Semiconductor device and method of controlling the same
An embodiment of the invention provides a semiconductor device that includes: a memory cell array that includes non-volatile memory cells; a first selecting circuit that connects or disconnects a source and a drain of a transistor that forms one of the memory cells, to or from a data line DATAB connected to a first power supply; and a second selecting circuit that connects or disconnects the source and drain to or from a ground line ARVSS connected to a second power supply. In this semiconductor device, the first selecting circuit and the second selecting circuit are arranged on the opposite sides of the memory cell array. One embodiment of the invention also provides a method of controlling the semiconductor device.
1. A semiconductor device comprising:
a memory cell array that includes non-volatile memory cells;
bit lines that are connected to sources and drains of transistors that form the memory cells;
a first region and a second region that are contained in the memory cell array, are physically separated from each other, and have different ones of the bit lines from each other; and
a control circuit that writes data alternately in the memory cells of the first region and in the memory cells of the second region.
2. The semiconductor device of claim 1 , wherein the control circuit precharges the bit line of one of the memory cells in which data is to be written next.
3. The semiconductor device of claim 1 , wherein the control circuit performs writing simultaneously in two or more of the memory cells contained in the first region or the second region.
4. The semiconductor device of claim 3 , further comprising:
word lines that are connected to gates of the transistors,
the two or more of the memory cells in which writing is simultaneously performed are connected to the same one of the word lines.
5. A method of controlling a semiconductor device that comprises: a memory cell array that comprises non-volatile memory cells; bit lines that are connected to sources and drains of transistors that form the memory cells; and a first region and a second region that are contained in the memory cell array, are physically separated from each other, and have different ones of the bit lines from each other,
the method comprising:
writing data in a first memory cell contained in the first region; and
writing data in a second memory cell contained in the second region;
the writing data in the first memory cell and the writing data in the second memory cell are alternately repeated.
6. The method of claim 5 , further comprising:
precharging the bit line of one of the memory cells in which data is to be written next.
7. The method of claim 5 , wherein the writing data in the first memory cell further comprises writing simultaneously in the first memory cell and another memory cell contained in the first region.
8. The method of claim 5 , wherein the non-volatile memory cells are virtual ground memory cells.
9. The method of claim 5 , wherein the semiconductor device is flash memory.
10. The method of claim 5 , wherein the semiconductor device is NOR flash memory.
11. The method of claim 5 , wherein the semiconductor device is NAND flash memory.
12. The semiconductor device of claim 1 , wherein the semiconductor device is flash memory.
13. The semiconductor device of claim 1 , wherein the semiconductor device is NOR flash memory.
14. The semiconductor device of claim 1 , wherein the semiconductor device is NAND flash memory.
15. A semiconductor device comprising:
a memory cell array that includes non-volatile memory cells;
bit lines that are connected to sources and drains of transistors that form the memory cells;
word lines that are connected to gates of the transistors;
a first region and a second region that are contained in the memory cell array, are physically separated from each other, and have different ones of the bit lines from each other; and
a control circuit that writes data alternately in the memory cells of the first region and in the memory cells of the second region.
16. The semiconductor device of claim 15 , wherein the control circuit precharges the bit line of one of the memory cells in which data is to be written next.
17. The semiconductor device of claim 15 , wherein the control circuit performs writing simultaneously in two or more of the memory cells contained in the first region.
18. The semiconductor device of claim 15 , wherein the non-volatile memory cells are virtual ground memory cells.
19. The semiconductor device of claim 15 , further comprising:
a selecting circuit coupled to the control circuit, the selecting circuit connects and disconnects the bit lines to and from a power supply.
20. The semiconductor device of claim 15 , further comprising:
a decoder coupled to the control circuit, the decoder is connected to the word lines.