METHODS FOR INCREASING BOTTOM ELECTRODE PERFORMANCE IN CARBON-BASED MEMORY DEVICES
In some aspects, a method of forming a reversible resistance-switching metal-insulator-metal (“MIM”) stack is provided, the method including: forming a first conducting layer comprising a titanium nitride material having between about 50% Ti and about 95% Ti, forming a carbon nano-tube (CNT) material above the first conducting layer, forming a second conducting layer above the CNT material, and etching the first conducting layer, CNT material and second conducting layer to form the MIM stack. Numerous other aspects are provided.
1 . A method of forming a reversible resistance-switching metal-insulator-metal (MIM) stack comprising:
forming a first conducting layer comprising a titanium nitride material having between about 50% Ti and about 95% Ti;
forming a carbon nano-tube (CNT) material above the first conducting layer;
forming a second conducting layer above the CNT material; and
etching the first conducting layer, CNT material and second conducting layer to form the MIM stack.
2 . The method of claim 1 , wherein the first conducting layer comprises a titanium nitride material having between about 55% Ti and 75% titanium.
3 . The method of claim 1 , wherein the first conducting layer has a thickness of about 10 to 2000 angstroms.
4 . The method of claim 1 , further comprising annealing the MIM stack to form titanium carbide contacts between the first conducting layer and the CNT material.
5 . The method of claim 4 , wherein the titanium carbide contacts comprises between about 1% C to about 60% C.
6 . The method of claim 4 , wherein the titanium carbide contacts comprises between about 10% C to about 50% C.
7 . A method of forming a carbon nano-tube (CNT) memory cell comprising:
forming a first conductor;
forming a steering element above the first conductor;
forming a first conducting layer above the first conductor, wherein the first conducting layer comprises a titanium nitride material having between about 50% Ti and about 95% Ti;
forming a CNT material above the first conducting layer;
forming a second conducting layer above the CNT material;
etching the first conducting layer, CNT material and second conducting layer to form a metal-insulator-metal (MIM) stack; and
forming a second conductor above the CNT material and the steering element.
8 . The method of claim 7 , wherein the first conducting layer comprises a titanium nitride material having between about 55% Ti and 75% Ti.
9 . The method of claim 7 , wherein the first conducting layer has a thickness of about 10 to 2000 angstroms.
10 . The method of claim 7 , further comprising annealing the MIM stack to form titanium carbide contacts between the first conducting layer and the CNT material.
11 . The method of claim 10 , wherein the titanium carbide contacts comprises between about 1% C to about 60% C.
12 . The method of claim 10 , wherein the titanium carbide contacts comprises between about 10% C to about 50% C.
13 . The method of claim 7 , wherein the steering element comprises a vertical polysilicon diode.
14 . The method of claim 7 , wherein the MIM stack and steering element are coupled in series.
15 . A memory cell formed by the method of claim 7 .
16 . A memory level formed by the method of claim 7 .
17 . A three-dimensional memory array formed by the method of claim 7 .
18 . A carbon nano-tube (CNT) memory cell comprising:
a first conductor;
a steering element above the first conductor;
a metal-insulator-metal (MIM) stack comprising:
a first conducting layer above the first conductor, wherein the first conducting layer comprises a titanium nitride material having between about 50% Ti and about 95% Ti;
a CNT material above the first conducting layer; and
a second conducting layer above the CNT material; and
a second conductor above the CNT material and the steering element.
19 . The memory cell of claim 19 , wherein the first conducting layer comprises a titanium nitride material having between about 55% Ti and 75% Ti.
20 . The memory cell of claim 19 , further comprising titanium carbide contacts between the first conducting layer and the CNT material.