generation circuit of claim 8 , further comprising:
a transfer signal generator configured to generate the transfer signal.
13. A non-volatile memory device, comprising:
a cell block having a plurality of cells;
a plurality of global lines;
a plurality of high-voltage transistors configured to transfer voltages of the global lines to a plurality of local lines inside the cell block;
an input node configured to receive a first enable signal applied when the cell block is selected;
an output node configured to generate a control voltage for controlling the high-voltage transistors;
a transferor configured to transfer a voltage of the input node to the output node in response to a transfer signal;
an enabling voltage driver configured to drive the output node with a high voltage when the first enable signal is enabled; and
a disabling voltage driver configured to drive the output node with a negative voltage when a second enable signal is enabled in a negative mode.
14. The non-volatile memory device of claim 13 , wherein, when the output node is driven with a negative voltage, the transfer signal has a negative voltage level.
15. The non-volatile memory device of claim 14 , wherein the disabling voltage driver drives the output node with a ground voltage when the second enable signal is enabled in a normal mode.
16. The non-volatile memory device of claim 15 , wherein the second enable signal is enabled when the cell block is not selected.
17. The non-volatile memory device of claim 15 , wherein a disabling level of the second enable signal is a ground voltage level in the negative mode, and the disabling level of the second enable signal is a negative voltage level in the normal mode.
18. The non-volatile memory device of claim 15 , wherein the transfer signal has a positive voltage level when the first enable signal is enabled, and the transfer signal has a ground voltage level when the output node is driven with the ground voltage level.
19. The non-volatile memory device of claim 13 , wherein the high-voltage transistors are turned on when the cell block is selected, and the high-voltage transistors are turned off when the cell block is not selected.