IP Library Granted Patent US 8,868,820
Granted Patent B2
US 8,868,820 · App. 13/285,210 · Granted Oct 21, 2014

RAM block designed for efficient ganging

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 8,868,820
App. No.
13/285,210
Granted
Oct 21, 2014
Kind
B2
Abstract

A random-access memory block for a field programmable gate array includes a random-access memory array having address inputs, a data input, a data output and including a plurality of storage locations. At least two programmably invertible enable inputs are provided. Hardwired decoding logic is coupled to the at least two programmably invertible enable inputs to selectively enable the random-access memory array. A gate is coupled to the output of the random-access memory array and is configured to pass the output of the random-access memory array only if the random-access memory is enabled for a read operation, and otherwise generate a preselected logic state.

Claims (44)

1. In a field-programmable gate array, a random-access memory block comprising:

a random-access memory array having address inputs, a data input, a data output and including a plurality of storage locations;

at least two programmably invertible block-enable inputs;

hardwired decoding logic having inputs coupled to the at least two programmably invertible block-enable inputs to selectively enable the random-access memory array by generating a block-enable signal at an output in response to a preselected combination of data signals presented to the at least two programmably invertible block-enable inputs;

a gate having a first input coupled to the data output of the random-access memory array and a second input coupled to the output of the hardwired decoding logic and configured to pass the output of the random-access memory array only if the block-enable signal is present on the second input and if the random-access memory is enabled for a read operation, and otherwise generate a preselected logic state.

2. The random-access memory block of claim 1 , further including:

a multiplexer having a first data input coupled to the output of the gate, a second data input coupled to the output of the random-access memory array; and

a select input.

3. The random-access memory block of claim 2 wherein the select input of the multiplexer is coupled to a programmable bit.

4. The random-access memory block of claim 3 wherein the select input of the multiplexer is coupled to a mode control signal.

5. In a field-programmable gate array, a random-access memory block comprising:

a random-access memory array having address inputs, a data input, a data output and including a plurality of storage locations;

at least two programmably invertible enable inputs, each coupled to a different one of a plurality of memory address lines;

hardwired decoding logic coupled to the at least two programmably invertible enable inputs, the decoding logic having an output;

a block-enable register coupled to the output of the decoding logic;

a write enable register;

a data-input register coupled to the data input of the random-access memory array;

a memory address register having inputs coupled to an address bus and outputs coupled to the address inputs of the random-access memory array; and

a gate having a first input coupled to the output of the block-enable register, a second input coupled to the output of the write-enable register and a third input coupled to the output of the random-access memory array, and an output, the gate configured to pass to its output the output of the random-access memory array only if the contents of the block-enable register are true and the write-enable register indicates a read operation.

6. The random-access memory block of claim 5 wherein the decoding logic is an AND gate.

7. The random-access memory block of claim 5 wherein the gate is an OR gate.

8. The random-access memory block of claim 5 wherein the data output is coupled to an OR gate.

9. A method for operating a random-access memory block in a field-programmable gate array comprising:

enabling the random-access memory block only when it is uniquely selected by a block-enable signal, generated from decoding logic coupled to at least two programmably invertible block-enable inputs, and a read operation is requested by a read-enable signal separate from the block-enable signal; and

generating output data at an output of the random-access memory block when it is uniquely selected by the block-enable signal and a read operation is requested by the read-enable signal, otherwise generating a preselected logic state at the output of the random-access memory block.

10. The method of claim 9 wherein generating a preselected logic state at the output of the random-access memory block comprises generating a logic zero.

11. In a field-programmable gate array, a group of random-access memory blocks comprising:

a plurality of random-access memory blocks, each random-access memory block including:

a random-access memory array having address inputs, a data input, a data output and including a plurality of storage locations;

at least two programmably invertible block-enable inputs;

hardwired decoding logic having inputs coupled to the at least two programmably invertible block-enable inputs to selectively enable the random-access memory array by generating a block-enable signal at an output in response to a preselected combination of data signals presented to the at least two programmably invertible block-enable inputs;

a gate having a first input coupled to the data output of the random-access memory array and a second input coupled to the output of the hardwired decoding logic and configured to pass the output of the random-access memory array only if the block-enable signal is present on the second input and if the random-access memory is enabled for a read operation, and otherwise generate a preselected logic state;

a combining gate having a plurality of inputs and an output, each of the plurality of inputs coupled to the data output of a different one of the plurality of random-access memory blocks, the output of the gate forming an output of the group of random-access memory blocks.

12. In a field-programmable gate array, a random-access memory block comprising:

a random-access memory array having address inputs, a data input, a data output and including a plurality of storage locations;

at least one of a read-enable input and a write-enable input;

at least two programmably invertible block-enable inputs;

decoding logic coupled to the at least two programmably invertible block-enable inputs to selectively enable the random-access memory array block; and

wherein the output of the random-access memory array block is driven when the random-access memory block is enabled and when the random-access memory block is not enabled.

13. In a field-programmable gate array, a random-access memory block comprising:

a random-access memory array having address inputs, a data input, a data output and including a plurality of storage locations;

at least one of a read-enable input and a write-enable input;

at least one block-enable input;

a gate coupled to the output of the random-access memory array and configured to pass the output of the random-access memory array only if a block-enable signal from the block-enable input indicates that the random-access memory block has been selected and if the random-access memory array is enabled for a read operation, and otherwise generate a preselected logic state.

Assignments (6)
RELEASE OF SECURITY INTEREST Recorded May 29, 2018
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: MICROSEMI CORPORATION; MICROSEMI SEMICONDUCTOR (U.S.), INC.; MICROSEMI FREQUENCY AND TIME CORPORATION; MICROSEMI COMMUNICATIONS, INC.; MICROSEMI SOC CORP.; MICROSEMI CORP. - POWER PRODUCTS GROUP; MICROSEMI CORP. - RF INTEGRATED SOLUTIONS
Reel/Frame 046251/0391 →
PATENT SECURITY AGREEMENT Recorded Feb 3, 2016
From: MICROSEMI CORPORATION; MICROSEMI SEMICONDUCTOR (U.S.) INC. (F/K/A LEGERITY, INC., ZARLINK SEMICONDUCTOR (V.N.) INC., CENTELLAX, INC., AND ZARLINK SEMICONDUCTOR (U.S.) INC.); MICROSEMI FREQUENCY AND TIME CORPORATION (F/K/A SYMMETRICON, INC.); MICROSEMI COMMUNICATIONS, INC. (F/K/A VITESSE SEMICONDUCTOR CORPORATION); MICROSEMI SOC CORP. (F/K/A ACTEL CORPORATION); MICROSEMI CORP. - POWER PRODUCTS GROUP (F/K/A ADVANCED POWER TECHNOLOGY INC.); MICROSEMI CORP. - RF INTEGRATED SOLUTIONS (F/K/A AML COMMUNICATIONS, INC.)
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037691/0697 →
RELEASE OF SECURITY INTEREST Recorded Jan 19, 2016
From: BANK OF AMERICA, N.A.
To: MICROSEMI CORPORATION; MICROSEMI CORP.-ANALOG MIXED SIGNAL GROUP, A DELAWARE CORPORATION; MICROSEMI SOC CORP., A CALIFORNIA CORPORATION; MICROSEMI SEMICONDUCTOR (U.S.) INC., A DELAWARE CORPORATION; MICROSEMI FREQUENCY AND TIME CORPORATION, A DELAWARE CORPORATION; MICROSEMI COMMUNICATIONS, INC. (F/K/A VITESSE SEMICONDUCTOR CORPORATION), A DELAWARE CORPORATION; MICROSEMI CORP.-MEMORY AND STORAGE SOLUTIONS (F/K/A WHITE ELECTRONIC DESIGNS CORPORATION), AN INDIANA CORPORATION
Reel/Frame 037558/0711 →
SECURITY AGREEMENT Recorded Apr 22, 2015
From: MICROSEMI CORPORATION; MICROSEMI CORP.-ANALOG MIXED SIGNAL GROUP; MICROSEMI SEMICONDUCTOR (U.S.) INC.; MICROSEMI SOC CORP.; MICROSEMI FREQUENCY AND TIME CORPORATION
To: BANK OF AMERICA, N.A., AS COLLATERAL AGENT
Reel/Frame 035477/0057 →
CHANGE OF NAME Recorded Nov 13, 2013
From: ACTEL CORPORATION
To: MICROSEMI SOC CORPORATION
Reel/Frame 031592/0519 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 17, 2012
From: HECHT, VOLKER; GREENE, JONATHAN
To: ACTEL CORPORATION
Reel/Frame 027543/0461 →