Prior to deposition of a silicon nitride (SiN) layer on a structure, a non-plasma enhanced operation is undertaken wherein the structure is exposed to silane (SiH 4 ) flow, reducing the overall exposure of the structure to hydrogen radicals. This results in the silicon nitride being strongly bonded to the structure and in improved performance.
1. A method of fabricating an electronic structure comprising:
forming at least one copper containing body;
performing a plasma treatment on the electronic structure to remove copper oxide layers from the at least one copper containing body;
performing a non-plasma treatment on the electronic structure to form copper silicide layers on the at least one copper containing body;
performing a plasma-enhanced deposition to deposit a silicon nitride layer on the electronic structure to contact the copper silicide layers.
2. The method of claim 1 , wherein performing a non-plasma treatment comprises exposing the electronic structure to a silicon-containing entity.
3. The method of claim 2 , wherein performing a non-plasma treatment comprises exposing the electronic structure to silane.
4. The method of claim 1 , wherein a first copper containing body is in electrical connection with a control gate of a transistor.
5. The method of claim 1 , wherein a second copper containing body is in electrical connection with a source of a transistor, and wherein a third copper containing body is in electrical connection with a drain of the transistor.
6. The method of claim 1 , wherein performing a plasma-enhanced deposition comprises exposing the electronic structure to silane and ammonia.
7. The method of claim 1 , wherein performing a plasma treatment on the electronic structure comprises exposing the electronic structure to ammonia at 100-1000 sccm, at a temperature of 300-500 degrees centigrade, at an RF power of 10-3000 watts, and at a pressure of 0.1-100 Torr, and wherein the plasma treatment is performed for 0.1-60 seconds.
8. The method of claim 7 , wherein performing a plasma treatment on the electronic structure comprises exposing the electronic structure to ammonia at 160 sccm, at a temperature of 400 degrees centigrade, at an RF power of 300 watts, and at a pressure of 4.2 Torr, and wherein the plasma treatment is performed for 10 seconds.
9. The method of claim 1 , wherein performing a non-plasma treatment on the electronic structure comprises exposing the electronic structure to silane at 10-1000 sccm, at a temperature of 300-500 degrees centigrade, and at a pressure of 0.1-100 Torr for 0.1-10 seconds.
10. The method of claim 9 , wherein performing a non-plasma treatment on the electronic structure comprises exposing the electronic structure to silane at 322 sccm, at a temperature of 400 degrees centigrade, and a pressure of 4.2 Torr for 1 second.
11. The method of claim 1 , wherein performing a plasma-enhanced deposition on the electronic structure comprises exposing the electronic structure to silane at 250-350 sccm, ammonia at 100-1000 sccm, and nitrogen at 10,000-30,000 sccm, at 300-500 degrees centigrade, at an RF power of 10-3000 watts, and at a pressure of 0.1-100 Torr.
12. The method of claim 11 , wherein performing a plasma-enhanced deposition on the electronic structure comprises exposing the electronic structure to silane at 250-350 sccm, ammonia at 320 sccm, and nitrogen at 22000 sccm, at 400 degrees centigrade, at an RF power of 830 watts, and at a pressure of 4.2 Torr.